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US5075763A
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High temperature metallization system for contacting semiconductor materials
Assignee: Kopin Corp
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Filing: 1990-07-23
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Granted: 1991-12-24
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Expires: 2010-07-23
Abstract
Abstract A metallization system for contacting semiconductor materials employed in high temperature applications that is thermally stable. The system can be utilized in the fabrication of electronic devices such as diodes, lasers, transistors, solar cells, and integrated circuits comprised of such devices.
Inventors
- 👤 Mark B. Spitzer
- 👤 Jason E. Dingle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:26
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
106 words
A contact metallization system for electrically contacting a III-V semiconductor material comprising: a semiconductor surface of a III-V semiconductor body having non-planar regions formed thereon; a diffusion barrier layer formed over the semiconductor surface and said non-planar regions such that diffusion of material between the semiconductor surface and an overlying conductor is reduced; and a patterned conductor formed on the barrier layer and in conductive contact with the semiconductor surface through the barrier layer, the conductor having separated portions which do not overly the non-planar regions, such that current is transported between separated portions of the patterned conductor across said non-planar regions, through the barrier layer.
Claim 2
Dependent Claim
106 words
A contact metallization system for electrically contacting a III-V semiconductor material comprising: a semiconductor surface of a III-V semiconductor body having non-planar regions formed thereon; a diffusion barrier layer formed over the semiconductor surface and said non-planar regions such that diffusion of material between the semiconductor surface and an overlying conductor is reduced; and a patterned conductor formed on the barrier layer and in conductive contact with the semiconductor surface through the barrier layer, the conductor having separated portions which do not overly the non-planar regions, such that current is transported between separated portions of the patterned conductor across said non-planar regions, through the barrier layer.
Claim 3
Dependent Claim
18 words
The contact metallization system of claim 1 wherein said non-planar regions comprise an insulator formed over the semiconductor.
Claim 4
Dependent Claim
15 words
The contact metallization system of claim 1 wherein the III-V semiconductor body comprises gallium arsenide.
Claim 5
Dependent Claim
18 words
The contact metallization system of claim 1 wherein the metallization system comprises a grid for a photovoltaic device.
Claim 6
Dependent Claim
19 words
The contact metallization system of claim 4 wherein the grid collects current from a solar cell comprising gallium arsenide.
Claim 7
Dependent Claim
104 words
A contact metallization system for electrically contacting a semiconductor material comprising: a semiconductor surface of a semiconductor body having non-planar regions formed thereon; a diffusion barrier layer formed over the semiconductor surface and said non-planar regions such that diffusion of material between the semiconductor surface and an overlying conductor is reduced; and a patterned conductor formed on the barrier layer and in conductive contact with the semiconductor surface through the barrier layer, the conductor having separated portions which do not overly the non-planar regions, such that current is transported between separated portions of the patterned conductor across said non-planar regions, through the barrier layer.
Claim 8
Dependent Claim
104 words
A contact metallization system for electrically contacting a semiconductor material comprising: a semiconductor surface of a semiconductor body having non-planar regions formed thereon; a diffusion barrier layer formed over the semiconductor surface and said non-planar regions such that diffusion of material between the semiconductor surface and an overlying conductor is reduced; and a patterned conductor formed on the barrier layer and in conductive contact with the semiconductor surface through the barrier layer, the conductor having separated portions which do not overly the non-planar regions, such that current is transported between separated portions of the patterned conductor across said non-planar regions, through the barrier layer.
Claim 9
Dependent Claim
19 words
The contact metallization system of claim 6 wherein the metallization contacts a light incident surface of a photovoltaic device.
Claim 10
Dependent Claim
19 words
The contact metallization system of claim 6 wherein the metallization system comprises a collection grid for a solar cell.
Claim 11
Dependent Claim
19 words
The contact metallization system of claim 6 wherein said non-planar regions comprise an insulator formed over the semiconductor body.
Claim 12
Dependent Claim
15 words
The contact metallization system of claim 6 wherein the semiconductor body comprises a mesa structure.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-23 | 1995-06-24 | 1995-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-23 | 1999-06-24 | 1999-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-23 | 2003-06-24 | 2003-12-24 | $7700.00 | Window Closed / Lapsed |