US4458215A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic voltage controlled oscillator
Assignee: RCA Corp
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Filing: 1981-08-17
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Granted: 1984-07-03
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Expires: 2001-08-17
Abstract
Abstract A monolithic voltage controlled oscillator is fabricated on a single semiconductor body. The oscillator includes an FET and a varactor diode interconnected such that a voltage applied across the varactor modulates the oscillating frequency of the FET output.
Inventors
- 👤 Ho-Chung Huang
- 👤 Daniel D. Mawhinney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:03
CPC Classifications
H; H03; H03B; H03B5/00; H03B5/18; H03B5/1841; H03B5/1847; H03B5/1852; H10; H10D; H10D86/00; H10D86/80; H10W; H10W90/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
131 words
A monolithic voltage controlled oscillator device, comprising: a substrate having an active semiconductor region disposed thereon; said active semiconductor region having source, gate and drain electrodes spaced thereon so as to form an FET; first and second varactor diodes disposed in said active semiconductor region, said diodes being contiguous with the FET drain electrode; a first thin film capactior having first and second electrodes, said first electrode being continguous with said FET gate electrode; a second thin film capacitor having first and second electrodes, said first electrode being contiguous with said FET source electrode; and interconnection means between said first diode and said second electrode of said first capacitor and between said second diode and said second electrode of said second capacitor, such that relatively few noncontiguous interconnection means are utilized.
Claim 2
Dependent Claim
131 words
A monolithic voltage controlled oscillator device, comprising: a substrate having an active semiconductor region disposed thereon; said active semiconductor region having source, gate and drain electrodes spaced thereon so as to form an FET; first and second varactor diodes disposed in said active semiconductor region, said diodes being contiguous with the FET drain electrode; a first thin film capactior having first and second electrodes, said first electrode being continguous with said FET gate electrode; a second thin film capacitor having first and second electrodes, said first electrode being contiguous with said FET source electrode; and interconnection means between said first diode and said second electrode of said first capacitor and between said second diode and said second electrode of said second capacitor, such that relatively few noncontiguous interconnection means are utilized.
Claim 3
Dependent Claim
16 words
A device in accordance with claim 1, wherein each varactor diode incorporates a hyperabrupt PN junction.
Claim 4
Dependent Claim
25 words
A device in accordance with claim 1, wherein the substrate comprises a semi-insulating material; and the active semiconductor region comprises a doped compound semiconductor layer.
Claim 5
Dependent Claim
34 words
A device in accordance with claim 1, wherein the active semiconductor region comprises a doped silicon layer; and the substrate comprises a material selected from the group consisting of high resistivity silicon and sapphire.
Claim 6
Dependent Claim
33 words
A device in accordance with claim 1, wherein the FET further comprises second gate and second drain electrodes disposed in seriatim with said drain, gate and source electrodes on the active semiconductor region.
Claim 7
Dependent Claim
46 words
A device in accordance with claim 5, further comprising: a third varactor diode contiguous with the second drain electrode and interconnected to the first thin film capacitor; and a fourth varactor diode contiguous with the second drain electrode and interconnected to the second thin film capacitor.
Claim 8
Dependent Claim
21 words
A device in accordance with claim 1, wherein the interconnection means between the varactor diode and thin film capacitor comprises wire.
Claim 9
Dependent Claim
23 words
A device in accordance wtih claim 1, wherein the interconnection means between the varactor diode and thin film capacitor comprises an air bridge.
Claim 10
Dependent Claim
22 words
A device in accordance with claim 1, wherein the interconnection means between the varactor diode and thin film capacitor comprises a crossover.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-03 | 1988-01-02 | 1988-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-03 | 1992-01-02 | 1992-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-03 | 1996-01-02 | 1996-07-03 | $7700.00 | Window Closed / Lapsed |