US4612645A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fast polarization-switchable semiconductor lasers
Assignee: Verizon Laboratories Inc
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Filing: 1984-12-19
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Granted: 1986-09-16
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Expires: 2004-12-19
Abstract
Abstract The laser device of the present invention comprises: a semiconductor substrate; a first cladding layer of semiconductor formed on the substrate; an active layer of semiconductor formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of semiconductor formed on the active layer and a cap layer of semiconductor formed on the second cladding layer; the active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the normally operating TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode. The laser output of the laser device of the present invention can be switched between a pure TM mode and a pure TE mode with nanosecond response time by varying injection current levels of the device.
Inventors
- 👤 Jia-Ming Liu
- 👤 Ying-Chih Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:45
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06209; H01S5/30; H01S5/32; H01S5/06233; H01S5/06236; H01S5/3201; H01S5/323; H01S5/3235; H01S5/32391
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
175 words
A polarization-switchable semiconductor laser device in which the output of the semiconductor laser device can be switched between a pure TE mode and a pure TM mode by varying laser injection current levels, said device comprising: a semiconductor substrate; a first cladding layer of semiconductor formed on the substrate; an active layer of semiconductor formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of semiconductor formed on the active layer; and a cap layer of semiconductor formed on the second cladding layer; said active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant of the active layer normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode.
Claim 2
Dependent Claim
175 words
A polarization-switchable semiconductor laser device in which the output of the semiconductor laser device can be switched between a pure TE mode and a pure TM mode by varying laser injection current levels, said device comprising: a semiconductor substrate; a first cladding layer of semiconductor formed on the substrate; an active layer of semiconductor formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of semiconductor formed on the active layer; and a cap layer of semiconductor formed on the second cladding layer; said active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant of the active layer normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode.
Claim 3
Dependent Claim
67 words
A polarization-switchable semiconductor laser device in accordance with claim 1 wherein the substrate consists of n-InP; the first cladding layer consists of n-InP; the active layer consists of In 1-x Ga x As y P 1-y wherein 0<x<1, 0<y<1 and x=0.47y, and the second cladding layer consists of p-InP, and the cap layer consists of In 1-u Ga u As v P 1-v wherein 0<v≦1 and u=0.47v.
Claim 4
Dependent Claim
208 words
A polarization-switchable semiconductor laser device whereby the output of the semiconductor laser device can be switched between a pure TE mode and a pure TM mode by varying laser injection current levels, said device comprising: a substrate consisting of GaAs; a buffer layer of Al z Ga 1-z As formed on the substrate; a first cladding layer of Al x Ga 1-x As formed on the buffer layer; an active layer of Al y Ga 1-y As formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of Al x Ga 1-x As formed on the active layer; and a cap layer of GaAs formed on the second cladding layer; wherein 0<y<0.2; y<x; and y<z; and said active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant of the active layer normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode.
Claim 5
Dependent Claim
208 words
A polarization-switchable semiconductor laser device whereby the output of the semiconductor laser device can be switched between a pure TE mode and a pure TM mode by varying laser injection current levels, said device comprising: a substrate consisting of GaAs; a buffer layer of Al z Ga 1-z As formed on the substrate; a first cladding layer of Al x Ga 1-x As formed on the buffer layer; an active layer of Al y Ga 1-y As formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of Al x Ga 1-x As formed on the active layer; and a cap layer of GaAs formed on the second cladding layer; wherein 0<y<0.2; y<x; and y<z; and said active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant of the active layer normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-15 | 1990-03-17 | 1990-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-15 | 1994-03-17 | 1994-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-15 | 1998-03-17 | 1998-09-16 | $7700.00 | Window Closed / Lapsed |