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US5057336A
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Method of forming high purity SiO2 thin film
Assignee: Mitsubishi Electric Corp
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Filing: 1990-06-05
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Granted: 1991-10-15
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Expires: 2010-06-05
Abstract
Abstract A material for forming a high purity thin film which includes a silicone ladder polymer dissolved in an organic solvent is applied to a substrate to form a thin film thereon. The thin film is then heated, thereby removing the solvent and simultaneously curing the thin film. Subsequently, the cured thin film is exposed to an oxygen plasma to form a high purity SiO 2 thin film on the substrate. Although the method consists of simple processes and employs low treatment temperatures, it is capable of forming a high purity SiO 2 thin film which exhibits excellent step coverage and high dielectric breakdown strength.
Inventors
- 👤 Etsushi Adachi
- 👤 Hiroshi Adachi
- 👤 Osamu Hayashi
- 👤 Kazuo Okahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:28
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/122; C23C18/125; C23C18/1279; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
136 words
A method of forming a high purity SiO 2 thin film comprising: coating a surface of a substrate with a film of a solution comprising an organic solvent and a silicone ladder polymer having the general formula ##STR4## where R 1 represents a phenyl group or a lower alkyl group; R 2 represents a hydrogen atom, a methyl group, or an ethyl group; and n is any integer from 2 to 1000 wherein said silicone ladder polymer contains less than 0.1 parts per million of alkali metals, iron, lead, copper, and hydrogen halide and less than 0.1 parts per billion of uranium and thorium; heating said film, thereby driving off said solvent and simultaneously curing said film; and exposing the cured film to an oxygen plasma at a pressure from 5×10 -3 Torr to 2 Torr.
Claim 2
Independent Claim
136 words
A method of forming a high purity SiO 2 thin film comprising: coating a surface of a substrate with a film of a solution comprising an organic solvent and a silicone ladder polymer having the general formula ##STR4## where R 1 represents a phenyl group or a lower alkyl group; R 2 represents a hydrogen atom, a methyl group, or an ethyl group; and n is any integer from 2 to 1000 wherein said silicone ladder polymer contains less than 0.1 parts per million of alkali metals, iron, lead, copper, and hydrogen halide and less than 0.1 parts per billion of uranium and thorium; heating said film, thereby driving off said solvent and simultaneously curing said film; and exposing the cured film to an oxygen plasma at a pressure from 5×10 -3 Torr to 2 Torr.
Claim 3
Dependent Claim
20 words
A method according to claim 1 including, while exposing the cured film to the oxygen plasma, heating the cured film.
Claim 4
Dependent Claim
45 words
A method according to claim 1 including, before coating the surface of the substrate with the solution, preparing the solution for coating the substrate by dissolving said silicone ladder polymer in said organic solvent in a concentration of from 5 to 30 percent by weight.
Claim 5
Dependent Claim
16 words
A method according to claim 1 wherein n is in the range of 10 to 200.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-14 | 1995-04-15 | 1995-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-14 | 1999-04-15 | 1999-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-14 | 2003-04-15 | 2003-10-15 | $7700.00 | Window Closed / Lapsed |