Stabilized microwave varactor

Claim 2

A microwave varactor circuit comprising: a varactor; a microwave oscillating circuit connected to said varactor and having a minimum and a maximum microwave frequency of oscillation; a varactor bias regulator, connected to said varactor to supply a bias voltage thereto; said bias regulator having a response time corresponding to a frequency which is at least 10% of said minimum microwave frequency of oscillation; said bias regulator being connected to said varactor with an intervening impedance which is less than 10 ohms at said minimum microwave frequency of oscillation.

Claim 3

The varactor circuit of claim 1, wherein said varactor has a substantial rectification capability at frequencies near said minimum frequency but not at frequencies near said maximum frequency, and said bias regulator together with said intervening impedance has a maximum frequency which is at least 10% of the highest frequency at which said varactor has a substantial rectification capability.

Claim 4

The varactor circuit of claim 1, wherein said bias regulator circuit substantially comprises an emitter follower circuit including a bipolar transistor.

Claim 5

The varactor circuit of claim 3, wherein said varactor controls the oscillating frequency of said microwave oscillating circuit in response to said bias voltage, and said varactor has a substantial rectification capability at frequencies near said minimum frequency but not at frequencies near said maximum frequency, and said bias regulator circuit comprises means for bypassing said bipolar transistor at bias voltages corresponding to said maximum frequency.

Claim 6

The varactor circuit of claim 3, wherein said emitter follower circuit conducts current through at least some part thereof at any value of said bias voltage.

Claim 7

The varactor circuit of claim 1, wherein said maximum frequency is more than twice said minimum frequency.

Claim 8

The varactor circuit of claim 1, wherein said minimum frequency is more than 1 GHz.

Claim 9

The varactor circuit of claim 1, wherein said bias regulator circuit and said varactor are integrated on a common monolithic semiconducting substrate.

Claim 10

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first field-effect transistor (FET) formed in an epitaxial semiconducting layer on said substrate, said transistor comprising a mutually interdigitated source and drain, and a gate interposed between said source and said drain; an input contact connected to a first one of said source and said drain, and an output contact connected to the other one of said source and said drain; a varactor, comprising an anode and a cathode and a portion of an epitaxial semiconducting layer on said substrate intermediate therebetween; and bias voltage regulator means including a current sink connected to provide a bias voltage to one of said anode and said cathode of said varactor, said gate of said first FET being connected to the other one of said anode and said cathode of said varactor.

Claim 11

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first field-effect transistor (FET) formed in an epitaxial semiconducting layer on said substrate, said transistor comprising a mutually interdigitated source and drain, and a gate interposed between said source and said drain; an input contact connected to a first one of said source and said drain, and an output contact connected to the other one of said source and said drain; a varactor, comprising an anode and a cathode and a portion of an epitaxial semiconducting layer on said substrate intermediate therebetween; and bias voltage regulator means including a current sink connected to provide a bias voltage to one of said anode and said cathode of said varactor, said gate of said first FET being connected to the other one of said anode and said cathode of said varactor.

Claim 12

The VCO of claim 9, wherein said substrate comprises chromium-doped gallium arsenide.

Claim 13

The VCO of claim 9, further comprising a capacitor including first and second metal plates and a dielectric therebetween, said first plate of said capacitor being connected to said other one of said anode and said cathode of said varactor, and said second metal plate of said capicator being connected to said drain of said first FET.

Claim 14

The VCO of claim 9, further comprising an inductance interposed between said gate of said first FET and said other one of said anode and said cathode of said varactor.

Claim 15

The VCO of claim 9, wherein the total length of said gate is approximately 300 microns.

Claim 16

The VCO of claim 9, wherein said source and said drain of said first FET define a channel region therebetween within said semiconductor layer, and wherein said gate of said first FET forms a Schottky barrier with respect to said channel region.

Claim 17

The VCO of claim 9, wherein no pathway for DC return exists between said gate and said source nor between said gate and said drain.

Claim 18

The VCO of claim 9, wherein said bias voltage means comprises a source-follower circuit including a second FET formed in an epitaxial semiconducting layer on said substrate.

Claim 19

The VCO of claim 16, wherein said second FET has a gate width at least one half that of said first FET.

Claim 20

The VCO of claim 9, wherein said varactor comprises an anode and a cathode formed on said semiconductor layer, said anode and cathode being co-adjacent and spaced apart from each other, said anode forming a Schottky barrier with said semiconductor layer, the portion of said semiconductor layer beneath said anode being sufficiently thin and sufficiently lightly doped that punch through between said anode and said substrate occurs at a lower voltage than does breakdown between said anode and said cathode.

