US5079744A
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Test apparatus for static-type semiconductor memory devices
Assignee: Mitsubishi Electric Corp
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Filing: 1990-07-03
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Granted: 1992-01-07
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Expires: 2010-07-03
Abstract
Abstract A static type semiconductor memory device is provided with a power circuit for a disturb test, in which MOS transistors constituting a memory cell are examined for an abnormal threshold voltage. A P-channel MOS transistor is provided between a power supply, and the memory cells. The P-channel MOS transistor is rendered conductive in the normal mode, allowing the voltage to the memory cells as under normal circumstances. In addition, between the power supply and the memory cells, there is provided a series-connection of a diode-connected N-channel MOS transistor and a P-channel MOS transistor. In the disturb test, this P-channel MOS transistor is rendered conductive. As a result, the supply voltage reduced by the N-channel MOS transistor, or a voltage lower than the supply voltage by the threshold voltage of this N-channel MOS transistor is supplied to the memory cells. By configuring the static type semiconductor memory device in this manner, the time required for the potential difference between the two storage nodes in a memory cell to become small enough, due to a defective transistor in the memory cell, to cause malfunction of the device is reduced. Thus, the time required for the disturb test is shortened.
Inventors
- 👤 Youichi Tobita
- 👤 Yuji Kihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:53
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G11C29/50004; G06; G06F; G06F2201/00; G06F2201/81; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
131 words
A static type semiconductor memory device, comprising: a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop; designating means for outputting a first signal representing a normal operating mode of said semiconductor memory device and outputting a second representing a test operating mode of said semiconductor memory device; and first and second drive voltage generating means connected to said plurality of memory cells for generating first and second drive voltages to drive said plurality of memory cells, said first drive voltage generating means responsive to said first signal and said second drive voltage generating means responsive to said second signal wherein said first drive voltage generating means is deactivated when said second drive voltage generating means is generating said second drive voltage.
Claim 2
Dependent Claim
131 words
A static type semiconductor memory device, comprising: a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop; designating means for outputting a first signal representing a normal operating mode of said semiconductor memory device and outputting a second representing a test operating mode of said semiconductor memory device; and first and second drive voltage generating means connected to said plurality of memory cells for generating first and second drive voltages to drive said plurality of memory cells, said first drive voltage generating means responsive to said first signal and said second drive voltage generating means responsive to said second signal wherein said first drive voltage generating means is deactivated when said second drive voltage generating means is generating said second drive voltage.
Claim 3
Dependent Claim
22 words
The static type semiconductor memory device according to claim 1, wherein said second drive voltage is lower than said first drive voltage.
Claim 4
Dependent Claim
233 words
A static type semiconductor memory device, comprising: a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop; designating means for outputting a first signal representing a normal operating mode of said semiconductor memory device and outputting a second signal representing a test operating mode of said semiconductor memory device; and drive voltage generating means connected to said plurality of memory cells and responsive to said first and second output signals for generating first and second drive voltages to drive said plurality of memory cells, said drive voltage generating means comprising a first drive voltage generating means provided between a voltage source which supplies a relatively high voltage and said plurality of memory cells, said first drive voltage generating means being responsive to the first signal from said designating means to generate said first drive voltage and apply the same to said plurality of memory cells; and a second drive voltage generating means provided between said voltage source and said plurality of memory cells, said second drive voltage generating means being responsive to the second signal from said designating means to generate said second drive voltage and apply the same to said plurality of memory cells; wherein said second drive voltage has a lower value than said first drive voltage; and said designating means designate the normal operating mode and only one test operating mode.
Claim 5
Dependent Claim
233 words
A static type semiconductor memory device, comprising: a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop; designating means for outputting a first signal representing a normal operating mode of said semiconductor memory device and outputting a second signal representing a test operating mode of said semiconductor memory device; and drive voltage generating means connected to said plurality of memory cells and responsive to said first and second output signals for generating first and second drive voltages to drive said plurality of memory cells, said drive voltage generating means comprising a first drive voltage generating means provided between a voltage source which supplies a relatively high voltage and said plurality of memory cells, said first drive voltage generating means being responsive to the first signal from said designating means to generate said first drive voltage and apply the same to said plurality of memory cells; and a second drive voltage generating means provided between said voltage source and said plurality of memory cells, said second drive voltage generating means being responsive to the second signal from said designating means to generate said second drive voltage and apply the same to said plurality of memory cells; wherein said second drive voltage has a lower value than said first drive voltage; and said designating means designate the normal operating mode and only one test operating mode.
Claim 6
Dependent Claim
58 words
The static type semiconductor memory device according to claim 3, wherein said first drive voltage generating means comprises a first P-channel field effect semiconductor device having a first conduction terminal connected to said voltage source, a second conduction terminal connected to said plurality of memory cells, and a control terminal receiving the first signal from said designating means.
Claim 7
Dependent Claim
95 words
The static type semiconductor memory device according to claim 3, wherein said second drive voltage generating means comprises: an N-channel field effect semiconductor device having a first conduction terminal connected to said voltage source, a control terminal receiving a predetermined voltage, and a second conduction terminal; and a second P-type field effect semiconductor device having a first conduction terminal connected to said second conduction terminal of said N-channel field effect semiconductor device, a second conduction terminal connected to said plurality of memory cells, and a control terminal receiving the second signal from said designating means.
Claim 8
Dependent Claim
43 words
The static type semiconductor memory device according to claim 3, wherein the first signal and the second signal applied to the control terminals of said first and second P-channel field effect semiconductor devices, respectively, are complementary to each other in their logic level.
Claim 9
Dependent Claim
24 words
The static type semiconductor memory device according to claim 3, wherein said predetermined voltage is equal to the supply voltage of said voltage source.
Claim 10
Dependent Claim
27 words
The static type semiconductor memory device according to claim 3, wherein said predetermined voltage is of any level lower than the supply voltage of said voltage source.
Claim 11
Dependent Claim
98 words
An operating method of a static type semiconductor memory device which comprises a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop, comprising the steps of: selectively designating a normal mode and a test mode; supplying a first drive voltage to said plurality of memory cells in response to said normal mode having been selectively designated; interrupting said first drive voltage; and supplying a second drive voltage lower than said first drive voltage to said plurality of memory cells in response to said test mode having been selectively designated.
Claim 12
Dependent Claim
98 words
An operating method of a static type semiconductor memory device which comprises a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop, comprising the steps of: selectively designating a normal mode and a test mode; supplying a first drive voltage to said plurality of memory cells in response to said normal mode having been selectively designated; interrupting said first drive voltage; and supplying a second drive voltage lower than said first drive voltage to said plurality of memory cells in response to said test mode having been selectively designated.
Claim 13
Dependent Claim
212 words
A static type semiconductor memory device, comprising: a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop; designating means for outputting a first signal representing a normal operating mode of said semiconductor memory device and outputting a second signal representing a test operating mode of said semiconductor memory device; and drive voltage generating means connected to said plurality of memory cells and responsive to said first and second output signals for generating first and second drive voltages to drive said plurality of memory cells; wherein said second drive voltage has a lower value than said first drive voltage, said designating means designates the normal mode and a plurality of test modes, said second drive voltage generated from said drive voltage generating means includes a plurality of drive voltages each corresponding to one of said plurality of test modes, and said drive voltage generating means is responsive to an output from said designating means designating the normal mode to generate said first drive voltage and apply the same to said plurality of memory cells, and responsive to outputs from said designating means designating said plurality of test modes to generate a corresponding drive voltage and apply the same to said plurality of memory cells.
Claim 14
Dependent Claim
212 words
A static type semiconductor memory device, comprising: a plurality of memory cells arranged in a matrix of rows and columns, each memory cell including a flip-flop; designating means for outputting a first signal representing a normal operating mode of said semiconductor memory device and outputting a second signal representing a test operating mode of said semiconductor memory device; and drive voltage generating means connected to said plurality of memory cells and responsive to said first and second output signals for generating first and second drive voltages to drive said plurality of memory cells; wherein said second drive voltage has a lower value than said first drive voltage, said designating means designates the normal mode and a plurality of test modes, said second drive voltage generated from said drive voltage generating means includes a plurality of drive voltages each corresponding to one of said plurality of test modes, and said drive voltage generating means is responsive to an output from said designating means designating the normal mode to generate said first drive voltage and apply the same to said plurality of memory cells, and responsive to outputs from said designating means designating said plurality of test modes to generate a corresponding drive voltage and apply the same to said plurality of memory cells.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |