US4128681A
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Method for producing an InSb thin film element
Assignee: Hitachi Ltd
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Filing: 1976-10-26
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Granted: 1978-12-05
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Expires: 1996-10-26
Abstract
Abstract A method for producing an InSb thin film element comprising the steps of (i) preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming an InSb thin film of a thickness of at most 0.2 μm on the surface of said substrate, (ii) depositing on said InSb thin film a film which is made of an inorganic insulating material containing at least 12 mol % of alumina, (iii) heating said InSb thin film above the melting point of InSb, and (iv) cooling said InSb thin film and recrystallizing InSb. The InSb thin film element thus produced has the InSb thin film whose thickness is at most 0.2 μm, whose surface is flat and which has good electrical characteristics.
Inventors
- 👤 Nobuo Kotera
- 👤 Nobuo Miyamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:06
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/675; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3422; H10P14/38; H10P14/3802; H10P95/00; H10P95/90; H10P95/904; Y; Y10; Y10S; Y10S438/00; Y10S438/902; Y10S438/967; Y10T; Y10T428/00; Y10T428/24; Y10T428/24273; Y10T428/24322; Y10T428/24331; Y10T428/24942; Y10T428/2495; Y10T428/24967; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
90 words
An InSb thin film element comprising a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, an InSb thin film which is provided on the surface of said substrate, which has a thickness of at most 0.2 μm and which has been molten and recrystallized, and a film which is provided on said InSb thin film and which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina.
Claim 2
Dependent Claim
90 words
An InSb thin film element comprising a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, an InSb thin film which is provided on the surface of said substrate, which has a thickness of at most 0.2 μm and which has been molten and recrystallized, and a film which is provided on said InSb thin film and which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina.
Claim 3
Dependent Claim
28 words
The InSb thin film element according to claim 1, wherein the thickness of said InSb thin film lies within a range of from 0.01 μm to 0.2 μm.
Claim 4
Dependent Claim
28 words
The InSb thin film element according to claim 1, wherein the thickness of said InSb thin film lies within a range of from 0.04 μm to 0.1 μm.
Claim 5
Dependent Claim
19 words
The InSb thin film element according to claim 1, wherein said surface of said substrate is made of alumina.
Claim 6
Dependent Claim
22 words
The InSb thin film element according to claim 1, wherein said film provided on said InSb thin film is made of alumina.
Claim 7
Dependent Claim
30 words
The InSb thin film element according to claim 1, wherein said surface of said substrate is made of an inorganic insulating material containing at least 12 mol % of alumina.
Claim 8
Dependent Claim
46 words
The InSb thin film element according to claim 6, wherein said inorganic insulating material containing at least 12 mol % of alumina as forms said surface of said substrate is a member selected from the group consisting of a vitreous material of an oxide and mica.
Claim 9
Dependent Claim
33 words
The InSb thin film element according to claim 1, wherein said film provided on said InSb thin film is made of an inorganic insulating material containing at least 12 mol % of alumina.
Claim 10
Dependent Claim
46 words
The InSb thin film element according to claim 8, wherein said inorganic insulating material containing at least 12 mol % of alumina as provided on said InSb thin film is a member selected from the group consisting of a vitreous material of an oxide and mica.
Claim 11
Dependent Claim
32 words
The InSb thin film element according to claim 1, wherein a thickness of said film provided on said InSb thin film lies within a range of from 0.05 μm to 1 μm.
Claim 12
Dependent Claim
32 words
The InSb thin film element according to claim 10, wherein the thickness of said film provided on said InSb thin film lies within a range of from 0.05 μm to 0.6 μm.
Claim 13
Dependent Claim
25 words
The InSb thin film element according to claim 1, wherein a hard glass film is further provided on said film overlying said InSb thin film.
Claim 14
Dependent Claim
20 words
The InSb thin film element according to claim 12, wherein said hard glass film is made of SiO 2 .
Claim 15
Dependent Claim
52 words
The InSb thin film element according to claim 1, wherein a hole for an electrode, said hole having a predetermined shape and going through said film provided on said InSb thin film to said InSb thin film, is formed at a predetermined position of said film provided on said InSb thin film.
Claim 16
Dependent Claim
30 words
The InSb thin film element according to claim 1, wherein said substrate is made wholly of alumina or an inorganic insulating material containing at least 12 mol % of alumina.
Claim 17
Dependent Claim
49 words
The InSb thin film element according to claim 1, wherein said substrate comprises a substrate material having thereon an insulating layer made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, said insulating layer having a thickness of 0.05 μm to 10 μm.
Claim 18
Dependent Claim
22 words
The InSb thin film element according to claim 1, wherein the InSb thin film has a crystallite size of 0.1 to 10mm.
Claim 19
Independent Claim
118 words
A method for producing an InSb thin film element, comprising (i) the step of preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming on the surface of said substrate an InSb thin film whose thickness is at most 0.2 μm, (ii) the step of depositing on said InSb thin film a film which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, (iii) the step of heating said InSb thin film to above the melting point of InSb, and (iv) the step of cooling said InSb thin film and recrystallizing InSb.
Claim 20
Independent Claim
118 words
A method for producing an InSb thin film element, comprising (i) the step of preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming on the surface of said substrate an InSb thin film whose thickness is at most 0.2 μm, (ii) the step of depositing on said InSb thin film a film which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, (iii) the step of heating said InSb thin film to above the melting point of InSb, and (iv) the step of cooling said InSb thin film and recrystallizing InSb.
Claim 21
Dependent Claim
37 words
The method for producing an InSb thin film element according to claim 1, wherein the thickness of said InSb thin film formed in the step (i) lies within a range of from 0.01 μm to 0.2 μm.
Claim 22
Dependent Claim
37 words
The method for producing an InSb thin film element according to claim 18, wherein the thickness of said InSb thin film formed in the step (i) lies within a range of from 0.04 μm to 0.1 μm.
Claim 23
Dependent Claim
27 words
The method for producing an InSb thin film element according to claim 18, wherein said surface of said substrate in the step (i) is made of alumina.
Claim 24
Dependent Claim
30 words
The method for producing an InSb thin film element according to claim 18, wherein said film deposited on said InSb thin film in the step (ii) is made of alumina.
Claim 25
Dependent Claim
38 words
The method for producing an InSb thin film element according to claim 18, wherein said surface of said substrate in the step (i) is made of an inorganic insulating material containing at least 12 mol % of alumina.
Claim 26
Dependent Claim
54 words
The method for producing an InSb thin film element according to claim 23, wherein said inorganic insulating material containing at least 12 mol % of alumina as forms said surface of said substrate in the step (i) is a member selected from the group consisting of a vitreous material of an oxide and mica.
Claim 27
Dependent Claim
41 words
The method for producing an InSb thin film element according to claim 18, wherein said film deposited on said InSb thin film in the step (ii) is made of an inorganic insulating material containing at least 12 mol % of alumina.
Claim 28
Dependent Claim
54 words
The method for producing an InSb thin film element according to claim 25, wherein said inorganic insulating material containing at least 12 mol % of alumina as deposited on said InSb thin film in the step (ii) is a member selected from the group consisting of a vitreous material of an oxide and mica.
Claim 29
Dependent Claim
40 words
The method for producing an InSb thin film element according to claim 18, wherein a thickness of said film deposited on said InSb thin film in the step (ii) lies within a range of from 0.05 μm to 1 μm.
Claim 30
Dependent Claim
40 words
The method for producing an InSb thin film element according to claim 27, wherein the thickness of said film deposited on said InSb thin film in the step (ii) lies within a range of from 0.05 μm to 0.6 μm.
Claim 31
Dependent Claim
35 words
The method for producing an InSb thin film element according to claim 18, wherein after depositing said film on said InSb thin film in the step (ii), a hard glass film is further deposited thereon.
Claim 32
Dependent Claim
24 words
The method of producing an InSb thin film element according to claim 29, wherein said hard glass film is made of SiO 2 .
Claim 33
Dependent Claim
27 words
The method for producing an InSb thin film element according to claim 18, wherein a heating temperature in the step (iii) is 525° C. to 1,000° C.
Claim 34
Dependent Claim
27 words
The method for producing an InSb thin film element according to claim 18, wherein the step (iii) said InSb thin film is heated by the zone-melting method.
Claim 35
Dependent Claim
32 words
The method for producing an InSb thin film element according to claim 18, wherein after the step (iv), at least a part of said film formed by the step (ii) is removed.
Claim 36
Dependent Claim
77 words
The method of producing an InSb thin film element according to claim 18, wherein said preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina comprises applying an insulating layer of alumina or an inorganic insulating material containing at least 12 mol % of alumina on a substrate material, said insulating layer having a thickness of 0.05 μm to 10 μm.
Claim 37
Dependent Claim
31 words
The method for producing an InSb thin film element according to claim 18, wherein the cooling of the InSb thin film takes place at a maximum cooling rate of 30,000° C./hr.
Claim 38
Dependent Claim
28 words
The method for producing an InSb thin film element according to claim 18, whereby an InSb thin film having a crystallite size of 0.1 to 10mm is achieved.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-04 | 1982-06-05 | 1982-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-04 | 1986-06-05 | 1986-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-04 | 1990-06-05 | 1990-12-05 | $7700.00 | Window Closed / Lapsed |