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US5068827A
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Method of applying a program voltage for a non-volatile semiconductor memory and apparatus for implementing the same
Assignee: Toshiba Corp
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Filing: 1989-12-11
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Granted: 1991-11-26
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Expires: 2009-12-11
Abstract
Abstract In a method of applying a voltage pulse for injecting/extracting electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to presence and absence of storage of electrons are caused to correspond to binary information, the method includes the steps of generating a plurality of voltage pulses each having an ability of injecting or extracting only a portion of all electrons to be stored, and applying the plurality of voltage pulses to the non-volatile semiconductor memory to thereby carry out injection/extraction of all the electrons.
Inventors
- 👤 Seiji Yamada
- 👤 Kiyomi Naruke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:28
CPC Classifications
G; G11; G11C; G11C7/00; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/14
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
155 words
A method of applying a voltage pulse for carrying out the injection/extraction of electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to the presence and absence of the storage of the electrons are caused to correspond to binary information, the method comprising the steps of: generating a plurality of voltage pulses, each pulse ejecting or extracting only a portion of all electrons to be stored; causing each of the plurality of voltage pulses to rise steeply so that a Fowler-Nordheim current flows to a non-negligible degree even after each pulse has risen, and wherein each voltage pulse is caused to have a sufficiently short pulse width, so as to interrupt in the course of its fall the Fowler-Nordheim current flowing after completion of the rise; and applying the plurality of voltage pulses to the non-volatile semiconductor memory to thereby inject or extract all of the electrons.
Claim 2
Independent Claim
155 words
A method of applying a voltage pulse for carrying out the injection/extraction of electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to the presence and absence of the storage of the electrons are caused to correspond to binary information, the method comprising the steps of: generating a plurality of voltage pulses, each pulse ejecting or extracting only a portion of all electrons to be stored; causing each of the plurality of voltage pulses to rise steeply so that a Fowler-Nordheim current flows to a non-negligible degree even after each pulse has risen, and wherein each voltage pulse is caused to have a sufficiently short pulse width, so as to interrupt in the course of its fall the Fowler-Nordheim current flowing after completion of the rise; and applying the plurality of voltage pulses to the non-volatile semiconductor memory to thereby inject or extract all of the electrons.
Claim 3
Dependent Claim
28 words
A method as set forth in claim 1, wherein the plurality of voltage pulses are such that their respective peak values gradually rise in order of occurrence thereof.
Claim 4
Independent Claim
125 words
A method of applying a voltage pulse for carrying out the injection/extraction of electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to the presence and absence of the storage of electrons are caused to correspond to binary information, the method comprising the steps of: generating a plurality of rectangular voltage pulses, each pulse having a predetermined voltage level and a predetermined width, chopping each rectangular pulse generated by the generating means to form narrow pulses, the narrow pulses each having the ability of interjecting or extracting only a portion of all electrons to be stored; and applying the plurality of voltage pulses to the non-volatile semiconductor memory, thereby to inject or extract all of the electrons.
Claim 5
Independent Claim
125 words
A method of applying a voltage pulse for carrying out the injection/extraction of electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to the presence and absence of the storage of electrons are caused to correspond to binary information, the method comprising the steps of: generating a plurality of rectangular voltage pulses, each pulse having a predetermined voltage level and a predetermined width, chopping each rectangular pulse generated by the generating means to form narrow pulses, the narrow pulses each having the ability of interjecting or extracting only a portion of all electrons to be stored; and applying the plurality of voltage pulses to the non-volatile semiconductor memory, thereby to inject or extract all of the electrons.
Claim 6
Dependent Claim
55 words
An apparatus as set forth in claim 3, including limiter means provided between the chopper means and the supply means, and responsive to the plurality of narrow pulses from the chopper means, thus to limit voltage levels of the respective pulses so that the voltage levels gradually rise in order of occurrence of the pulses.
Claim 7
Dependent Claim
71 words
An apparatus as set forth in claim 3, wherein the chopper means allows each narrow pulse to rise steeply so that a Fowler-Nordheim current flows into the selected cell to a non-negligible degree even after each pulse has risen, and allows each narrow pulse to have a sufficiently short pulse width so as to interrupt, in the course of its fall, the Fowler-Nordheim current flowing after the completion of the rise.
References Cited (Backward Citations)
US4964081A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |