US4905056A
Expired / Lapsed
US
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Superlattice precision voltage reference
Assignee: Honeywell Inc
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Filing: 1988-09-30
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Granted: 1990-02-27
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Expires: 2008-09-30
Abstract
Abstract A precision voltage reference incorporating at least one superlattice resonant tunneling diode and support electronics. The precision voltage reference is stable as to temperature and radiation.
Inventors
- 👤 Dale F. Berndt
- 👤 Andrzej Peczalski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 02:35
CPC Classifications
B; B82; B82Y; B82Y10/00; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; H; H10; H10D; H10D8/00; H10D8/70; H10D8/755; Y; Y10; Y10S; Y10S257/00; Y10S257/906
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
73 words
A superlattice precision voltage reference comprising: a host semi-insulating substrate; a first layer of doped semiconductor material forming an ohmic contract, on said host semi-insulating substrate; a superlattice structure comprising a double barrier system having a layer of smaller band-gap material sandwiched between two layers of larger band-gap material, on said first layer of doped semiconductor material; and a second layer of doped semiconductor material forming an ohmic contract on said superlattice structure.
Claim 2
Dependent Claim
73 words
A superlattice precision voltage reference comprising: a host semi-insulating substrate; a first layer of doped semiconductor material forming an ohmic contract, on said host semi-insulating substrate; a superlattice structure comprising a double barrier system having a layer of smaller band-gap material sandwiched between two layers of larger band-gap material, on said first layer of doped semiconductor material; and a second layer of doped semiconductor material forming an ohmic contract on said superlattice structure.
Claim 3
Dependent Claim
13 words
Device of claim 1 wherein said structure is grown by an epitaxial method.
Claim 4
Dependent Claim
13 words
Device of claim 2 wherein said epitaxial method is molecular beam epitaxy (MBE).
Claim 5
Dependent Claim
15 words
Device of claim 2 wherein said epitaxial method is metal organic chemical vapor deposition (MOCVD).
Claim 6
Dependent Claim
27 words
Device of claim 1 wherein said first and second layers of doped semiconductor material comprise smaller band-gap material in contrast to the materials in said superlattice structure.
Claim 7
Dependent Claim
12 words
Device of claim 5 wherein said superlattice structure comprises a quantum well.
Claim 8
Dependent Claim
12 words
Device of claim 6 wherein said superlattice structure is resonant tunneling diode.
Claim 9
Dependent Claim
24 words
Device of claim 7 further comprising a superlattice neutral region layer placed between said first layer of doped semiconductor material and said superlattice structure.
Claim 10
Dependent Claim
19 words
Device of claim 8 wherein each of the layers of said superlattice structure is less than 100 angstroms thick.
Claim 11
Dependent Claim
45 words
Device of claim 9 wherein width the quantum well is small enough so as to cause formation of at least one discrete energy level within the quantum well, above the conduction band energy of the second layer of doped semiconductor material which is a cathode.
Claim 12
Dependent Claim
24 words
Device of claim 10 wherein said superlattice structure is designed so as to have a well-defined resonant peak current flow at a specific voltage.
Claim 13
Dependent Claim
45 words
Device of claim 11 wherein the current flow in said device attains a maximum when the at least one discrete energy level is equal to the conduction band energy of the second layer of doped semiconductor material, thereby indicating resonance of the resonant tunneling diode.
Claim 14
Dependent Claim
53 words
Device of claim 12 wherein: said host substrate is semi-insulating GaAs; said first layer forming an ohmic contact is n+GaAs; said superlattice structure comprises a double barrier system having a layer of GaAs sandwiched between two layers of Al x Ga 1-x As; and said second layer forming an ohmic contact is n+GaAs.
Claim 15
Dependent Claim
19 words
Device of claim 13 wherein each of the layers of said superlattice structure is less than 50 angstroms thick.
Claim 16
Dependent Claim
15 words
Device of claim 13 wherein said superlattice neutral region is Al y Ga 1-y As.
Claim 17
Dependent Claim
57 words
Device of claim 12 wherein: said first layer forming a ohmic contact is n+Al y Ga 1-y As; said superlattice structure comprises a double barrier system having a layer of GaAs sandwiched between two layers of A x Ga 1-x As; said second layer forming an ohmic contact is n+GaAs; and said superlattice neutral region is GaAs.
Claim 18
Dependent Claim
37 words
Device of claim 12 wherein said superlattice structure comprises a double barrier system having a layer of GaAs sandwiched between a layer of In x Ga 1-x As and a layer of In y Al 1-y As.
Claim 19
Dependent Claim
37 words
Device of claim 12 wherein said superlattice structure comprises a double barrier system having a layer of GaAs sandwiched between a layer of In x Ga 1-x As and a layer of Al y Ga 1-y As.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |