US5084415A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallization processing
Assignee: Nokia Bell Labs
•
Filing: 1989-10-23
•
Granted: 1992-01-28
•
Expires: 2009-10-23
Abstract
Abstract When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to dielectrics such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer- such areas typically including the backside and the edge of the wafer, and clip marks on the face of the wafer. The invention prevents flaking by processing including: forming an adhesive or glue layer on the dielectric, forming a metal layer, forming a protective layer on metal on the glue layer, and etching to remove metal not covered by the protective layer.
Inventors
- 👤 Ajit S. Manocha
- 👤 Virendra V. S. Rana
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
86 words
In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a substrate comprising a semiconductor-device face, characterized by forming an adhesive layer on said dielectric, forming a metal layer in part on said adhesive layer and in part on said dielectric, forming a protective layer on portions of said metal layer on the adhesive layer, said protective layer does not cover a peripheral region of said face, and etching to remove metal not covered by the protective layer.
Claim 2
Dependent Claim
86 words
In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a substrate comprising a semiconductor-device face, characterized by forming an adhesive layer on said dielectric, forming a metal layer in part on said adhesive layer and in part on said dielectric, forming a protective layer on portions of said metal layer on the adhesive layer, said protective layer does not cover a peripheral region of said face, and etching to remove metal not covered by the protective layer.
Claim 3
Dependent Claim
12 words
The method of claim 1 in which said peripheral region is circumferential.
Claim 4
Dependent Claim
13 words
The method of claim 1 in which forming said peripheral region comprises rinsing.
Claim 5
Dependent Claim
13 words
The method of claim 1 in which forming said peripheral region comprises wiping.
Claim 6
Dependent Claim
12 words
The method of claim 1 in which etching is by wet etching.
Claim 7
Dependent Claim
11 words
The method of claim 1 in which said metal comprises tungsten.
Claim 8
Dependent Claim
11 words
The method of claim 1 in which said metal comprises copper.
Claim 9
Dependent Claim
11 words
The method of claim 1 in which said metal comprises aluminum.
Claim 10
Dependent Claim
12 words
The method of claim 1 in which said dielectric comprises silicon oxide.
Claim 11
Dependent Claim
12 words
The method of claim 9 in which said dielectric further comprises boron.
Claim 12
Dependent Claim
12 words
The method of claim 9 in which said dielectric further comprises phosphorus.
Claim 13
Dependent Claim
14 words
The method of claim 9 in which said dielectric further comprises boron and phosphorus.
Claim 14
Dependent Claim
12 words
The method of claim 1 in which said dielectric comprises silicon nitride.
Claim 15
Dependent Claim
12 words
The method of claim 1 in which said dielectric comprises silicon oxynitride.
Claim 16
Dependent Claim
51 words
The method of claim 1 in which said metal is selected from the group consisting of tungsten and copper, in which said dielectric comprises a silicon oxide, and in which said adhesive layer comprises a material selected from the group consisting of titanium, titanium nitride, titanium-tungsten, titanium-aluminum, titanium-vanadium, titanium-yttrium, and polysilicon.
Claim 17
Dependent Claim
14 words
The method of claim 1 in which said protective layer comprises a polymeric material.
Claim 18
Dependent Claim
14 words
The method of claim 16 in which said polymeric material is a photoresist material.
Claim 19
Dependent Claim
13 words
The method of claim 17 in which etching comprises exposure to photoresist developer.
Claim 20
Dependent Claim
15 words
The method of claim 1 in which said metal is deposited by chemical vapor deposition.
Claim 21
Dependent Claim
20 words
The method of claim 1, further comprising lithographic patterning of said protective layer and corresponding etching of said metal layer.
Claim 22
Dependent Claim
101 words
In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a wafer comprising a semiconductor-device face, characterized by forming an adhesive layer on the dielectric overlying semiconductor-device structures, forming a metal layer in part on said adhesive layer and in part on said dielectric, forming a protective layer on a position of said metal layer on the adhesive layer, and etching to remove metal from an area comprising the backside and the edge of said wafer, and clip marks on the face of said wafer, thereby preventing metal from flaking off said area.
Claim 23
Dependent Claim
101 words
In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a wafer comprising a semiconductor-device face, characterized by forming an adhesive layer on the dielectric overlying semiconductor-device structures, forming a metal layer in part on said adhesive layer and in part on said dielectric, forming a protective layer on a position of said metal layer on the adhesive layer, and etching to remove metal from an area comprising the backside and the edge of said wafer, and clip marks on the face of said wafer, thereby preventing metal from flaking off said area.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |