Patent US5082522A successfully refreshed from Google Patents.
US5082522A
Expired / Lapsed
US
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Method for forming patterned diamond thin films
Assignee: Texas Instruments Inc
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Filing: 1990-08-14
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Granted: 1992-01-21
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Expires: 2010-08-14
Abstract
Abstract Preferred embodiments mask select regions of a circuit surface (141) prior to abrading the surface with diamond particles to form nucleation sites (200). The mask (150) is then removed prior to forming a diamond layer (160). Diamond layer (160) grows on the surface except in those regions wherein the mask (150) prevented the formation of nucleation sites (200).
Inventors
- 👤 Andrew J. Purdes
- 👤 Francis G. Celii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/02; C30B29/04; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10W20/01; H10W20/071; H10P14/60; H10P14/69; H10P14/6902
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
57 words
A method of forming a patterned diamond film on a body, comprising the steps of: (a) forming a masking layer on a portion of said body; (b) forming nucleation sites only on select regions of said body; (c) then removing said masking layer; and (d) then forming a diamond film on said select regions of said body.
Claim 2
Independent Claim
57 words
A method of forming a patterned diamond film on a body, comprising the steps of: (a) forming a masking layer on a portion of said body; (b) forming nucleation sites only on select regions of said body; (c) then removing said masking layer; and (d) then forming a diamond film on said select regions of said body.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein: (a) said forming of nucleation sites on select regions is accomplished by abrading said select regions with diamond particles.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein: (a) said forming of said diamond film is by microwave decomposition of carbon-bearing material plus hydrogen.
Claim 5
Independent Claim
72 words
A method of forming a patterned diamond film on a body, comprising the steps of: (a) forming a masking layer on said body; said masking layer leaving select regions of said body exposed; (b) forming nucleation sites by abrading said masking layer and said select regions of said body with diamond grit; (c) removing said abraded masking layer; and (d) then forming a diamond film on said select regions of said body.
Claim 6
Independent Claim
72 words
A method of forming a patterned diamond film on a body, comprising the steps of: (a) forming a masking layer on said body; said masking layer leaving select regions of said body exposed; (b) forming nucleation sites by abrading said masking layer and said select regions of said body with diamond grit; (c) removing said abraded masking layer; and (d) then forming a diamond film on said select regions of said body.
Claim 7
Dependent Claim
21 words
The method of claim 4, wherein: (a) said forming a masking layer is by photolithographic development of an organic photomask layer.
Claim 8
Dependent Claim
22 words
The method of claim 4, wherein: (a) said forming of said diamond film is by microwave decomposition of carbon-bearing material and hydrogen.
Claim 9
Independent Claim
114 words
A method of forming a patterned diamond film, comprising the steps of: (a) forming a first layer of diamond on a semiconductor body; (b) forming a first layer of conducting material on said first layer of diamond; (c) forming a masking layer on said first layer of conducting material; said masking layer leaving select regions of said first layer of conducting material exposed; (d) abrading said select regions of said first layer of said conducting material and said masking layer with diamond grit; (e) removing said masking layer; (f) forming a second layer of diamond on said select regions; and (g) forming a second layer of conducting material on said second layer of diamond.
Claim 10
Independent Claim
114 words
A method of forming a patterned diamond film, comprising the steps of: (a) forming a first layer of diamond on a semiconductor body; (b) forming a first layer of conducting material on said first layer of diamond; (c) forming a masking layer on said first layer of conducting material; said masking layer leaving select regions of said first layer of conducting material exposed; (d) abrading said select regions of said first layer of said conducting material and said masking layer with diamond grit; (e) removing said masking layer; (f) forming a second layer of diamond on said select regions; and (g) forming a second layer of conducting material on said second layer of diamond.
Claim 11
Dependent Claim
15 words
The method of claim 7, wherein: (a) said conducting material is formed of substantially copper.
Claim 12
Dependent Claim
15 words
The method of claim 7, wherein: (a) said masking layer is an organic photomask material.
Claim 13
Dependent Claim
18 words
The method of claim 7, wherein: (a) said masking layers comprises an organic photomask material and silicon dioxide.
Claim 14
Dependent Claim
25 words
The method of claim 7, wherein: (a) said select regions constitute the majority of the surface area of said first layer of said second material.
Claim 15
Dependent Claim
21 words
The method of claim 1, wherein: (a) said forming a masking layer is by photolithographic development of an organic photomask layer.
Claim 16
Dependent Claim
17 words
The method of claim 1, wherein: (a) said body comprises a silicon substrate under a diamond layer.
Claim 17
Dependent Claim
11 words
The method of claim 13, wherein: (a) said substrate is metal.
Claim 18
Dependent Claim
23 words
The method of claim 1, wherein: (a) a pre-masking layer is formed on a portion of said body before forming said masking layer.
Claim 19
Dependent Claim
13 words
The method of claim 15, wherein: (a) said pre-masking layer is silicon dioxide.
Claim 20
Dependent Claim
17 words
The method of claim 4, wherein: (a) said body comprises a silicon substrate under a diamond layer.
Claim 21
Dependent Claim
11 words
The method of claim 17, wherein: (a) said substrate is metal.
Claim 22
Dependent Claim
23 words
The method of claim 4, wherein: (a) a pre-masking layer is formed on a portion of said body before forming said masking layer.
Claim 23
Dependent Claim
13 words
The method of claim 19, wherein: (a) said pre-masking layer is silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |