Abstract A booster circuit comprises first to third MOS-FETs, and a capacitance element. In the first MOS-FET, a gate is connected to a first signal terminal, a drain is connected to an output terminal, and a source is connected to a first power supply. In the second MOS-FET, a gate is connected to a predetermined point, a drain is connected to a signal terminal, to which a first signal being an inverted signal of a signal applied to the first signal terminal is applied, and a source is connected to the predetermined point. In the third MOS-FET, a gate is connected to a second power supply, a drain is connected to a second signal terminal, and a source is connected to the predetermined point. The capacitance element is connected at one terminal to a signal terminal, to which a second signal being an inverted signal of a signal applied to the second signal terminal is applied, and at the other terminal to the output terminal. In operation, a predetermined voltage is obtained with a high speed at the output terminal.
A booster circuit, comprising: a first field effect transistor having a gate connected to a first signal terminal supplied with a first signal and a source-drain path connected between an output terminal and a first power supply; a second field effect transistor having a gate connected to a first node and a source-drain path connected between said output terminal and a second node; first means for supplying said second node with an inverted signal of said first signal; a third field effect transistor having a gate connected to a second power supply and a source-drain path connected between a second signal terminal and said first node, said second signal terminal being supplied with a second signal different in phase from said first signal; a capacitance element connected between said output terminal and a third node; and second means for supplying said third node with a third signal relative to said second signal.
Claim 2
Dependent Claim
152 words
A booster circuit, comprising: a first field effect transistor having a gate connected to a first signal terminal supplied with a first signal and a source-drain path connected between an output terminal and a first power supply; a second field effect transistor having a gate connected to a first node and a source-drain path connected between said output terminal and a second node; first means for supplying said second node with an inverted signal of said first signal; a third field effect transistor having a gate connected to a second power supply and a source-drain path connected between a second signal terminal and said first node, said second signal terminal being supplied with a second signal different in phase from said first signal; a capacitance element connected between said output terminal and a third node; and second means for supplying said third node with a third signal relative to said second signal.
Claim 3
Dependent Claim
32 words
A booster circuit, according to claim 1, further comprising: a delay circuit inserted between said first and second signal terminals, said delay circuit delaying said first signal to produce said second signal.
Claim 4
Dependent Claim
28 words
A booster circuit, according to claim 1, wherein: said second means comprises an inverter circuit for producing an inverted signal of said second signal as said third signal.
Claim 5
Dependent Claim
37 words
A booster circuit, according to claim 1, wherein: said second means comprises a NOR circuit having a first input terminal connected to said first signal terminal and a second input terminal connected to said second signal terminal.
Claim 6
Dependent Claim
36 words
A booster circuit, according to claim 1, further comprising: a fourth field effect transistor having a gate connected to said output terminal and a source-draing path connected between said second power supply and said output terminal.