Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
60 words
A lateral varactor with staggered punch-through levels, comprising: an active layer disposed over a substrate; and an anode and a cathode disposed on said active layer; said anode having at least first and second sections, with the punch-through between said first section and said substrate occurring at a greater voltage than the punch-through between said second section and said substrate.
Claim 2
Dependent Claim
60 words
A lateral varactor with staggered punch-through levels, comprising: an active layer disposed over a substrate; and an anode and a cathode disposed on said active layer; said anode having at least first and second sections, with the punch-through between said first section and said substrate occurring at a greater voltage than the punch-through between said second section and said substrate.
Claim 3
Dependent Claim
30 words
The lateral varactor of claim 1, wherein the depth of said active layer under said first section is greater than the depth of said active layer under said second section.
Claim 4
Dependent Claim
23 words
The lateral varactor of claim 2, wherein said second anode section is recessed into said active layer relative to said first anode section.
Claim 5
Dependent Claim
27 words
The lateral varactor defined in claim 2, further comprising: a recess area formed in said active layer; said second anode section being disposed in said recess area.
Claim 6
Dependent Claim
16 words
The lateral varactor of claim 4, wherein said active layer depth is optimized for MESFET fabrication.
Claim 7
Dependent Claim
18 words
The lateral varactor of claim 1, wherein said active layer defines a substantially planar surface opposite said substrate.
Claim 8
Dependent Claim
59 words
The lateral varactor of claim 6, wherein: said anode is disposed on the surface of said active layer; said active layer having at least first and second regions respectively underlying said first and second anode sections, with the punch-through in said first active layer region occurring at a greater voltage than the punch-through in said second active layer region.
Claim 9
Dependent Claim
25 words
The lateral varactor of claim 7, wherein the depth of said active layer is selectively controlled to create said first and second active layer regions.
Claim 10
Dependent Claim
29 words
The lateral varactor of claim 7, wherein said active layer is formed by selectively implanting a dopant in said substrate to create said first and second active layer regions.
Claim 11
Dependent Claim
21 words
The lateral varactor of claim 7, wherein said first and second active layer regions respectively comprise first and second epitaxial layers.
Claim 12
Dependent Claim
28 words
The lateral varactor of claim 7, wherein said first and second active layer regions respectively comprise first and second selectively doped regions, each with a respective doping density.
Claim 13
Dependent Claim
39 words
The lateral varactor of claim 1, wherein: said cathode is U-shaped to define an interior anode area; said anode is formed by at least one elongate anode projection, including first and second anode sections, extending into said anode area.
Claim 14
Dependent Claim
32 words
The lateral varactor of claim 12, wherein said second anode section of each anode projection is recessed into said active layer relative to said corresponding first anode section of each anode projection.