US5055906A
Expired / Lapsed
US
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Semiconductor device having a composite insulating interlayer
Assignee: Toshiba Corp
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Filing: 1991-02-12
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Granted: 1991-10-08
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Expires: 2011-02-12
Abstract
Abstract A semiconductor device has a first interconnection pattern formed on a semiconductor substrate, and a second interconnection pattern located in and over a through hole formed at a composite insulating layer structure. The composite insulating layer structure is constituted by a first inorganic insulating film and an organic insulating film. At a peripheral region of the second interconnection pattern, the organic insulating film is partially eliminated to form an eliminated portion. The semiconductor device also has a second inorganic insulating film which is formed over the organic insulating film and is directly formed on the first inorganic insulating film, via the eliminated portion.
Inventors
- 👤 Yasukazu Mase
- 👤 Masahiro Abe
- 👤 Tomie Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:13
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D86/441; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/01; H10W20/031; H10W20/41; H10W20/42; H10W20/47
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
127 words
A semiconductor device of multi-layered structure, comprising: a plurality of interconnection layers formed on a semi-conductor substrate; a composite insulating film structure formed on an insulating film overlying said semiconductor substrate and having a first inorganic insulating film formed over said semiconductor substrate; an organic insulating film formed on said first inorganic insulating film and having an eliminated portion and having a portion terminating on a surface of said first inorganic insulating film to form a step structure therewith at a location separated from said interconnection layers, said organic insulating film having protruding portions which are not covered by said interconnection layers; and a second inorganic insulating film formed on said organic insulating film and formed directly on said first inorganic insulating film through said eliminated portion.
Claim 2
Dependent Claim
127 words
A semiconductor device of multi-layered structure, comprising: a plurality of interconnection layers formed on a semi-conductor substrate; a composite insulating film structure formed on an insulating film overlying said semiconductor substrate and having a first inorganic insulating film formed over said semiconductor substrate; an organic insulating film formed on said first inorganic insulating film and having an eliminated portion and having a portion terminating on a surface of said first inorganic insulating film to form a step structure therewith at a location separated from said interconnection layers, said organic insulating film having protruding portions which are not covered by said interconnection layers; and a second inorganic insulating film formed on said organic insulating film and formed directly on said first inorganic insulating film through said eliminated portion.
Claim 3
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein two or more of said composite insulating film structures are formed over said semiconductor substrate.
Claim 4
Dependent Claim
26 words
A semiconductor device according to claim 1, further including a capacitive element formed over said semiconductor substrate with said composite insulating film structure constituting a dielectric.
Claim 5
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said eliminated portion has a plain-like figure.
Claim 6
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said eliminated portion has a linear-like figure.
Claim 7
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said semiconductor substrate has an uneven surface.
Claim 8
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said first inorganic insulating film is formed of an oxide.
Claim 9
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said first inorganic insulating film is formed of a nitride.
Claim 10
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said first inorganic insulating film is formed of a carbide.
Claim 11
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said organic insulating film is formed of polyimide.
Claim 12
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said second inorganic insulating film is formed of an oxide.
Claim 13
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said second inorganic insulating film is formed of a nitride.
Claim 14
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said second inorganic insulating film is made of a carbide.
Claim 15
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said first and second inorganic insulating films are formed of the same type of material.
Claim 16
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein said first and second inorganic insulating films are formed of a different material.
Claim 17
Dependent Claim
18 words
A semiconductor device according to claim 7 or 11, wherein said oxide is formed of a silicon oxide.
Claim 18
Dependent Claim
18 words
A semiconductor device according to claim 8 or 12, wherein said nitride is formed of a silicon nitride.
Claim 19
Dependent Claim
18 words
A semiconductor device according to claim 9 or 13 wherein said carbide is formed of a silcon carbide.
Claim 20
Dependent Claim
153 words
A semiconductor device including: a composite insulating film structure formed on an insulating film overlaying a semiconductor substrate and having a first inorganic insulating film formed on the semiconductor substrate; and organic insulating film formed on the first inorganic film and having an eliminated portion; a second inorganic insulating film formed on the organic insulating film and directly on the first inorganic insulating film at a location of said eliminated portion of said organic insulating film; interconnection layers formed on said semiconductor substrate, said interconnection layers covering one portion of said organic insulating film, with said organic insulating film having protruding portions not covered by said interconnection layers and said organic insulating film having a portion terminating on a surface of said first inorganic insulating film to form a step structure therewith at a location separated from said interconnection layers; and capacitive element formed with said composite insulating film structure as a dielectric.
Claim 21
Dependent Claim
153 words
A semiconductor device including: a composite insulating film structure formed on an insulating film overlaying a semiconductor substrate and having a first inorganic insulating film formed on the semiconductor substrate; and organic insulating film formed on the first inorganic film and having an eliminated portion; a second inorganic insulating film formed on the organic insulating film and directly on the first inorganic insulating film at a location of said eliminated portion of said organic insulating film; interconnection layers formed on said semiconductor substrate, said interconnection layers covering one portion of said organic insulating film, with said organic insulating film having protruding portions not covered by said interconnection layers and said organic insulating film having a portion terminating on a surface of said first inorganic insulating film to form a step structure therewith at a location separated from said interconnection layers; and capacitive element formed with said composite insulating film structure as a dielectric.
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