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US5082542A
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Distributed-array magnetron-plasma processing module and method
Assignee: Texas Instruments Inc
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Filing: 1990-08-02
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Granted: 1992-01-21
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Expires: 2010-08-02
Abstract
Abstract A semiconductor wafer plasma processing magnetron module (12) for magnetron-plasma-enhanced processing of semiconductor wafers comprises a base (50) and distributed magnet array (52). The magnet array (52) comprises a plurality of associated magnet unit cells (54). Unit cells (54) associated for producing a periodic magnetic field at the semiconductor wafer (22). The magnetron (12), including the magnetic array (52), mounts to base (50). Unit cells (54) form a repetitive pattern across the surface of magnet array (52). Magnetron module (12) produces a magnetic field possessing periodic uniformity. Unit cells (54) associate to permit expansion of magnet array (52) for any wafer size. A preferred embodiment of the invention includes a hexagonal configuration of magnets (56) and (58) that form unit cells (54).
Inventors
- 👤 Mehrdad M. Moslehi
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:23
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/3266
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
66 words
A distributed-array magnetron-plasma processing module for plasma-assisted processing of a semiconductor wafer, comprising: a base mounted in parallel proximity to said wafer; and a magnetic array mounted to said base, said array comprising a plurality of unit cells formed in a repetitive pattern across said array, said unit cells comprising a plurality of uniformly spaced magnets associated to produce a distributed magnetic field at said wafer.
Claim 2
Dependent Claim
66 words
A distributed-array magnetron-plasma processing module for plasma-assisted processing of a semiconductor wafer, comprising: a base mounted in parallel proximity to said wafer; and a magnetic array mounted to said base, said array comprising a plurality of unit cells formed in a repetitive pattern across said array, said unit cells comprising a plurality of uniformly spaced magnets associated to produce a distributed magnetic field at said wafer.
Claim 3
Dependent Claim
13 words
The magnetron of claim 1, wherein said base comprises a magnetically conductive material.
Claim 4
Dependent Claim
23 words
The magnetron of claim 1, wherein said unit cells adjoin one another to form a periodic magnetic field at the semiconductor wafer surface.
Claim 5
Dependent Claim
18 words
The magnetron of claim 1, wherein a plurality of said unit cells comprise magnets having alternating relative sizes.
Claim 6
Dependent Claim
25 words
The magnetron of claim 1, wherein the polarity of the magnets of said plurality of said unit cells alternates for producing a uniform magnetic field.
Claim 7
Dependent Claim
24 words
The magnetron of claim 1, wherein a plurality of said unit cells comprise magnets having a uniform height for producing a uniform magnetic field.
Claim 8
Dependent Claim
14 words
The magnetron of claim 1, wherein said array produces a cylindrically uniform magnetic field.
Claim 9
Dependent Claim
14 words
The magnetron of claim 1, wherein said array produces a radially uniform magnetic field.
Claim 10
Dependent Claim
26 words
The magnetron of claim 1, wherein said array further comprises a plurality of said unit cells each having a relatively similar size and magnetic flux distribution.
Claim 11
Dependent Claim
33 words
The magnetron of claim 1, wherein said unit cells associate to permit expansion of said array by further addition of a plurality of said unit cells while providing a globally uniform magnetic field.
Claim 12
Dependent Claim
20 words
The magnetron of claim 1, wherein said array comprises a plurality of unit cells comprising a hexagonal configuration of magnets.
Claim 13
Dependent Claim
18 words
The magnetron of claim 1, wherein said array comprises a plurality of unit cells comprising a dot-matrix configuration.
Claim 14
Dependent Claim
19 words
The magnetron of claim 1, wherein said array comprises a plurality of unit cells comprising a concentric circle configuration.
Claim 15
Dependent Claim
19 words
The magnetron of claim 1, wherein said array comprises a plurality of unit cells comprising a distributed cylindrical configuration.
Claim 16
Dependent Claim
13 words
The magnetron of claim 1, wherein said magnets comprise a permanent magnetic material.
Claim 17
Dependent Claim
10 words
The magnetron of claim 1, wherein said magnets comprise electromagnets.
Claim 18
Dependent Claim
11 words
The magnetron of claim 1, wherein said magnets comprise ceramic magnets.
Claim 19
Dependent Claim
11 words
The magnetron of claim 1, wherein said magnets comprise rare-earth magnets.
Claim 20
Dependent Claim
11 words
The magnetron of claim 1, wherein said magnets comprise alnico magnets.
Claim 21
Independent Claim
84 words
A system for magnetron-plasma-enhanced processing of a semiconductor wafer, comprising: a semiconductor wafer processing reactor; and a semiconductor wafer plasma-assisted processing magnetron, said magnetron comprising: a base connected to said reactor in parallel spaced relation to said semiconductor wafer; and a magnetic array mounted to said base, said array comprising a plurality of unit cells formed in a repetitive pattern across said array, said unit cells comprising a plurality of magnets associated to produce a globally uniform magnetic field at the semiconductor wafer surface.
Claim 22
Independent Claim
84 words
A system for magnetron-plasma-enhanced processing of a semiconductor wafer, comprising: a semiconductor wafer processing reactor; and a semiconductor wafer plasma-assisted processing magnetron, said magnetron comprising: a base connected to said reactor in parallel spaced relation to said semiconductor wafer; and a magnetic array mounted to said base, said array comprising a plurality of unit cells formed in a repetitive pattern across said array, said unit cells comprising a plurality of magnets associated to produce a globally uniform magnetic field at the semiconductor wafer surface.
Claim 23
Dependent Claim
13 words
The system of claim 21, wherein said base comprises a magnetically conductive material.
Claim 24
Dependent Claim
23 words
The system of claim 20, wherein said unit cells adjoin one another to form a uniform magnetic field at the semiconductor wafer surface.
Claim 25
Dependent Claim
18 words
The system of claim 20, wherein a plurality of said unit cells comprise magnets having alternating relative sizes.
Claim 26
Dependent Claim
25 words
The system of claim 20, wherein the polarity of the magnets of said plurality of said unit cells alternates for producing a periodic magnetic field.
Claim 27
Dependent Claim
44 words
The system of claim 20, wherein said magnetic array further comprises a perimeter and a center, and wherein said plurality of said magnets are positioned on said perimeter an approximately equal distance from said center in order to provide a more uniform magnetic field.
Claim 28
Dependent Claim
24 words
The system of claim 20, wherein a plurality of said unit cells comprise magnets having a uniform height for producing a uniform magnetic field.
Claim 29
Dependent Claim
14 words
The system of claim 20, wherein said array produces a cylindrically uniform magnetic field.
Claim 30
Dependent Claim
14 words
The system of claim 20, wherein said array produces a radially uniform magnetic field.
Claim 31
Dependent Claim
26 words
The system of claim 20, wherein said array further comprises a plurality of said unit cells each having a relatively similar size and magnetic flux distribution.
Claim 32
Dependent Claim
32 words
The system of claim 20, wherein said unit cells associate to permit expansion of said array by further addition of a plurality of said unit cells while providing a uniform magnetic field.
Claim 33
Dependent Claim
20 words
The system of claim 20, wherein said array comprises a plurality of unit cells comprising a hexagonal configuration of magnets.
Claim 34
Dependent Claim
18 words
The system of claim 20, wherein said array comprises a plurality of unit cells comprising a rectangular configuration.
Claim 35
Dependent Claim
19 words
The system of claim 20, wherein said array comprises a plurality of unit cells comprising a concentric cylindrical configuration.
Claim 36
Dependent Claim
19 words
The system of claim 20, wherein said array comprises a plurality of unit cells comprising a distributed cylindrical configuration.
Claim 37
Dependent Claim
14 words
The system of claim 20, wherein said unit cells comprise a single magnet configuration.
Claim 38
Dependent Claim
13 words
The system of claim 20, wherein said magnets comprise a permanent magnetic material.
Claim 39
Dependent Claim
10 words
The system of claim 20, wherein said magnets comprise electromagnets.
Claim 40
Dependent Claim
11 words
The system of claim 20, wherein said magnets comprise ceramic magnets.
Claim 41
Dependent Claim
11 words
The system of claim 20, wherein said magnets comprise rare-earth magnets.
Claim 42
Dependent Claim
11 words
The system of claim 20 wherein said magnets comprise alnico magnets.
Claim 43
Independent Claim
59 words
A method of magnetron-plasma enhanced processing of a semiconductor wafer, comprising the steps of: associating a plurality of magnets to form a unit cell; associating a plurality of said unit cells in a repetitive pattern to form a magnet array that produces a periodic magnetic field; and directing said periodic magnetic field perpendicularly toward the surface of the wafer.
Claim 44
Independent Claim
59 words
A method of magnetron-plasma enhanced processing of a semiconductor wafer, comprising the steps of: associating a plurality of magnets to form a unit cell; associating a plurality of said unit cells in a repetitive pattern to form a magnet array that produces a periodic magnetic field; and directing said periodic magnetic field perpendicularly toward the surface of the wafer.
Claim 45
Dependent Claim
28 words
The method of claim 41, further comprising the step of associating said unit cells to adjoin one another to form a uniform magnetic field at the semiconductor surface.
Claim 46
Dependent Claim
28 words
The method of claim 41, further comprising the step of alternating the polarity of the magnets of said plurality of unit cells for producing a uniform magnetic field.
Claim 47
Dependent Claim
32 words
The method of claim 41, further comprising the step of associating said unit cells in a uniformly repetitive pattern across said magnet array to produce a cylindrically uniform magnetic field and process.
Claim 48
Dependent Claim
32 words
The method of claim 41, further comprising the step of associating said unit cells in a uniformly repetitive pattern across said magnet array to produce a radially uniform magnetic field and process.
Claim 49
Dependent Claim
45 words
The method of claim 41, further comprising the step of associating said unit cells in a uniformly repetitive pattern across said magnet array to permit expansion of said array by further addition of a plurality of said unit cells while providing a periodic magnetic field.
Claim 50
Dependent Claim
22 words
The method of claim 41, further comprising the step of associating said magnets of said unit cells to form a hexagonal configuration.
Claim 51
Dependent Claim
22 words
The method of claim 41, further comprising the step of associating said magnets within said unit cells to form a rectangular configuration.
Claim 52
Dependent Claim
23 words
The method of claim 41, further comprising the step of associating said magnets with said unit cells to form a concentric cylindrical configuration.
Claim 53
Dependent Claim
23 words
The method of claim 41, further comprising the step of associating said magnets within said unit cells to form a distributed cylindrical configuration.
Claim 54
Dependent Claim
18 words
The method of claim 41, further comprising the step of forming said magnets from a permanent magnetic material.
Claim 55
Dependent Claim
15 words
The method of claim 41, further comprising the step of forming said magnets from electromagnets.
Claim 56
Dependent Claim
16 words
The method of claim 37, further comprising the step of forming said magnets from ceramic magnets.
Claim 57
Dependent Claim
16 words
The method of claim 41 further comprising the step of forming said magnets from rare-earth magnets.
Claim 58
Dependent Claim
16 words
The method of claim 41 further comprising the step of forming said magnets from alnico magnets.
Claim 59
Dependent Claim
69 words
A magnetron for use with a semiconductor wafer fabrication process for increasing the ion density in the proximity of a surface of said semiconductor wafer, said magnetron comprising: means for producing a plurality of individual magnetic fields repetitively and uniformly spaced apart; and means for producing a circumferential boundary set of individual magnetic fields arranged uniformly around said plurality of individual magnetic fields to create a uniform magnetic boundary.
Claim 60
Dependent Claim
69 words
A magnetron for use with a semiconductor wafer fabrication process for increasing the ion density in the proximity of a surface of said semiconductor wafer, said magnetron comprising: means for producing a plurality of individual magnetic fields repetitively and uniformly spaced apart; and means for producing a circumferential boundary set of individual magnetic fields arranged uniformly around said plurality of individual magnetic fields to create a uniform magnetic boundary.
Claim 61
Dependent Claim
31 words
The magnetron as claim 56, wherein said magnetic fields comprise a plurality of poles in at least two parallel planes, and further comprising a magnetic conductive layer interposed between said planes.
Claim 62
Dependent Claim
33 words
The magnetron as claim 57, wherein said means for producing magnetic fields is operable to produce magnetic fields of each of said planes having opposite magnetic orientations with respect to said conductive layer.
Claim 63
Dependent Claim
37 words
The magnetron of claim 58, wherein said magnetic fields include a plurality of individual magnets having a parallelepiped shape and wherein the longitudinal axis of said magnets is perpendicular to said conductive layer and to said semiconductor.
Claim 64
Dependent Claim
18 words
The magnetron of claim 59, wherein said parallel planes are dispersed along said longitudinal axis of said magnets.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |