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US5079774A
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Polarization-tunable optoelectronic devices
Assignee: International Business Machines Corp
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Filing: 1990-12-27
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Granted: 1992-01-07
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Expires: 2010-12-27
Abstract
Abstract A strained-layer quantum well (QW) or multi-quantum well (MQW) semiconductor laser device (10) having a polarization that is switchable between the TE and the TM modes by an electric field that is externally applied, via an electrode (22) perpendicularly to the layer (16) or layers of the quantum well. The polarization switching is a direct consequence of a valence-band reversal induced by the electric field in the strained-layer quantum well. An inversion population is maintained during the switching process, resulting in rapid switching times.
Inventors
- 👤 Emilio E. Mendez
- 👤 Doyeol Ahn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H01S5/20; H01S5/30; H01S5/34; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/0424; H01S5/06233; H01S5/06236; H01S5/2054; H01S5/2059; H01S5/22; H01S5/227; H01S5/2275; H01S5/3403; H01S5/3404
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
110 words
A semiconductor optoelectronic device comprising: a quantum well region comprised of a first semiconductor material and a second semiconductor material, the second semiconductor material having a lattice constant that differs from a lattice constant of the first semiconductor material by an amount sufficient to strain the quantum well region such that electromagnetic radiation generated within the quantum well region has a TM polarization; and means for impressing an electric field across the quantum well region, the electric field having a magnitude above a threshold magnitude such that electromagnetic radiation generated within the quantum well region has, during a time that the electric field is impressed there across, a TE polarization.
Claim 2
Dependent Claim
110 words
A semiconductor optoelectronic device comprising: a quantum well region comprised of a first semiconductor material and a second semiconductor material, the second semiconductor material having a lattice constant that differs from a lattice constant of the first semiconductor material by an amount sufficient to strain the quantum well region such that electromagnetic radiation generated within the quantum well region has a TM polarization; and means for impressing an electric field across the quantum well region, the electric field having a magnitude above a threshold magnitude such that electromagnetic radiation generated within the quantum well region has, during a time that the electric field is impressed there across, a TE polarization.
Claim 3
Dependent Claim
29 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material is comprised of AlAsSb and wherein the second semiconductor material is comprised of GaAs.
Claim 4
Dependent Claim
35 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material is comprised of AlAs 1-x Sb x , where x≳0.02, and wherein the second semiconductor material is comprised of GaAs.
Claim 5
Dependent Claim
29 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material is comprised of GaAlSb and wherein the second semiconductor material is comprised of GaSb.
Claim 6
Dependent Claim
35 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material is comprised of Ga 1-x Al x Sb, where x≳0.06, and wherein the second semiconductor material is comprised of GaSb.
Claim 7
Dependent Claim
29 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material is comprised of GaInAs and wherein the second semiconductor material is comprised of InP.
Claim 8
Dependent Claim
36 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material is comprised of Ga x In 1-x As, where 0.9≳x ≳0.55, and wherein the second semiconductor material is comprised of InP.
Claim 9
Dependent Claim
36 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the difference between the lattice constant of the first semiconductor material and the lattice constant of the second semiconductor material is at least approximately 0.3%.
Claim 10
Dependent Claim
21 words
A semiconductor optoelectronic device as set forth in claim 1 and further including a substrate that underlies the quantum well region.
Claim 11
Dependent Claim
20 words
A semiconductor optoelectronic device as set forth in claim 9 wherein the substrate is comprised of GaAs or of InP.
Claim 12
Dependent Claim
35 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the first semiconductor material has a thickness of approximately one micrometer and wherein the second semiconductor material has a thickness of approximately 100 Angstroms.
Claim 13
Dependent Claim
26 words
A semiconductor optoelectronic device as set forth in claim 1 and further comprising a p-n junction disposed for injecting charge carriers into the quantum well region.
Claim 14
Dependent Claim
40 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the impressing means is comprised of an electrode means disposed for impressing the electric field in a perpendicular manner to a plane or planes of the quantum well region.
Claim 15
Dependent Claim
40 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the impressing means is comprised of a p-n junction disposed for impressing the electric field in a perpendicular manner to a plane or planes of the quantum well region.
Claim 16
Dependent Claim
48 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the quantum well region is comprised of a plurality of layers of the second semiconductor material, and wherein individual ones of a pair of the layers have a layer comprised of the first semiconductor material interposed therebetween.
Claim 17
Dependent Claim
53 words
A semiconductor optoelectronic device as set forth in claim 1 wherein the threshold magnitude is sufficient to cause, within the quantum well region, a heavy-hole band to have a higher energy than a light-hole band for switching the polarization of the electromagnetic radiation from the TM polarization mode to the TE polarization mode.
Claim 18
Dependent Claim
127 words
A semiconductor laser comprising: a substrate; a first semiconductor material disposed above a surface of the substrate; a quantum well region formed adjacent to the first semiconductor material, the quantum well region being comprised of at least one layer of a second semiconductor material that has a lattice constant that differs from a lattice constant of the first semiconductor material by an amount sufficient to compressively strain the quantum well region such that electromagnetic radiation generated within the quantum well region has a TM polarization; and means for impressing an electric field perpendicularly across the at least one layer of the quantum well region, the electric field having a magnitude sufficient for switching the polarization of the electromagnetic radiation from the TM polarization to a TE polarization.
Claim 19
Dependent Claim
127 words
A semiconductor laser comprising: a substrate; a first semiconductor material disposed above a surface of the substrate; a quantum well region formed adjacent to the first semiconductor material, the quantum well region being comprised of at least one layer of a second semiconductor material that has a lattice constant that differs from a lattice constant of the first semiconductor material by an amount sufficient to compressively strain the quantum well region such that electromagnetic radiation generated within the quantum well region has a TM polarization; and means for impressing an electric field perpendicularly across the at least one layer of the quantum well region, the electric field having a magnitude sufficient for switching the polarization of the electromagnetic radiation from the TM polarization to a TE polarization.
Claim 20
Dependent Claim
28 words
A semiconductor laser as set forth in claim 17 wherein the first semiconductor material is comprised of AlAsSb, and wherein the second semiconductor material is comprised of GaAs.
Claim 21
Dependent Claim
28 words
A semiconductor laser as set forth in claim 17 wherein the first semiconductor material is comprised of GaAlSb and wherein the second semiconductor material is comprised of GaSb.
Claim 22
Dependent Claim
28 words
A semiconductor laser as set forth in claim 17 wherein the first semiconductor material is comprised of InP and wherein the second semiconductor material is comprised of GaInAs.
Claim 23
Dependent Claim
33 words
A semiconductor laser as set forth in claim 17 wherein the lattice constant of the first semiconductor material differs from the lattice constant of the second semiconductor material by at least approximately 0.3%.
Claim 24
Dependent Claim
31 words
A semiconductor laser as set forth in claim 17 and further comprising a p-n junction disposed for injecting charge carriers laterally into the layer or layers of the quantum well region.
Claim 25
Dependent Claim
35 words
A semiconductor laser as set forth in claim 17 wherein the impressing means is comprised of an electrode disposed for impressing the electric field perpendicularly across the layer or layers of the quantum well region.
Claim 26
Dependent Claim
36 words
A semiconductor laser as set forth in claim 17 wherein the impressing means is comprised of a p-n junction disposed for impressing the electric field perpendicularly across the layer or layers of the quantum well region.
Claim 27
Dependent Claim
58 words
A semiconductor laser as set forth in claim 17 wherein the quantum well region is comprised of a plurality of layers including layers comprised of the first semiconductor material and layers comprised of the second semiconductor material, wherein the second semiconductor material is selected from the group consisting of GaAs, GaSb, and Ga x In 1-x As (0.9≳x≳0.55).
Claim 28
Dependent Claim
62 words
A semiconductor laser as set forth in claim 17 wherein the quantum well region is comprised of a plurality of layers including layers comprised of the first semiconductor material and layers comprised of the second semiconductor material, wherein the first semiconductor material is selected from the group consisting of AlAs 1-x Sb x (x ≳0.02), Ga 1-x Sb, where x≳0.6, and InP.
Claim 29
Independent Claim
98 words
A method of operating a semiconductor laser comprising the steps of: providing a semiconductor laser having one or more quantum wells, the one or more quantum wells having a uniaxial compressive stress applied thereto, a magnitude of the compressive stress being in excess of a critical value (S c ); operating the semiconductor laser to generate electromagnetic radiation having a TM polarization; and applying an electric field perpendicularly to the one or more quantum wells, the electric field having a magnitude above a threshold magnitude for causing the semiconductor laser to generate electromagnetic radiation having a TE polarization.
Claim 30
Independent Claim
98 words
A method of operating a semiconductor laser comprising the steps of: providing a semiconductor laser having one or more quantum wells, the one or more quantum wells having a uniaxial compressive stress applied thereto, a magnitude of the compressive stress being in excess of a critical value (S c ); operating the semiconductor laser to generate electromagnetic radiation having a TM polarization; and applying an electric field perpendicularly to the one or more quantum wells, the electric field having a magnitude above a threshold magnitude for causing the semiconductor laser to generate electromagnetic radiation having a TE polarization.
References Cited (Backward Citations)
US3301625A
Cited
US4207122A
Cited
US4430740A
Cited
US4509173A
Cited
US4549300A
Cited
US4498179A
Cited
US4546480A
Cited
US4644553A
Cited
US4612645A
Cited
US4685108A
Cited
US5012474A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |