Patent US5068699A successfully refreshed from Google Patents.
US5068699A
Expired / Lapsed
US
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Thin film transistor for a plate display
Assignee: Samsung Electronics Co Ltd
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Filing: 1989-12-15
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Granted: 1991-11-26
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Expires: 2009-12-15
Abstract
Abstract There is disclosed a thin film transistor for a plate display comprising first and second gates of different metals stacked one on top of the other on a glass substrate, a first insulating layer of tantalum oxide film formed on top of said second gate, second and third insulating layers of silicon dioxide formed successively on the first insulating layer and a semiconductor layer deposited on said third insulating layer.
Inventors
- 👤 Kyujeong Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:36
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; G02F1/136286; G02F1/13629
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
101 words
A thin film transistor for a plate display comprising first and second gates (2a and 2b) of different materials stacked one on top of the other, and a storage capacitor (9) on a glass substrate (1), the first gate (2a) comprising indium tin oxide and the second gate (2b) comprising tantalum, the capacitor (9) having an electrode of indium tin oxide, first, second and third insulating layers (3a, 3b and 3c) formed one on top of another on said second gate, the first insulating layer comprising Ta 2 O 5 and a semiconductor layer (4) deposited on said third insulating layer.
Claim 2
Dependent Claim
101 words
A thin film transistor for a plate display comprising first and second gates (2a and 2b) of different materials stacked one on top of the other, and a storage capacitor (9) on a glass substrate (1), the first gate (2a) comprising indium tin oxide and the second gate (2b) comprising tantalum, the capacitor (9) having an electrode of indium tin oxide, first, second and third insulating layers (3a, 3b and 3c) formed one on top of another on said second gate, the first insulating layer comprising Ta 2 O 5 and a semiconductor layer (4) deposited on said third insulating layer.
Claim 3
Dependent Claim
19 words
A thin film transistor as recited in claim 1, wherein the second and third insulating layers comprise silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |