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US5047661A Expired / Lapsed US ⏱️ 0.0 years remaining

Superlattice precision voltage reference

Assignee: Honeywell Inc
•
Filing: 1990-01-16
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Granted: 1991-09-10
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Expires: 2010-01-16
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Abstract

Abstract A precision voltage reference incorporating at least one superlattice resonant tunneling diode and support electronics. The precision voltage reference is stable as to temperature and radiation.

Inventors

  • 👤 Dale P. Berndt
  • 👤 Andrzej Peczalski

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 23:51
CPC Classifications
B; B82; B82Y; B82Y10/00; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; H; H10; H10D; H10D8/00; H10D8/70; H10D8/755; Y; Y10; Y10S; Y10S257/00; Y10S257/906

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 71 words
A superlattice precision voltage reference comprising: a first superlattice resonant tunneling diode having a peak current flow at a specific voltage. a second superlattice resonant tunneling diode having a peak current flow at a specific voltage; and support electronics means, connected to said first and second resonant tunneling diodes, for tracking the peak current flows of said first and second resonant tunneling diodes and for providing a precision voltage reference output.
Claim 2
Dependent Claim 71 words
A superlattice precision voltage reference comprising: a first superlattice resonant tunneling diode having a peak current flow at a specific voltage. a second superlattice resonant tunneling diode having a peak current flow at a specific voltage; and support electronics means, connected to said first and second resonant tunneling diodes, for tracking the peak current flows of said first and second resonant tunneling diodes and for providing a precision voltage reference output.
Claim 3
Dependent Claim 81 words
Device of claim 1 wherein each of said first and second tunneling diodes comprises: a host semi-insulating substrate; a first layer of doped semiconductor material forming an ohmic contact, on said host semi-insulating substrate; a superlattice structure comprising a double barrier system having a layer of smaller band-gap material sandwiched between two layers of larger band-gap material, on said first layer of doped semiconductor material; and a second layer of doped semiconductor material forming an ohmic contact, on said superlattice structure.
Claim 4
Dependent Claim 32 words
Device of claim 2 wherein each of said first and second tunneling diodes comprises a superlattice neutral region layer placed between said first layer of doped semiconductor material and said superlattice structure.
Claim 5
Dependent Claim 130 words
Device of claim 3 wherein said support electronics means comprises: a first current monitor connected to said first resonant tunneling diode; a first amplifier connected to said first current monitor; a first phase detector connected to said first amplifier; a first integrator connected to said first phase detector and to said first current monitor: a second current monitor connected to said second resonant tunneling diode; a second amplifier connected to said second current monitor; a second phase detector connected to said second amplifier; a second integrator connected to said second phase detector and to said second current monitor; a frequency source connected to said first and second phase detectors; and an amplifier and integrator, connected to said first and second resonant tunneling diodes, for providing the precision voltage reference output.

References Cited (Backward Citations)

US2709780A Cited
US4785230A Cited
US4905056A Cited
US4948989A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-09-09 1995-03-11 1995-09-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-09-09 1999-03-11 1999-09-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-09-09 2003-03-11 2003-09-10 $7700.00 Window Closed / Lapsed

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