Peak level indicator

Claim 2

A peak level indicator comprising: a. a charge storage semiconductor device including a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, said first region being capacitively coupled to said current path portion, and a control electrode connected to said second region; b. means for applying a current through said current path portion; c. an indicating means for indicating said current through said current path portion; and d. means for applying an input signal to said control electrode.

Claim 3

A peak level indicator according to claim 1, wherein a PN junction is formed between said first region and said semiconductive substrate.

Claim 4

A peak level indicator according to claim 1, wherein said input signal applying means includes a rectifying means.

Claim 5

A peak level indicator according to claim 1, wherein said semiconductor device has a third semiconductive region forming a PN junction with said semiconductive substrate and a current supplying means is connected to said third region.

Claim 6

A peak level indicator according to claim 1, further including another semiconductor device connected to said first region of said charge storage semiconductor device.

Claim 7

A peak level indicator according to claim 5, wherein said semiconductor device is a field effect transistor.

Claim 8

A peak level indicator adapted for utilizing a charge storage semiconductor device in an integrated circuit comprising: a. a charge storage junction semiconductor device having a charge storing PN junction, an input, and an output; b. a rectifying signal input means connected to said charge storage device input; c. current means connected to said output of the charge storage semiconductor device for producing a current which is controlled by said charge storage semiconductor device; and d. indicating means connected to said current means for displaying a current of said current means.

Claim 9

A peak level indicator adapted for utilizing a charge storage semiconductor device in an integrated circuit comprising: a. a charge storage junction semiconductor device having a charge storing PN junction, an input, and an output; b. a rectifying signal input means connected to said charge storage device input; c. current means connected to said output of the charge storage semiconductor device for producing a current which is controlled by said charge storage semiconductor device; and d. indicating means connected to said current means for displaying a current of said current means.

Claim 10

A peak level indicator of claim 7 in which a discharge means connects with said charge storage junction semiconductor device for controlling a rate of discharge of said charge storing PN junction.

Claim 11

A peak level indicator of claim 8 in which said charge storage junction semiconductor device comprises a charge storage field effect transistor having a channel protion, source and drain electrodes connected at opposite ends of said channel portion, and first and second semiconductor regions forming a PN junction, said first region being capacitively coupled to said channel portion and a control electrode attached to said second region, said rectifying signal input means comprising a full wave rectifier connected to said gate electrode, said current means comprising a power source and impedance connected in series between said drain and source electrodes, and said indicating means comprising a meter connected between said drain and source electrodes.

Claim 12

A peak level indicator of claim 9 in which said discharge means comprises a current source connected to a third semiconductor region interfaced with said channel region and forming a PN junction at said interface.

Claim 13

A peak level indicator of claim 9 in which said discharge means comprises a junction field effect transistor having a drain-source current path connected to an electrode in contact with said capacitively coupled first semiconductor region.

Claim 14

A peak level indicator of claim 8 in which said charge storage junction semiconductor device comprises a charge storage diode having first and second semiconductor regions forming a PN junction, said first region being capacitively coupled to a third semiconductor region, an electrode being connected to each of said first and second regions, said rectifying signal input means comprising a full wave rectifier connected to said second region electrode, said current means comprising a field effect transistor having a gate connected to said first region electrode and a drain-source channel portion connected to a power source and impedance in series and said indicating means comprising a meter connected across said drain-source FET portion.

Claim 15

A peak level indicator of claim 12 in which said discharge means comprises a fourth semiconductor region interfaced with said third semiconductor region to form a PN junction therewith and a current source connected to said fourth region.