Claim 21

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first bipolar transistor formed in an epitaxial semiconducting layer on said substrate, said transistor comprising an emitter, a collector, and a base interposed between said emitter and said collector; an input contact connected to a first one of said emitter and said collector, and an output contact connected to the other one of said emitter and said collector; a varactor, comprising an anode and a cathode and a portion of an epitaxial semiconducting layer on said substrate intermediate therebetween; and bias voltage regulator means including a current sink connected to provide a bias voltage to one of said anode and said cathode of said varactor, said base of said first transistor being connected to the other one of said anode and said cathode of said varactor.

Claim 22

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first bipolar transistor formed in an epitaxial semiconducting layer on said substrate, said transistor comprising an emitter, a collector, and a base interposed between said emitter and said collector; an input contact connected to a first one of said emitter and said collector, and an output contact connected to the other one of said emitter and said collector; a varactor, comprising an anode and a cathode and a portion of an epitaxial semiconducting layer on said substrate intermediate therebetween; and bias voltage regulator means including a current sink connected to provide a bias voltage to one of said anode and said cathode of said varactor, said base of said first transistor being connected to the other one of said anode and said cathode of said varactor.

Claim 23

The VCO of claim 19, wherein said bias voltage means comprises an emitter-follower circuit including a second bipolar transistor formed in an epitaxial semiconducting layer on said substrate.

Claim 24

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first field-effect transistor (FET) formed on said substrate, said transistor comprising a mutually interdigitated source and drain, and a gate interposed between said source and said drain; an input contact connected to a first one of said source and said drain, and an output contact connected to the other one of said source and said drain; a varactor on said substrate, comprising an anode and a cathode; and bias voltage regulator means including a current sink connected to provide a bias voltage to one of said anode and said cathode of said varactor, said gate of said first FET being connected to the other one of said anode and said cathode of said varactor.

Claim 25

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first field-effect transistor (FET) formed on said substrate, said transistor comprising a mutually interdigitated source and drain, and a gate interposed between said source and said drain; an input contact connected to a first one of said source and said drain, and an output contact connected to the other one of said source and said drain; a varactor on said substrate, comprising an anode and a cathode; and bias voltage regulator means including a current sink connected to provide a bias voltage to one of said anode and said cathode of said varactor, said gate of said first FET being connected to the other one of said anode and said cathode of said varactor.

Claim 26

The VCO of claim 21, further comprising a capacitor including first and second metal plates and a dielectric therebetween, said first plate of said capacitor being connected to said other one of said anode and said cathode of said varactor, and said second metal plate of said capacitor being connected to said drain of said first FET.

Claim 27

The VCO of claim 21, further comprising an inductance interposed between said gate of said first FET and said other one of said anode and said cathode of said varactor.

Claim 28

The VCO of claim 21, wherein the total length of said gate is approximately 300 microns.

Claim 29

The VCO of Claim 21, wherein said source and said drain of said first FET define a channel region therebetween within said semiconductor layer, and wherein said gate of said first FET forms a Schottky barrier with the respect to said channel region.

Claim 30

The VCO of claim 21, wherein no pathway for DC return exists between said gate and said source nor between said gate and said drain.

Claim 31

The VCO of claim 21, wherein said bias voltage means comprises a source-follower circuit including a second FET formed on said substrate.

Claim 32

The VCO of claim 27, wherein said second FET has a gate width at least one half that of said first FET.

Claim 33

The VCO of claim 21, wherein said varactor comprises an anode and a cathode formed on said semiconductor layer, said anode and cathode being coadjacent and spaced apart from each other, said anode forming a Schottky barrier with said semiconductor layer, the portion of said semiconductor layer beneath said anode being sufficiently thin and sufficiently lightly doped that punch through between said anode and said substrate occurs at a lower voltage than does breakdown between said anode and said cathode.

Claim 34

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first field-effect transistor (FET) formed on said substrate, said transistor comprising a mutually interdigitated source and drain, and a gate interposed between said source and said drain; an input contact connected to a first one of said source and said drain, and an output contact connected to the other one of said source and said drain; a varactor on said substrate, comprising an anode and a cathode; and a bias voltage regulator, connected to provide a bias voltage to one of said anode and said cathode of said varactor, comprising a source-follower circuit including a second FET formed on said substrate, said second FET having a gate width at least one half that of said first FET; said gate of said first FET being connected to the other one of said anode and said cathode of said varactor.

Claim 35

A monolithic microwave voltage-controlled oscillator (VCO), comprising: a monocrystalline substrate; a first field-effect transistor (FET) formed on said substrate, said transistor comprising a mutually interdigitated source and drain, and a gate interposed between said source and said drain; an input contact connected to a first one of said source and said drain, and an output contact connected to the other one of said source and said drain; a varactor on said substrate, comprising an anode and a cathode; and a bias voltage regulator, connected to provide a bias voltage to one of said anode and said cathode of said varactor, comprising a source-follower circuit including a second FET formed on said substrate, said second FET having a gate width at least one half that of said first FET; said gate of said first FET being connected to the other one of said anode and said cathode of said varactor.