Flood-gun device and method of neutralize charge on wafer

Abstract

Abstract PURPOSE: To attain neutralization of a charge formed on a target object like a semiconductor wafer applying irradiation by a beam, by guiding an outflow electron by current flux of high density and low electron energy into an ion beam also accurately controlling these characteristics and the other characteristic including a radiation angle. CONSTITUTION: By an electric field generated by a suppressed electrode E8, E9, and by a magnetic field generated by a magnet in a beam stopper 58, a radiation angle of an outflow electron is controlled, radiation of a secondary electron is suppressed. Rare gas from a line 66 flows in through a grid 64, a high pressure region 85 of rare gas is started to be generated in a flood gun. An electron of high energy radiated from a filament 63 collides against argon gas, to generate an energy loss by ionization also multiplication. The electron experiences also an energy loss by activation. As a result, with the grid last, a flow 76 of a low energy outflow electron, radiated through a peripheral low pressure region to be large amplified, is obtained, by this electric field, to be drawn into an ion beam.

Inventors

• 👤 Renau Antonii
• 👤 Mofuitsuto Suteiibun
• 👤 Puranbu Furederitsuku

Bibliographic Details