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Patent US5051598A successfully refreshed from Google Patents.
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US5051598A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for correcting proximity effects in electron beam lithography

Assignee: International Business Machines Corp
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Filing: 1990-09-12
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Granted: 1991-09-24
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Expires: 2010-09-12
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Abstract

Abstract A proximity effect correction method for electron beam lithography suitable for high voltages and/or very dense patterns applies both backscatter and forward scatter dose corrections. Backscatter dose corrections are determined by computing two matrices, a "Proximity Matrix" P and a "Fractional Density Matrix" F. The Proximity Matrix P is computed using known algorithms. The elements of the Fractional Density Matrix are the fractional shape coverage in a mesh of square cells which is superimposed on a pattern of interest. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter dose corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or by polynomial or other interpolation of the dose correction field defined by the D matrix. The D matrix also provides a basis for automatic shape fracturing for optimal proximity correction. Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor b i . These boost factors are computed in a separate and independent step which considers only forward scattering. They are combined with those resulting from the backscatter correction scheme either by simple multiplication to form the final correction factors, or by inputting them to the backscatter correction scheme as numerical weights for each shape.

Inventors

  • 👤 Christopher J. Ashton
  • 👤 Porter D. Gerber
  • 👤 Dieter P. Kern
  • 👤 Walter W. Molzen, Jr.
  • 👤 Stephen A. Rishton
  • 👤 Michael G. Rosenfield
  • 👤 Raman G. Viswanathan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 05:25
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/302; H01J37/3023; H01J37/3026

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 206 words
A backscatter correction method for electron beam lithography suitable for high voltages and small feature sizes and/or very dense patterns so as to make an exposure pattern less sensitive to proximity effects, the exposure pattern consisting of a plurality of shapes, said method comprising the steps of: superimposing on said pattern a mesh of square cells C ij ; computing a proximity matrix P with elements P kl (k=-n, . . . , n; l=-n, . . . , n), where k and l label the surrounding cells such that the term P kl refers to the interaction of cell C ij with cell C i+k ,j+l ; computing a fractional density matrix F, such that cells F ij of matrix F are a fractional shape coverage in cells C ij ; extending the F matrix by adding a rectangular collar of n elements around the F matrix representing empty space surrounding the pattern; computing a dose correction matrix D by convolving the P and F matrices as: ##EQU7## assigning a dose correction d i to each shape as a function of the dose correction matrix; and computing final doses from the dose corrections d i and modifying the exposure pattern according to these final doses.
Claim 2
Dependent Claim 206 words
A backscatter correction method for electron beam lithography suitable for high voltages and small feature sizes and/or very dense patterns so as to make an exposure pattern less sensitive to proximity effects, the exposure pattern consisting of a plurality of shapes, said method comprising the steps of: superimposing on said pattern a mesh of square cells C ij ; computing a proximity matrix P with elements P kl (k=-n, . . . , n; l=-n, . . . , n), where k and l label the surrounding cells such that the term P kl refers to the interaction of cell C ij with cell C i+k ,j+l ; computing a fractional density matrix F, such that cells F ij of matrix F are a fractional shape coverage in cells C ij ; extending the F matrix by adding a rectangular collar of n elements around the F matrix representing empty space surrounding the pattern; computing a dose correction matrix D by convolving the P and F matrices as: ##EQU7## assigning a dose correction d i to each shape as a function of the dose correction matrix; and computing final doses from the dose corrections d i and modifying the exposure pattern according to these final doses.
Claim 3
Dependent Claim 29 words
The method as recited in claim 1 wherein said step of assigning is performed based on area-weighted averages of D matrix elements for all cells spanned by the shape.
Claim 4
Dependent Claim 26 words
The method as recited in claim 1 wherein said step of assigning is performed by interpolation of the dose correction field defined by the D matrix.
Claim 5
Dependent Claim 37 words
The method as recited in claim 1 wherein a final backscatter-corrected dose s i for shape i is given by s.sub.i =1+η+d.sub.i, where where η is the ratio of total backscattered energy to total forward scattered energy.
Claim 6
Dependent Claim 51 words
The method as recited in claim 4 further comprising the steps of: computing a forward scattering correction boost b i separately and independently of any other kind of correction; and multiplying the computed backscatter dose correction s i with the computed forward scattering correction to arrive at said final dose corrections.
Claim 7
Dependent Claim 86 words
The method as recited in claim 1 further comprising the steps of: computing a forward scattering correction boost b i ; using said forward scattering correction boost b i to weight said F matrix, said D matrix being computed with the weighted F matrix to determine said backscatter correction term d i ; and wherein said step of assigning is performed by determining a final dose t i as t.sub.i =(1+η)b.sub.i +d.sub.i, where η is the ratio of total backscattered energy to total forward scattered energy.

References Cited (Backward Citations)

US4099062A Cited
US4264711A Cited
US4426564A Cited
US4426584A Cited
US4504558A Cited
US4644170A Cited
US4520269A Cited
US4498010A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-09-23 1995-03-25 1995-09-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-09-23 1999-03-25 1999-09-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-09-23 2003-03-25 2003-09-24 $7700.00 Window Closed / Lapsed

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