Patent US2672012A successfully refreshed from Google Patents.
Patent US5055893A successfully refreshed from Google Patents.
US5055893A
Expired / Lapsed
US
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Light-emitting diode array with reflective layer
Assignee: Eastman Kodak Co
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Filing: 1991-01-30
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Granted: 1991-10-08
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Expires: 2011-01-30
Abstract
Abstract A light-emitting diode array has an active layer on a surface of a substrate and a multiple reflective layer between the substrate and the active layer. The active layer is of a semiconductor material which emits light when subjected to carrier injection. The multiple reflective layer is formed of a plurality of pairs of layers of semiconductor materials having different refractive indexes. The layer of the multiple reflective layer which is adjacent the active layer has a higher energy gap than that of the active layer. The layers of the multiple reflective layer which have the higher refractive index have a smaller energy gap than the wavelength of the light emitted by the active layer.
Inventors
- 👤 Teruo Sasagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:14
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14; H10H20/00; H10H20/80; H10H20/81; H10H20/814
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
69 words
A light-emitting diode array comprised of a multiplicity of light-emitting diodes arranged on a single substrate, said light emitting diodes comprising: an active layer of a semiconductor material which emits light when subjected to carrier injection; and a reflective layer adjacent the active layer which confines the injected carriers in the active layer, reflects light from the active layer and confines and absorbs light moving between adjacent light-emitting diodes.
Claim 2
Dependent Claim
69 words
A light-emitting diode array comprised of a multiplicity of light-emitting diodes arranged on a single substrate, said light emitting diodes comprising: an active layer of a semiconductor material which emits light when subjected to carrier injection; and a reflective layer adjacent the active layer which confines the injected carriers in the active layer, reflects light from the active layer and confines and absorbs light moving between adjacent light-emitting diodes.
Claim 3
Dependent Claim
20 words
The light-emitting diode array of claim 1 in which the reflective layer is between the active layer and the substrate.
Claim 4
Dependent Claim
90 words
The light-emitting diode array of claim 2 in which the reflective layer comprises at least one pair of layers of semiconductor materials having different refractive indexes, the semiconductor material of the layer of the pair which is adjacent the active layer having an energy gap that is larger than the energy gap of the active layer and the semiconductor material of the layer of the pair which has the higher refractive index having an energy gap that is smaller than the wavelength of the light emitted by the active layer.
Claim 5
Dependent Claim
27 words
The light-emitting diode array of claim 3 in which the reflective layer comprises a plurality of pairs of said layers of semiconductor materials having different refractive indexes.
Claim 6
Dependent Claim
114 words
A light-emitting diode array comprised of a multiplicity of light-emitting diodes arranged on a single substrate, each light-emitting diode having an active layer which emits light when subjected to carrier injection, comprising: a multiple reflective layer provided between the substrate and the active layer and formed of alternating semiconductor layers with different refractive indexes, the semiconductor layer of the multiple reflective layer adjacent to the active layer having an energy gap that is larger than the energy gap of the active layer, and the semiconductor layers of the multiple reflective layer which have the higher reflective index having an energy gap that is smaller than the wavelength of light emitted by the active layer.
Claim 7
Dependent Claim
114 words
A light-emitting diode array comprised of a multiplicity of light-emitting diodes arranged on a single substrate, each light-emitting diode having an active layer which emits light when subjected to carrier injection, comprising: a multiple reflective layer provided between the substrate and the active layer and formed of alternating semiconductor layers with different refractive indexes, the semiconductor layer of the multiple reflective layer adjacent to the active layer having an energy gap that is larger than the energy gap of the active layer, and the semiconductor layers of the multiple reflective layer which have the higher reflective index having an energy gap that is smaller than the wavelength of light emitted by the active layer.
Claim 8
Dependent Claim
138 words
A light-emitting diode array comprising: a substrate of a semiconductor material of one conductivity type; a multiple reflective layer of the one conductivity type on a surface of said substrate; and an active layer of a semiconductor material which emits light when subjected to carrier injection on said multiple reflective layer, said active layer being defined to form spaced light-emitting diodes along said substrate; said multiple reflective layer comprising at least one pair of layers of semiconductor materials having different refractive indexes with the layer of the pair adjacent the active layer having a energy gap that is larger than the energy gap of the active layer and the layer of the pair which is of the higher refractive index having an energy gap that is smaller than the wavelength of the light emitted by the active layer.
Claim 9
Dependent Claim
138 words
A light-emitting diode array comprising: a substrate of a semiconductor material of one conductivity type; a multiple reflective layer of the one conductivity type on a surface of said substrate; and an active layer of a semiconductor material which emits light when subjected to carrier injection on said multiple reflective layer, said active layer being defined to form spaced light-emitting diodes along said substrate; said multiple reflective layer comprising at least one pair of layers of semiconductor materials having different refractive indexes with the layer of the pair adjacent the active layer having a energy gap that is larger than the energy gap of the active layer and the layer of the pair which is of the higher refractive index having an energy gap that is smaller than the wavelength of the light emitted by the active layer.
Claim 10
Dependent Claim
29 words
The light-emitting diode array of claim 6 in which the multiple reflective layer comprises a plurality of pairs of the layers of semiconductor materials having different indexes of refraction.
Claim 11
Dependent Claim
36 words
The light-emitting diode array of claim 7 in which the number and thicknesses of the layers of the multiple reflective layer provides the layer with a thickness equal to 1/4 the wavelength of the emitted light.
Claim 12
Dependent Claim
25 words
The light-emitting diode array of claim 6 in which the active layer is of a conductivity type opposite to that of the multiple reflective layer
Claim 13
Dependent Claim
32 words
The light-emitting diode array of claim 9 in which the active layer is defined into separate portions spaced along the substrate to form mesas, each of which defines a separate light-emitting diode.
Claim 14
Dependent Claim
40 words
The light-emitting diode array of claim lo further comprising a contact layer of a semiconductor material of the same conductivity type as the active layer but of higher conductivity over and electrically connected to each portion of the active layer.
Claim 15
Dependent Claim
29 words
The light-emitting diode array of claim 11 further comprising an electrode on each contact layer and an electrode on the surface of said substrate opposite the multiple reflective layer.
Claim 16
Dependent Claim
18 words
The light-emitting diode array of claim 12 in which the contact layer is directly on the active layer.
Claim 17
Dependent Claim
42 words
The light-emitting diode array of claim 13 further comprising a cladding layer of a semiconductor material of the same conductivity type as the outer layer directly on each portion of the active layer, and each contact layer is on a cladding layer.
Claim 18
Dependent Claim
47 words
The light-emitting diode array of claim 7 in which the active layer is undoped, and a plurality of spaced regions of a conductivity type opposite to that of the multiple reflective layer are in the active layer and define the active layer into the spaced light-emitting diodes.
Claim 19
Dependent Claim
34 words
The light-emitting diode array of claim 15 further comprising a separate contact layer of a semiconductor material of the same conductivity type as the regions but of higher conductivity on each of the regions.
Claim 20
Dependent Claim
31 words
The light-emitting diode array of claim 16 further comprising an electrode on each of the contact layers and an electrode on the surface of the substrate opposite the multiple reflective layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |