US5086016A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor device contact including transition metal-compound dopant source
Assignee: International Business Machines Corp
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Filing: 1990-10-31
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Granted: 1992-02-04
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Expires: 2010-10-31
Abstract
Abstract A contact is provided in a self-aligned manner to a doped region a semiconductor substrate by first forming a layer of a transition metal-boride compound over a selected region on the substrate. A layer of a transition metal-nitride compound is formed over the layer of transition metal-boride compound, and the structure is heated to drive dopant from the layer of transition metal-boride compound into the substrate. The transition metal-boride/transition metal nitride layers are patterned to leave a contact to the doped region.
Inventors
- 👤 Stephen B. Brodsky
- 👤 Rajiv V. Joshi
- 👤 John S. Lechaton
- 👤 James G. Ryan
- 👤 Dominic J. Schepis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D10/00; H10D10/01; H10D10/051; H10P; H10P14/00; H10P14/40; H10P14/418; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/034; Y10S148/035
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
93 words
A method of forming a self-aligned contact to a doped region on a semiconductor substrate, comprising the steps of: providing a substrate of semiconductor material; forming a first layer of a transition metal-boride compound over at least one selected portion of said substrate; forming a second layer of a transition metal-nitride compound over said first layer; heating to drive dopant from said first layer into said substrate; and removing portions of said first and second layers to leave overlying portions of said first and second layers as a contact to the doped region.
Claim 2
Independent Claim
93 words
A method of forming a self-aligned contact to a doped region on a semiconductor substrate, comprising the steps of: providing a substrate of semiconductor material; forming a first layer of a transition metal-boride compound over at least one selected portion of said substrate; forming a second layer of a transition metal-nitride compound over said first layer; heating to drive dopant from said first layer into said substrate; and removing portions of said first and second layers to leave overlying portions of said first and second layers as a contact to the doped region.
Claim 3
Dependent Claim
27 words
A method in accordance with claim 1 wherein said transition metals are selected from the metals in groups 3B, 4B, 5B, or 6B of the Periodic Table.
Claim 4
Dependent Claim
28 words
A method in accordance with claim 1 wherein said transition metals comprise titanium and said transition metal-boride comprises TiB 2 .x, with 0<x<10 wherein x is an integer.
Claim 5
Dependent Claim
49 words
A method in accordance with claim 1 wherein said first and second layers comprise an electrical contact to a base region of a NPN type transistor, the dopant diffused into said substrate from said first layer comprising at least a portion of the base region of said NPN transistor.
Claim 6
Dependent Claim
49 words
A method in accordance with claim 1 wherein said first and second layers comprise an electrical contact to an emitter region of a PNP type transistor, the dopant diffused into said substrate from said first layer comprising at least a portion of the emitter region of said PNP transistor.
References Cited (Backward Citations)
US4319932A
Cited
WO1982003948A1
Cited
US4483726A
Cited
US4526826A
Cited
US4586968A
Cited
US4490193A
Cited
US4481046A
Cited
US4920071A
Cited
US4734386A
Cited
US4884123A
Cited
US4800175A
Cited
US4976839A
Cited
US4920073A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-03 | 1995-08-05 | 1996-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-03 | 1999-08-05 | 2000-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-03 | 2003-08-05 | 2004-02-04 | $7700.00 | Window Closed / Lapsed |