Patent US5082547A successfully refreshed from Google Patents.
US5082547A
Expired / Lapsed
US
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Plasma etching reactor
Assignee: PLASMA ETCH A CORP OF
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Filing: 1991-02-01
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Granted: 1992-01-21
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Expires: 2011-02-01
Abstract
Abstract An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly facing surface thereof with a conductive layer such as aluminum. This provides a more uniform plasma reaction. The chamber is of the type which has alternating charged and ground electrodes.
Inventors
- 👤 Gregory W. DeLarge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:58
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/0011; H05K3/0055; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32458; H01J37/32477; H01J2237/00; H01J2237/02; H01J2237/026; H01J2237/0262; H05K2203/00; H05K2203/09; H05K2203/095; Y; Y10; Y10S; Y10S156/00; Y10S156/914
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
101 words
A plasma etching reactor chamber comprising: a vacuum chamber including chamber walls with inner surfaces and a door which, when closed, forms an airtight chamber; a plurality of conductive electrode plates positioned in a parallel manner within said chamber, said plates alternating being charged plates and ground plates; and shield means on essentially all of the inner surfaces of said chamber walls, said shield means comprising a dielectric layer having an inwardly facing surface and an outwardly facing surface adjacent said inner surfaces of said chamber walls and a conductive layer affixed adjacent said inwardly facing surface of said dielectric layer.
Claim 2
Dependent Claim
101 words
A plasma etching reactor chamber comprising: a vacuum chamber including chamber walls with inner surfaces and a door which, when closed, forms an airtight chamber; a plurality of conductive electrode plates positioned in a parallel manner within said chamber, said plates alternating being charged plates and ground plates; and shield means on essentially all of the inner surfaces of said chamber walls, said shield means comprising a dielectric layer having an inwardly facing surface and an outwardly facing surface adjacent said inner surfaces of said chamber walls and a conductive layer affixed adjacent said inwardly facing surface of said dielectric layer.
Claim 3
Dependent Claim
16 words
The plasma etching reactor chamber of claim 1 wherein said conductive layer is an aluminum layer.
Claim 4
Dependent Claim
16 words
The plasma etching reactor chamber of claim 1 wherein said dielectric layer is a polytetrafluoroethane layer.
Claim 5
Dependent Claim
27 words
The plasma etching reactor chamber of claim 1 wherein said conductive layer and said dielectric layer are fixed in intimate contact with said walls by insulated screws.
Claim 6
Dependent Claim
19 words
The plasma etching reactor chamber of claim 1 wherein said conductive electrode plates are adapted to be externally heated.
Claim 7
Dependent Claim
75 words
An improved plasma etching reactor of the type which has a vacuum chamber with chamber walls having inner surfaces, said chamber further including a plurality of conductive plates wherein the improvement comprises: electrostatic shield means essentially completely covering and in intimate contact with the inner surfaces of the chamber walls, said electrostatic shield means comprising a dielectric layer adjacent the chamber walls and a conductive layer adjacent the inwardly facing surface of the dielectric layer.
Claim 8
Dependent Claim
75 words
An improved plasma etching reactor of the type which has a vacuum chamber with chamber walls having inner surfaces, said chamber further including a plurality of conductive plates wherein the improvement comprises: electrostatic shield means essentially completely covering and in intimate contact with the inner surfaces of the chamber walls, said electrostatic shield means comprising a dielectric layer adjacent the chamber walls and a conductive layer adjacent the inwardly facing surface of the dielectric layer.
Claim 9
Dependent Claim
13 words
The improved plasma chamber of claim 6 wherein said conducrive layer is aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |