US5047822A — Electro-optic quantum well device

Claim 1

Independent Claim 202 words

A semiconductor device for modifying optical transmission comprising: a substrate; a multilayered semiconductor quantum well structure located on said substrate and including a plurality of pairs of quantum well layers of mutually difference widths separated from each other by a respective semiconductor barrier layer; an outer capping layer on said semiconductor structure, said quantum well structure being located intermediate said substrate and capping layer thereby; means for applying an electric potential across said electric field across said quantum well structure which when applied generates an electric field across said quantum well layers and operates to bring the electron sub-band energies of said quantum well layers of different widths into and out of resonance, thereby allowing excitons in the wells to undergo resonant field ionization, wherein electrons tunnel back and forth between said wells causing an alteration of the coefficient of light absorption of wavelengths in the region of the excitonic absorption feature; and means for directing optical energy from and external source to said plurality of pairs of quantum layers substantially parallel to the interfaces between contiguous layers of said semiconductor structure whereby light transmitted through said structure will undergo a phase shift due to resonant field ionization of quantum confined excitons.

Claim 2

Dependent Claim 202 words

A semiconductor device for modifying optical transmission comprising: a substrate; a multilayered semiconductor quantum well structure located on said substrate and including a plurality of pairs of quantum well layers of mutually difference widths separated from each other by a respective semiconductor barrier layer; an outer capping layer on said semiconductor structure, said quantum well structure being located intermediate said substrate and capping layer thereby; means for applying an electric potential across said electric field across said quantum well structure which when applied generates an electric field across said quantum well layers and operates to bring the electron sub-band energies of said quantum well layers of different widths into and out of resonance, thereby allowing excitons in the wells to undergo resonant field ionization, wherein electrons tunnel back and forth between said wells causing an alteration of the coefficient of light absorption of wavelengths in the region of the excitonic absorption feature; and means for directing optical energy from and external source to said plurality of pairs of quantum layers substantially parallel to the interfaces between contiguous layers of said semiconductor structure whereby light transmitted through said structure will undergo a phase shift due to resonant field ionization of quantum confined excitons.

Claim 3

Dependent Claim 28 words

The device as defined by claim 1 wherein said means for applying said electric potential includes means for applying a phase shifting control signal across said semiconductor structure.

Claim 4

Dependent Claim 20 words

The device as defined by claim 1 wherein said semiconductor structure comprises an array of discrete portions of said structure.

Claim 5

Dependent Claim 34 words

The device as defined by claim 3 wherein said array comprises a one dimensional array including a plurality of like elongated portions of said semiconductor structure arranged in substantially parallel relationship on said substrate.

Claim 6

Dependent Claim 187 words

A semiconductor device for modifying optical transmission comprising: a substrate, including at least one opening therein for providing an exit window for the passage of light energy out of said device; a multilayered semiconductor quantum well structure located on said substrate and including a plurality of pairs of quantum well layers of mutually different widths separated from each other by a respective semiconductor barrier layer; a light transmissive outer capping layer on said semiconductor structure, said quantum well structure being located intermediate said substrate and capping layer thereby; means for directing light perpendicular to the interfaces of contiguous layers of said semiconductor structure; and means for applying an electric potential across said quantum well structure which when applied generates an electric field across said quantum well layers and operates to bring the electron sub-band energies of said quantum well layers of different widths into and out of resonance, thereby allowing excitons in the wells to undergo resonant field ionization, wherein electrons tunnel back and forth between said wells causing an alteration of the coefficient of light absorption for wavelengths in the region of the excitonic absorption feature.

Claim 7

Dependent Claim 187 words

A semiconductor device for modifying optical transmission comprising: a substrate, including at least one opening therein for providing an exit window for the passage of light energy out of said device; a multilayered semiconductor quantum well structure located on said substrate and including a plurality of pairs of quantum well layers of mutually different widths separated from each other by a respective semiconductor barrier layer; a light transmissive outer capping layer on said semiconductor structure, said quantum well structure being located intermediate said substrate and capping layer thereby; means for directing light perpendicular to the interfaces of contiguous layers of said semiconductor structure; and means for applying an electric potential across said quantum well structure which when applied generates an electric field across said quantum well layers and operates to bring the electron sub-band energies of said quantum well layers of different widths into and out of resonance, thereby allowing excitons in the wells to undergo resonant field ionization, wherein electrons tunnel back and forth between said wells causing an alteration of the coefficient of light absorption for wavelengths in the region of the excitonic absorption feature.

Claim 8

Dependent Claim 30 words

The device as defined by claim 5 wherein said means for applying electric potential include means for applying a modulating signal whereby the light leaving said device is intensity modulated.

Claim 9

Dependent Claim 29 words

The device as defined by claim 5 wherein said substrate includes a plurality of openings therein and providing thereby a plurality of exit windows for light leaving said device.

Claim 10

Dependent Claim 20 words

The device as defined by claim 7 wherein said plurality of exit windows are arranged in a two dimensional array.

Claim 11

Dependent Claim 74 words

The device as defined by claim 8 and wherein said means for applying electric potential includes means for applying a separate modulating potential across regions of said quantum well structure adjacent each exit window of said two dimensional array, providing thereby independently addressable elements whereby an incident plane wave impinging on said device experiences a modulation at a given location of said array depending on the external electric field applied at a particular region.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1994-09-09	1995-03-11	1995-09-10	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1998-09-09	1999-03-11	1999-09-10	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2002-09-09	2003-03-11	2003-09-10	$7700.00	Window Closed / Lapsed

Electro-optic quantum well device

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