Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
119 words
A method of measuring the proximity effect range in electron beam imaging, said method comprising the steps of: (a) defining in a radiation sensitive layer, by exposing said layer to an electron beam of a predetermined dose, a test pattern consisting of a series of ridges whose widths decrease from one ridge to the next; (b) subjecting said layer to a developing process; (c) prematurely discontinuing the developing process; (d) comparing the mutual symmetry in the profiles of mutually facing edges of adjacent pairs of ridges constituting said series and identifying the narrower ridge of said pairs which first exhibits assymmetry in edge profile; and (e) measuring the width of said narrower ridge, thereby obtaining said proximate effect range.
Claim 2
Independent Claim
119 words
A method of measuring the proximity effect range in electron beam imaging, said method comprising the steps of: (a) defining in a radiation sensitive layer, by exposing said layer to an electron beam of a predetermined dose, a test pattern consisting of a series of ridges whose widths decrease from one ridge to the next; (b) subjecting said layer to a developing process; (c) prematurely discontinuing the developing process; (d) comparing the mutual symmetry in the profiles of mutually facing edges of adjacent pairs of ridges constituting said series and identifying the narrower ridge of said pairs which first exhibits assymmetry in edge profile; and (e) measuring the width of said narrower ridge, thereby obtaining said proximate effect range.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the developing process is prematurely discontinued after approximately 60 to 70% of the full developing time.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said symmetry comparison is effected with photo-optical means.
Claim 5
Dependent Claim
146 words
A photo-optical method of measuring the range of proximate effect in the imaging of patterns using an electron beam projection system, said method comprising: (a) defining in a radiation sensitive layer by exposing selected regions of said layer to an electron beam a plurality of ridges each having a fixed well-defined width, said width of one ridge being different from that of the others; (b) subjecting said layer to a developing process; (c) discontinuing the developing process after approximately 70% to 80% of the full developing time; (d) photomicroscopically comparing the mutual symmetry in the profiles of mutually facing edges of adjacent pairs of ridges in said test pattern and determining the width of the narrower ridge in said pairs which first exhibits deviation in the mutual symmetry of said two mutually facing edges; whereby the range of proximity effect corresponds to said determined ridge width.
Claim 6
Dependent Claim
146 words
A photo-optical method of measuring the range of proximate effect in the imaging of patterns using an electron beam projection system, said method comprising: (a) defining in a radiation sensitive layer by exposing selected regions of said layer to an electron beam a plurality of ridges each having a fixed well-defined width, said width of one ridge being different from that of the others; (b) subjecting said layer to a developing process; (c) discontinuing the developing process after approximately 70% to 80% of the full developing time; (d) photomicroscopically comparing the mutual symmetry in the profiles of mutually facing edges of adjacent pairs of ridges in said test pattern and determining the width of the narrower ridge in said pairs which first exhibits deviation in the mutual symmetry of said two mutually facing edges; whereby the range of proximity effect corresponds to said determined ridge width.
Claim 7
Dependent Claim
164 words
A practical method of determining the proximity effect range in electron beam imaging, said method comprising the steps of: (a) defining in a photoresist layer by selective exposure of said layer to an electron beam a pattern comprising groups of lines having a fixed, well-defined width within each group and of slightly increasing width from group to group said groups being arranged adjacent to each other in the increasing order of line widths; (b) subjecting said layer to a developing process; (c) prematurely terminating the developing process; (d) comparing by scanning electron microscopic examination the mutual symmetry in the profiles of mutually facing edges of the last line in one group and the first line in the next group and identifying between said one group and the next group the group having the narrower lines which first exhibits deviation from said mutual symmetry; and (e) measuring the width of a line in said group of narrower lines and thereby obtaining said proximity effect range.
Claim 8
Dependent Claim
164 words
A practical method of determining the proximity effect range in electron beam imaging, said method comprising the steps of: (a) defining in a photoresist layer by selective exposure of said layer to an electron beam a pattern comprising groups of lines having a fixed, well-defined width within each group and of slightly increasing width from group to group said groups being arranged adjacent to each other in the increasing order of line widths; (b) subjecting said layer to a developing process; (c) prematurely terminating the developing process; (d) comparing by scanning electron microscopic examination the mutual symmetry in the profiles of mutually facing edges of the last line in one group and the first line in the next group and identifying between said one group and the next group the group having the narrower lines which first exhibits deviation from said mutual symmetry; and (e) measuring the width of a line in said group of narrower lines and thereby obtaining said proximity effect range.