US5047647A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron beam lithography apparatus
Assignee: Hitachi Instruments Engineering Co Ltd
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Filing: 1990-09-14
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Granted: 1991-09-10
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Expires: 2010-09-14
Abstract
Abstract An electron beam lithography apparatus comprising an electron lens, a deflector, a reflective electron detector of marks on a stage or a specimen thereon when the deflector scans the marks, and a means for memorizing high order polynomial equations and calculating a correcting value of the deflector controlling means based on the high order polynomial equations, wherein all coefficients of the high order polynomial equation are calculated when the electron beam lithography apparatus starts up, and after then, coefficient of the first order term is calculated from the position signals of the marks frequently in a short cycle.
Inventors
- 👤 Hiroyuki Itoh
- 👤 Kenichi Hirane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:35
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/304
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
An electron beam lithography apparatus comprising: an electron lens for focusing an electron beam on to a specimen; a means for controlling current of the electron lens; a deflector for deflecting the electron beam; a means for controlling the deflector; a detector for detecting a reflective electron from marks relating the specimen when the deflector deflects the electron beam so as to scan the marks; a signal processing circuit for obtaining position signals of the marks by processing an output of the detector; and a means for memorizing high order polynomial equation and calculating a correcting value of the deflector controlling means based on the high order polynomial equations, wherein coefficient of the first order term is calculated from the position signals of the marks in a short cycle and other coefficients of the high order polynomial equation are calculated from the position signals in a longer cycle than said short cycle.
Claim 2
Dependent Claim
152 words
An electron beam lithography apparatus comprising: an electron lens for focusing an electron beam on to a specimen; a means for controlling current of the electron lens; a deflector for deflecting the electron beam; a means for controlling the deflector; a detector for detecting a reflective electron from marks relating the specimen when the deflector deflects the electron beam so as to scan the marks; a signal processing circuit for obtaining position signals of the marks by processing an output of the detector; and a means for memorizing high order polynomial equation and calculating a correcting value of the deflector controlling means based on the high order polynomial equations, wherein coefficient of the first order term is calculated from the position signals of the marks in a short cycle and other coefficients of the high order polynomial equation are calculated from the position signals in a longer cycle than said short cycle.
Claim 3
Dependent Claim
36 words
An electron beam lithography apparatus as defined in claim 1, further characterized by, the means for memorizing the high order polynominal equations consisting of first, second and third order terms of position variables of the marks.
Claim 4
Dependent Claim
53 words
An electron beam lithography apparatus as defined in claim 1, further characterized by, the means for calculating the correcting value of the deflector based on the high order polynomial equations, wherein coefficient of the first order term is calculated from the position signals of four marks in the corner of the scanning field.
Claim 5
Dependent Claim
49 words
An electron beam lithography apparatus as defined in claim 1, further characterized by, the means for calculating the correcting value of the deflector based on the high order polynomial equations, wherein other coefficients of the high order polynomial equation are calculated when the electron beam lithography apparatus starts up.
Claim 6
Dependent Claim
49 words
An electron beam lithography apparatus as defined in claim 1, further characterized by, the means for calculating the correcting value of the deflector based on the high order polynomial equations, wherein coefficient of the first order term is calculated by detecting a temperature around the electron beam lithography apparatus.
Claim 7
Dependent Claim
50 words
An electron beam lithography apparatus as defined in claim 1, further characterized by, the means for calculating the correcting value of the deflector based on the high order polynomial equations, wherein coefficient of the first order term is calculated by detecting an atmospheric pressure around the electron beam lithography apparatus.
Claim 8
Dependent Claim
153 words
An electron beam lithography apparatus comprising: an electron lens for focusing an electron beam on to a specimen; a means for controlling current of the electron lens; a deflector for deflecting the electron beam; a means for controlling the deflector; a detector for detecting a reflective electron from marks relating the specimen when the the deflector deflects the electron beam so as to scan the marks; a signal processing circuit for obtaining position signals of the marks by processing an output of the detector; and a means for memorizing high order polynomial equations and calculating a correcting value of the deflector controlling means based on the high order polynomial equations, wherein coefficient of the first order term is calculated from the position signals of the marks in a short cycle and all coefficients of the high order polynomial equation are calculated from the position signals in a longer cycle than said short cycle.
Claim 9
Dependent Claim
153 words
An electron beam lithography apparatus comprising: an electron lens for focusing an electron beam on to a specimen; a means for controlling current of the electron lens; a deflector for deflecting the electron beam; a means for controlling the deflector; a detector for detecting a reflective electron from marks relating the specimen when the the deflector deflects the electron beam so as to scan the marks; a signal processing circuit for obtaining position signals of the marks by processing an output of the detector; and a means for memorizing high order polynomial equations and calculating a correcting value of the deflector controlling means based on the high order polynomial equations, wherein coefficient of the first order term is calculated from the position signals of the marks in a short cycle and all coefficients of the high order polynomial equation are calculated from the position signals in a longer cycle than said short cycle.
Claim 10
Dependent Claim
49 words
An electron beam lithography apparatus as defined in claim 7, further characterized by, the means for calculating the correcting value of the deflector based on the higher order polynomial equations, wherein all coefficients of the high order polynomial equation are calculated when the electron beam lithography apparatus starts up.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-09 | 1995-03-11 | 1995-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-09 | 1999-03-11 | 1999-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-09 | 2003-03-11 | 2003-09-10 | $7700.00 | Window Closed / Lapsed |