Patent US3201209A successfully refreshed from Google Patents.
Patent US5055820A successfully refreshed from Google Patents.
US5055820A
Expired / Lapsed
US
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Hall element and magnetic sensor system employing the same
Assignee: Mitsubishi Electric Corp
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Filing: 1990-01-04
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Granted: 1991-10-08
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Expires: 2010-01-04
Abstract
Abstract A Hall device a semiconductor region embedded in a substrate, the embedded region having opposite main and back surfaces and a pair of side surfaces parallel to and spaced apart from respective ones of the main, back and side surfaces of the substrate. A pair of current electrodes are formed of first highly doped regions embedded in the substrate respectively (i) between the main surfaces of the substrate and the semiconductor region and (ii) between the back surfaces of the substrate and semiconductor region so as to sandwich the semiconductor region between the main and back surfaces of the substrate. A pair of Hall voltage detecting electrodes are formed of second highly doped regions embedded in the substrate, respectively between side surfaces of the substrate and semiconductor region. The substrate can be made of SiO 2 to increase electrical isolation between the electrodes.
Inventors
- 👤 Masatoshi Kimura
- 👤 Toshio Kumamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:29
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
158 words
A Hall device comprising: a semiconductor substrate having a main surface, a back surface opposite said main surface and a pair of opposing side surfaces connected to said main and back surfaces, said Hall device comprising: a semiconductor region embedded in said substrate, said semiconductor region having opposite main and back surfaces and a pair of side surfaces parallel to and spaced apart from respective ones of said main, back and side surfaces of said substrate; a pair of current electrodes constituted by first highly doped regions embedded in said substrate respectively between said main surfaces of said substrate and said semiconductor region and between said back surfaces of said substrate and semiconductor region so as to sandwich said semiconductor region between said main and back surfaces of said substrate; and a pair of Hall voltage detecting electrodes constituted by second highly doped regions embedded in said substrate respectively between side surfaces of said substrate and semiconductor region.
Claim 2
Dependent Claim
158 words
A Hall device comprising: a semiconductor substrate having a main surface, a back surface opposite said main surface and a pair of opposing side surfaces connected to said main and back surfaces, said Hall device comprising: a semiconductor region embedded in said substrate, said semiconductor region having opposite main and back surfaces and a pair of side surfaces parallel to and spaced apart from respective ones of said main, back and side surfaces of said substrate; a pair of current electrodes constituted by first highly doped regions embedded in said substrate respectively between said main surfaces of said substrate and said semiconductor region and between said back surfaces of said substrate and semiconductor region so as to sandwich said semiconductor region between said main and back surfaces of said substrate; and a pair of Hall voltage detecting electrodes constituted by second highly doped regions embedded in said substrate respectively between side surfaces of said substrate and semiconductor region.
Claim 3
Dependent Claim
40 words
A Hall device in accordance with the claim 1, wherein said substrate comprises a semiconductor substrate of a certain conductivity type and said semiconductor region comprises a semiconductor region of a conductivity type opposite to that of the semiconductor substrate.
Claim 4
Dependent Claim
15 words
A Hall device in accordance with claim 1, wherein said substrate comprises SiO 2 substrate.
Claim 5
Dependent Claim
141 words
A Hall device comprising: a SiO 2 substrate having a main surface, a back surface opposite said main surface and first and second pairs of opposing side surfaces connected to said main and back surfaces; a semiconductor region embedded in said SiO 2 substrate having first and second pairs of opposing side surfaces parallel to and spaced apart from respective ones of said first and second pairs of side surfaces of said substrate; a pair of current electrodes constituted by first highly doped regions embedded in said SiO 2 substrate respectively between respective first pairs of side surfaces of said substrate and semiconductor region; and a pair of Hall voltage detecting electrodes constituted by second highly doped regions embedded in said SiO 2 substrate on respective opposing surfaces of said semiconductor region other than on which said current electrodes are provided.
Claim 6
Dependent Claim
141 words
A Hall device comprising: a SiO 2 substrate having a main surface, a back surface opposite said main surface and first and second pairs of opposing side surfaces connected to said main and back surfaces; a semiconductor region embedded in said SiO 2 substrate having first and second pairs of opposing side surfaces parallel to and spaced apart from respective ones of said first and second pairs of side surfaces of said substrate; a pair of current electrodes constituted by first highly doped regions embedded in said SiO 2 substrate respectively between respective first pairs of side surfaces of said substrate and semiconductor region; and a pair of Hall voltage detecting electrodes constituted by second highly doped regions embedded in said SiO 2 substrate on respective opposing surfaces of said semiconductor region other than on which said current electrodes are provided.
Claim 7
Dependent Claim
141 words
A Hall device comprising: a first conductivity type semiconductor substrate having a main surface, a back surface opposite said main surface and a pair of opposing side surfaces connected to said main and back surfaces; a semiconductor region provided in said substrate, said semiconductor region having opposite main and back surfaces and a pair of side surfaces parallel to and spaced apart from respective ones of said main, back and side surfaces of said substrate; a pair of current electrodes constituted by first highly doped regions embedded in said substrate respectively between said main surfaces of said substrate and said semiconductor region and between said back surface of said substrate and semiconductor region; and a pair of Hall voltage detecting electrodes constituted by second highly doped regions embedded in said substrate respectively between side surfaces of said substrate and semiconductor region.
Claim 8
Dependent Claim
141 words
A Hall device comprising: a first conductivity type semiconductor substrate having a main surface, a back surface opposite said main surface and a pair of opposing side surfaces connected to said main and back surfaces; a semiconductor region provided in said substrate, said semiconductor region having opposite main and back surfaces and a pair of side surfaces parallel to and spaced apart from respective ones of said main, back and side surfaces of said substrate; a pair of current electrodes constituted by first highly doped regions embedded in said substrate respectively between said main surfaces of said substrate and said semiconductor region and between said back surface of said substrate and semiconductor region; and a pair of Hall voltage detecting electrodes constituted by second highly doped regions embedded in said substrate respectively between side surfaces of said substrate and semiconductor region.
Claim 9
Dependent Claim
41 words
A Hall device in accordance with claim 1, wherein the length of each said Hall voltage detecting electrodes is equal to the length of said semiconductor region in a direction from said main to said back surface of said semiconductor region.
Claim 10
Dependent Claim
23 words
A Hall device in accordance with claim 1, wherein each said Hall voltage detecting electrodes completely covers side surfaces of said semiconductor region.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |