Patent US3810693A successfully refreshed from Google Patents.
Patent US5073506A successfully refreshed from Google Patents.
US5073506A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a self-aligned lateral bipolar SOI transistor
Assignee: Honeywell International Inc
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Filing: 1991-02-14
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Granted: 1991-12-17
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Expires: 2011-02-14
Abstract
Abstract A method for making a lateral bipolar transistor using SOI technology. A base mask is formed on the surface of a silicon island and its sidewalls coated with a layer of silicon dioxide. After local oxidization of the silicon island, emitter and collector regions are implanted using the base mask and the silicon dioxide deposited on the sidewalls of the base mask as a mask. The base mask is then removed and a shallow base contact region is implanted in the base region previously shielded by the base mask. The remaining silicon dioxide deposited on the sidewalls of the base mask form vertical spacers which are used as a self-aligned mask for forming silicide contacts on the emitter, collector and base contact regions. These remaining silicon dioxide vertical spacers physically separate emitter-base and base collector junctions from the highly doped base contact area and electrically isolate the silicide contacts.
Inventors
- 👤 Witold P. Maszara
- 👤 Anthony L. Caviglia
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:45
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/041; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; Y; Y10; Y10S; Y10S148/00; Y10S148/01
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
279 words
A method for making a lateral bipolar transistor using SOI technology comprising: forming a silicon island on an insulating substrate, said silicon island having a first conductivity type; forming a base mask on said silicon island, said base mask having a top surface and sidewalls; depositing a layer of silicon dioxide on said silicon island, said layer of silicon dioxide covering said top surface and said sidewalls of said base mask; ion etching to remove said layer of silicon dioxide from the top surfaces of said silicon island and said base mask and to partially remove a portion of said layer of silicon dioxide deposited on said sidewall of said base mask to produce vertical side wall spacers; locally oxidizing said silicon island to produce an oxide layer on said top surface of said silicon island not protected by said base mask and said vertical sidewall spacers; implanting said regions of said silicon island not masked by said base mask and said vertical sidewall spacers through said oxide layer with a first dopant of a second conductivity type to form an emitter region and a collector region in said silicon island on opposite sides of said base mask; removing said base mask by wet etching to uncover a base region; implanting said base region with a second dopant of said first conductivity type to form a shallow base contact region, said oxide layer shielding said emitter and collector regions from being implanted by said second dopant; ion etching to remove said oxide layer over said emitter and collector regions; and forming silicide contacts on said emitter, collector and base contact regions using said vertical sidewall spacers as a mask.
Claim 2
Independent Claim
279 words
A method for making a lateral bipolar transistor using SOI technology comprising: forming a silicon island on an insulating substrate, said silicon island having a first conductivity type; forming a base mask on said silicon island, said base mask having a top surface and sidewalls; depositing a layer of silicon dioxide on said silicon island, said layer of silicon dioxide covering said top surface and said sidewalls of said base mask; ion etching to remove said layer of silicon dioxide from the top surfaces of said silicon island and said base mask and to partially remove a portion of said layer of silicon dioxide deposited on said sidewall of said base mask to produce vertical side wall spacers; locally oxidizing said silicon island to produce an oxide layer on said top surface of said silicon island not protected by said base mask and said vertical sidewall spacers; implanting said regions of said silicon island not masked by said base mask and said vertical sidewall spacers through said oxide layer with a first dopant of a second conductivity type to form an emitter region and a collector region in said silicon island on opposite sides of said base mask; removing said base mask by wet etching to uncover a base region; implanting said base region with a second dopant of said first conductivity type to form a shallow base contact region, said oxide layer shielding said emitter and collector regions from being implanted by said second dopant; ion etching to remove said oxide layer over said emitter and collector regions; and forming silicide contacts on said emitter, collector and base contact regions using said vertical sidewall spacers as a mask.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said step of forming a base mask forms a nitride base mask.
Claim 4
Dependent Claim
68 words
The method of claim 1 wherein said step of forming a nitride base mask comprises the steps of: depositing a layer of nitride on said silicon island; applying a photoresist mask on said layer of nitride to define a base region; ion etching to remove those portions of said layer of nitride not protected by said photoresist mask to form said base mask; and removing said photoresist mask.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein said step of locally oxidizing said silicon island produces an oxide layer on said top surface of said silicon island approximately 0.1 microns thick.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said step of implanting with said first dopant implants arsenic ions.
Claim 7
Dependent Claim
29 words
The method of claim 5 wherein the concentration of said first dopant in said emitter and collector regions is approximately 10 19 to 10 20 ions per cubic centimeter.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein said step of implanting with said second dopant implants boron.
Claim 9
Dependent Claim
28 words
The method of claim 7 wherein the concentration of aid second dopant in said base contact region is approximately 10 19 to 10 20 ions per cubic centimeter.
Claim 10
Dependent Claim
29 words
The method of claim 1 further including the step of depositing conductive metal electrodes independently connected to said aide silicide contacts on said emitter, collector and base contact regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-16 | 1995-06-17 | 1995-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-16 | 1999-06-17 | 1999-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-16 | 2003-06-17 | 2003-12-17 | $7700.00 | Window Closed / Lapsed |