US5066355A
Expired / Lapsed
US
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Method of producing hetero structure
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1989-11-16
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Granted: 1991-11-19
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Expires: 2009-11-16
Abstract
Abstract A method of producing a hetero structure, including the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on the first single crystal layer by hetero epitaxial growth, the second single crystal layer being formed of semiconductor or metal silicide different from the material of the first single crystal layer, wherein both of the steps are continuously conducted without taking the hetero structure out of a producing device. Further, the number of the hydrogen atoms or the halogen atoms to be deposited is equal to or in the range of ±50% with reference to the number of dangling bonds existing in a hetero interface between the first single crystal layer and the second single crystal layer, so that the lattice defects in the hetero interface can be reduced.
Inventors
- 👤 Masanobu Miyao
- 👤 Kiyokazu Nakagawa
- 👤 Kiyonori Ohyu
- 👤 Eiichi Murakami
- 👤 Takashi Ohshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:22
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; Y; Y10; Y10S; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
97 words
A method of producing a hetero structure, comprising the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on said first single crystal layer by hetero epitaxial growth, said second single crystal layer being formed of semiconductor or metal silicide having a different lattice constant from the lattice constant of the material forming said first single crystal layer, wherein both of said steps are continuously conducted without taking said hetero structure out of a producing apparatus.
Claim 2
Independent Claim
97 words
A method of producing a hetero structure, comprising the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on said first single crystal layer by hetero epitaxial growth, said second single crystal layer being formed of semiconductor or metal silicide having a different lattice constant from the lattice constant of the material forming said first single crystal layer, wherein both of said steps are continuously conducted without taking said hetero structure out of a producing apparatus.
Claim 3
Dependent Claim
55 words
The method as defined in claim 1, wherein the number of said hydrogen atoms or said halogen atoms to be deposited is equal to or in the range of ±50% with reference to the number of dangling bonds existing in a hetero interface between said first single crystal layer and said second single crystal layer.
Claim 4
Dependent Claim
20 words
The method for producing a hetero structure according to claim 1, wherein said first single crystal layer comprises a semiconductor.
Claim 5
Dependent Claim
16 words
The method for producing a hetero structure according to claim 3, wherein said semiconductor is Si.
Claim 6
Dependent Claim
20 words
The method for producing a hetero structure according to claim 1, wherein said first single crystal layer comprises metal silicide.
Claim 7
Dependent Claim
19 words
The method for producing a hetero structure according to claim 5, wherein said metal silicide is CoSi 2 .
Claim 8
Dependent Claim
46 words
The method for producing a hetero structure according to claim 1, wherein the step of depositing hydrogen atoms or halogen atoms onto the surface of said first single crystal layer comprises spraying hydrogen gas or halogen gas onto the surface of said first single crystal layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-11-18 | 1995-05-20 | 1995-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-18 | 1999-05-20 | 1999-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-18 | 2003-05-20 | 2003-11-19 | $7700.00 | Window Closed / Lapsed |