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US5066938A
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Diamond film thermistor
Assignee: Kobe Steel Ltd
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Filing: 1990-10-11
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Granted: 1991-11-19
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Expires: 2010-10-11
Abstract
Abstract A diamond thin film thermistor having a substrate, an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis, a semiconducting diamond layer as a temperature-sensing part on the electrically insulating diamond layer by vapor-phase synthesis, and metal thin film electrodes attached to the semiconducting diamond layer. A plurality of such diamond thin film thermistors can simultaneously be formed on a single substrate, and the substrate is cut with a dicing saw to provide individual diamond thin film thermistor chips of the same quality.
Inventors
- 👤 Koji Kobashi
- 👤 Koichi Miyata
- 👤 Kazuo Kumagai
- 👤 Takayoshi Inoue
- 👤 Hiroyuki Tachibana
- 👤 Akimitsu Nakaue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:27
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/04; H01C7/041; G; G01; G01K; G01K7/00; G01K7/16; G01K7/22; G01K7/223; H10; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
49 words
A diamond thin film thermistor comprising: a substrate; an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis; a semiconducting diamond layer formed by vapor-phase synthesis as a temperature-sensing part on the electrically insulating diamond layer; and metal thin film electrodes attached to the semiconducting diamond layer.
Claim 2
Dependent Claim
49 words
A diamond thin film thermistor comprising: a substrate; an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis; a semiconducting diamond layer formed by vapor-phase synthesis as a temperature-sensing part on the electrically insulating diamond layer; and metal thin film electrodes attached to the semiconducting diamond layer.
Claim 3
Dependent Claim
35 words
A diamond thin film thermistor according to claim 1, wherein the temperature-sensing part is formed in a pattern of a width not greater than 1 mm by the selective deposition of the semiconducting diamond layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-18 | 1995-05-20 | 1995-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-18 | 1999-05-20 | 1999-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-18 | 2003-05-20 | 2003-11-19 | $7700.00 | Window Closed / Lapsed |