Patent US4146321A successfully refreshed from Google Patents.
US4584552A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hall element with improved composite substrate
Assignee: Pioneer Corp
•
Filing: 1983-03-23
•
Granted: 1986-04-22
•
Expires: 2003-03-23
Abstract
Abstract A magnetoelectric transducer includes a high mobility semiconductor thin film formed on a layer such as an alumina film. Processing to form the device is improved by simultaneous patterning of the semiconductor thin film and an electrode layer. Improved resistance to the effects of heat are obtained by using a highly heat conductive substrate. Integrally with the substrate there may be formed an element such as a series resistor for temperature compensation of the magnetic sensor of the transducer.
Inventors
- 👤 Shinichi Suzuki
- 👤 Masami Mochizuki
- 👤 Takashi Suemitsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:19
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
64 words
A magnetoelectric transducer including a semiconductor material having high mobility, comprising a substrate having a high heat conductivity, an alumina film formed on said substrate, and a semiconductor thin film comprising said high mobility semiconductor material formed on the surface of said alumina film, wherein said substrate is coated with a silicon oxide film, said alumina film being formed on said silicon oxide film.
Claim 2
Dependent Claim
64 words
A magnetoelectric transducer including a semiconductor material having high mobility, comprising a substrate having a high heat conductivity, an alumina film formed on said substrate, and a semiconductor thin film comprising said high mobility semiconductor material formed on the surface of said alumina film, wherein said substrate is coated with a silicon oxide film, said alumina film being formed on said silicon oxide film.
Claim 3
Dependent Claim
66 words
A magnetoelectric transducer comprising; a silicon semiconductor substrate, a silicon oxide film coated on said substrate, an insulating alumina film formed on said silicon oxide film, a magnetic sensor comprising a semiconductor thin film having a high mobility and formed on said insulating alumina film, and a resistive element connected to an input terminal of said magnetic sensor, said resistive element being formed on said substrate.
Claim 4
Dependent Claim
66 words
A magnetoelectric transducer comprising; a silicon semiconductor substrate, a silicon oxide film coated on said substrate, an insulating alumina film formed on said silicon oxide film, a magnetic sensor comprising a semiconductor thin film having a high mobility and formed on said insulating alumina film, and a resistive element connected to an input terminal of said magnetic sensor, said resistive element being formed on said substrate.
Claim 5
Dependent Claim
19 words
A magnetoelectric transducer as claimed in claim 2, said resistive element comprising temperature compensation means for said magnetic sensor.
Claim 6
Dependent Claim
29 words
A magnetoelectric transducer as claimed in claim 2, said magnetic sensor comprising a Hall effect element, and said resistive element comprising temperature compensation means for said Hall effect element.
Claim 7
Dependent Claim
19 words
A magnetoelectric transducer as claimed in claim 2, said resistive element being connected in series with said magnetic sensor.
Claim 8
Dependent Claim
18 words
A magnetoelectric transducer as claimed in claim 2, said resistive element comprising a diffusion region of said substrate.
Claim 9
Dependent Claim
36 words
A magnetoelectric transducer as claimed in claim 2, said resistive element comprising a temperature compensation element for said magnetic sensor and being electrically connected in series therewith, said resistive element comprising a portion of said substrate.
Claim 10
Dependent Claim
18 words
A magnetoelectric transducer as claimed in claim 7, said resistive element comprising a diffusion region of said substrate.
Claim 11
Dependent Claim
54 words
A magnetoelectric transducer, comprising; a silicon semiconductor substrate, an insulating alumina film formed on said silicon semiconductor substrate, a magnetic sensor comprising a semiconductor thin film having a high mobility and formed on said insulating film, and means for temperature compensation of said magnetic sensor, said temperature compensation means being formed on said substrate.
Claim 12
Dependent Claim
54 words
A magnetoelectric transducer, comprising; a silicon semiconductor substrate, an insulating alumina film formed on said silicon semiconductor substrate, a magnetic sensor comprising a semiconductor thin film having a high mobility and formed on said insulating film, and means for temperature compensation of said magnetic sensor, said temperature compensation means being formed on said substrate.
Claim 13
Dependent Claim
16 words
A magnetoelectric transducer as claimed in claim 9, said temperature compensation means comprising a resistive element.
Claim 14
Dependent Claim
17 words
A magnetoelectric transducer as claimed in claim 10, said resistive element comprising a part of said substrate.
Claim 15
Dependent Claim
18 words
A magnetoelectric transducer as claimed in claim 11, said resistive element comprising a diffusion region of said substrate.
Claim 16
Dependent Claim
19 words
A magnetoelectric transducer as claimed in claim 9, said resistive element being connected in series with said magnetic sensor.
Claim 17
Dependent Claim
34 words
A magnetoelectric transducer as claimed in claim 9, said magnetic sensor comprising a Hall effect element, and said temperature compensation means comprising a resistive element formed on said substrate and connected in series therewith.
Claim 18
Dependent Claim
52 words
A magnetoelectric transducer, comprising a substrate of silicon of high heat conductivity and having a polished mirror surface, a layer of silicon oxide coated on said substrate, an alumina layer formed on said layer of silicon oxide, and a semiconductor thin film of high mobility formed on the surface of said alumina.
Claim 19
Dependent Claim
52 words
A magnetoelectric transducer, comprising a substrate of silicon of high heat conductivity and having a polished mirror surface, a layer of silicon oxide coated on said substrate, an alumina layer formed on said layer of silicon oxide, and a semiconductor thin film of high mobility formed on the surface of said alumina.
References Cited (Backward Citations)
US3315205A
Cited
US2855549A
Cited
US3410721A
Cited
US3823354A
Cited
US4128681A
Cited
US4251795A
Cited
DE2844420A1
Cited
JPS55118683A
Cited
US4281357A
Cited
JPS57197884A
Cited
JPS6086A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-21 | 1989-10-21 | 1990-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-21 | 1993-10-21 | 1994-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-21 | 1997-10-21 | 1998-04-22 | $7700.00 | Window Closed / Lapsed |