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US5068709A
Expired / Lapsed
US
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Semiconductor device having a backplate electrode
Assignee: Toshiba Corp
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Filing: 1989-07-14
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Granted: 1991-11-26
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Expires: 2009-07-14
Abstract
Abstract A semiconductor device includes a semiconductor pellet, and a metal nitride film or a metal silicide film, each having conductivity and an anti-oxidation property, and being formed on one surface of the pellet to cause the surface to have a substantially uniform potential.
Inventors
- 👤 Hidemitsu Egawa
- 👤 Riichirou Aoki
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:23
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W20/00; H10W20/40; H10W72/351; H10W72/352; H10W72/50; H10W72/59; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
158 words
A semiconductor device comprising: a semiconductor pellet having a top surface on which an integrated circuit is formed an a back surface formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said silicon back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer.
Claim 2
Dependent Claim
158 words
A semiconductor device comprising: a semiconductor pellet having a top surface on which an integrated circuit is formed an a back surface formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said silicon back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer.
Claim 3
Dependent Claim
17 words
A device according to claim 1, wherein said metal layer includes two films of different backplate metals.
Claim 4
Dependent Claim
165 words
A semiconductor device comprising: a semiconductor pellet having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form a backplate electrode surface layer, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the backplate electrode surface layer.
Claim 5
Dependent Claim
165 words
A semiconductor device comprising: a semiconductor pellet having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form a backplate electrode surface layer, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the backplate electrode surface layer.
Claim 6
Dependent Claim
17 words
A device according to claim 3, wherein said metal layer includes two films of different backplate metals.
Claim 7
Dependent Claim
172 words
A semiconductor device comprising: a semiconductor pellet integrating a number of circuit elements therein having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form a backplate electrode surface layer, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the backplate electrode surface layer.
Claim 8
Dependent Claim
172 words
A semiconductor device comprising: a semiconductor pellet integrating a number of circuit elements therein having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form a backplate electrode surface layer, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the backplate electrode surface layer.
Claim 9
Dependent Claim
17 words
A device according to claim 5, wherein said metal layer includes two films of different backplate metals.
Claim 10
Dependent Claim
176 words
A semiconductor device comprising: a semiconductor pellet integrating a number of circuit elements therein having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form the outermost surface of the semiconductor device, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the outermost surface of the semiconductor device.
Claim 11
Dependent Claim
176 words
A semiconductor device comprising: a semiconductor pellet integrating a number of circuit elements therein having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form the outermost surface of the semiconductor device, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the outermost surface of the semiconductor device.
Claim 12
Dependent Claim
17 words
A device according to claim 7, wherein said metal layer includes two films of different backplate metals.
Claim 13
Dependent Claim
169 words
A semiconductor device comprising: a semiconductor pellet having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form the outermost surface of the semiconductor device, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the outermost surface of the semiconductor device.
Claim 14
Dependent Claim
169 words
A semiconductor device comprising: a semiconductor pellet having a top surface and a back surface and formed by a semiconductor material, wherein said semiconductor pellet is formed of silicon; and backplate electrode means, including a metal silicide film having conductivity and an anti-oxidation property and wherein the metal silicide film forms the outermost surface of the backplate electrode means, said backplate electrode means being formed on the entire back surface of said pellet to form the outermost surface of the semiconductor device, for obtaining at said back surface of said pellet a substantially uniform backplate potential; wherein said metal silicide film essentially consists of a silicide of any of the following backplate metals; Ti, Mo, Cu, Cr, Ni, Fe, Co, W, Mn, and Pd; and wherein said backplate electrode means includes a metal layer which is formed on said back surface and which contains any of said backplate metals, and said metal silicide film is formed on said metal layer to form the outermost surface of the semiconductor device.
Claim 15
Dependent Claim
17 words
A device according to claim 9, wherein said metal layer includes two films of different backplate metals.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |