US5047661A
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Superlattice precision voltage reference
Assignee: Honeywell Inc
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Filing: 1990-01-16
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Granted: 1991-09-10
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Expires: 2010-01-16
Abstract
Abstract A precision voltage reference incorporating at least one superlattice resonant tunneling diode and support electronics. The precision voltage reference is stable as to temperature and radiation.
Inventors
- 👤 Dale P. Berndt
- 👤 Andrzej Peczalski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:52
CPC Classifications
B; B82; B82Y; B82Y10/00; G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; H; H10; H10D; H10D8/00; H10D8/70; H10D8/755; Y; Y10; Y10S; Y10S257/00; Y10S257/906
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
71 words
A superlattice precision voltage reference comprising: a first superlattice resonant tunneling diode having a peak current flow at a specific voltage. a second superlattice resonant tunneling diode having a peak current flow at a specific voltage; and support electronics means, connected to said first and second resonant tunneling diodes, for tracking the peak current flows of said first and second resonant tunneling diodes and for providing a precision voltage reference output.
Claim 2
Dependent Claim
71 words
A superlattice precision voltage reference comprising: a first superlattice resonant tunneling diode having a peak current flow at a specific voltage. a second superlattice resonant tunneling diode having a peak current flow at a specific voltage; and support electronics means, connected to said first and second resonant tunneling diodes, for tracking the peak current flows of said first and second resonant tunneling diodes and for providing a precision voltage reference output.
Claim 3
Dependent Claim
81 words
Device of claim 1 wherein each of said first and second tunneling diodes comprises: a host semi-insulating substrate; a first layer of doped semiconductor material forming an ohmic contact, on said host semi-insulating substrate; a superlattice structure comprising a double barrier system having a layer of smaller band-gap material sandwiched between two layers of larger band-gap material, on said first layer of doped semiconductor material; and a second layer of doped semiconductor material forming an ohmic contact, on said superlattice structure.
Claim 4
Dependent Claim
32 words
Device of claim 2 wherein each of said first and second tunneling diodes comprises a superlattice neutral region layer placed between said first layer of doped semiconductor material and said superlattice structure.
Claim 5
Dependent Claim
130 words
Device of claim 3 wherein said support electronics means comprises: a first current monitor connected to said first resonant tunneling diode; a first amplifier connected to said first current monitor; a first phase detector connected to said first amplifier; a first integrator connected to said first phase detector and to said first current monitor: a second current monitor connected to said second resonant tunneling diode; a second amplifier connected to said second current monitor; a second phase detector connected to said second amplifier; a second integrator connected to said second phase detector and to said second current monitor; a frequency source connected to said first and second phase detectors; and an amplifier and integrator, connected to said first and second resonant tunneling diodes, for providing the precision voltage reference output.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-09 | 1995-03-11 | 1995-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-09 | 1999-03-11 | 1999-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-09 | 2003-03-11 | 2003-09-10 | $7700.00 | Window Closed / Lapsed |