US4511980A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron beam exposure apparatus
Assignee: SHIBAURA DENKI A CORP OF JAPAN KK
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Filing: 1982-06-16
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Granted: 1985-04-16
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Expires: 2002-06-16
Abstract
Abstract Dot pattern data stored in the first dot pattern memory is read out by a predetermined number of successive bits at a time under the control of a microprocessor and corrected with respect to an X direction. The corrected dot pattern data is temporarily stored in a main memory. The dot pattern data stored in the main memory is then corrected with respect to a Y direction. The resultant corrected dot pattern data is stored in a second dot pattern memory for use for electron beam blanking control.
Inventors
- 👤 Susumu Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:45
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; B; B82; B82Y; B82Y10/00; B82Y40/00; H01J37/302; H01J37/3023; H01J37/3026; H01J2237/00; H01J2237/30; H01J2237/304; H01J2237/30455; H01J2237/30461; H01J2237/30472; H01J2237/30483; H01J2237/30488; H01J2237/317; H01J2237/3175; H01J2237/31761; H01J2237/31762; H01J2237/31769
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
127 words
An electron beam exposure apparatus, comprising: a buffer memory for temporarily storing input pattern data, a function generator responsive to said buffer memory for converting the pattern data stored in said buffer memory into corresponding dot pattern data according to a predetermined function, first memory means for storing dot pattern data obtained from said function generator, means for correcting an error occurring in an individual dot in the dot pattern data obtained from said function generator and stored in said first memory means so as to obtain corrected dot pattern data, second memory means for storing the corrected dot pattern data, and means for directing an electron beam modulated according to the corrected dot pattern data read out from said second memory means to an exposure medium.
Claim 2
Dependent Claim
127 words
An electron beam exposure apparatus, comprising: a buffer memory for temporarily storing input pattern data, a function generator responsive to said buffer memory for converting the pattern data stored in said buffer memory into corresponding dot pattern data according to a predetermined function, first memory means for storing dot pattern data obtained from said function generator, means for correcting an error occurring in an individual dot in the dot pattern data obtained from said function generator and stored in said first memory means so as to obtain corrected dot pattern data, second memory means for storing the corrected dot pattern data, and means for directing an electron beam modulated according to the corrected dot pattern data read out from said second memory means to an exposure medium.
Claim 3
Dependent Claim
18 words
The electron beam exposure apparatus according to claim 1, wherein said dot pattern correcting means includes a microprocessor.
Claim 4
Dependent Claim
56 words
The electron beam exposure apparatus according to claim 2, wherein said dot pattern correcting means is controlled by said microprocessor and includes a register for storing dot pattern data consisting of a predetermined number of successive bits read out from said first memory means an a main memory for temporarily storing the corrected dot pattern data.
Claim 5
Dependent Claim
110 words
The electron beam exposure apparatus according to claim 2, wherein said dot pattern correcting means includes: a register in which the pattern data, read out from the first memory means and corrected with respect to an X direction, is stored a predetermined number of successive bits at a time under control of said microprocessor; and a main memory for temporarily storing the corrected dot pattern data, said dot pattern data stored in the main memory being corrected with respect to a Y direction under control of said microprocessor, with the resultant corrected dot pattern data being stored in said second memory means for use by an electron beam blanking control.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-15 | 1988-10-15 | 1989-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-15 | 1992-10-15 | 1993-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-15 | 1996-10-15 | 1997-04-16 | $7700.00 | Window Closed / Lapsed |