Compound semiconductor light emitting device

Claim 2

A compound semiconductor light emitting device comprising at least: strained-layer superlattices formed on a substrate, the strained-layer superlattices each being comprised of a plurality of first compound semiconductor layers and a plurality of second compound semiconductor layers, the strained-layer superlattices each being formed by alternately laminating one of the plurality of first compound semiconductor layers with one of the plurality of second compound semiconductor layers, each of the plurality of first compound semiconductor layers being comprised of a II-IV compound semiconductor epitaxial layer, and each of the plurality of second compound semiconductor layers being comprised of a compound semiconductor epitaxial layer selected from a group consisting of II-VI compound semiconductors epitaxial layers and III-V compound semiconductor epitaxial layers and having a different composition from that of said plurality of first compound semiconductor layers the plurality of second compound semiconductor layers each having a smaller lattice constant than that of the plurality of first compound semiconductor layers, a degree of lattice mismatch between each of the plurality of first compound semiconductor layers and adjacent ones of the plurality of second compound semiconductor layers being not more than 20%; a first conductivity type impurity diffusion region formed in at least each of said plurality of first compound semiconductor layers of the strained-layer superlattice, extending into the strained-layer superlattice from a first end side surface of the first conductivity type impurity diffusion region; a second conductivity type region having an opposite conductivity type to said first conductivity type and so formed as to be adjacent to said first conductivity type impurity diffusion region, said second conductivity type region having a second end side surface furthest from the first conductivity type impurity diffusion region; and electrodes provided on the first and second end side surfaces respectively of said first conductivity type impurity diffusion region and said second conductivity type region.

Claim 3

A compound semiconductor light emitting device according to claim 1, wherein said degree of lattice-mismatch is 1 to 9%.

Claim 4

A compound semiconductor light emitting device according to claim 1, wherein a thickness of each of said plurality of first compound semiconductor layers is not more than 40 Å, and a thickness of each of said plurality of second compound semiconductor layers is larger than the thickness of each of said plurality of first compound semiconductor layers by not less than 60 Å.

Claim 5

A semiconductor compound light emitting device according to claim 3, wherein a difference in thickness between each of said plurality of first compound semiconductor layers and each of said plurality of second compound semiconductor layers is 100 to 500Å.

Claim 6

A compound semiconductor light emitting device according to claim 1, wherein said second compound semiconductor layers are II-VI compound semiconductor epitaxial layers having a different composition from said first compound semiconductor layers.

Claim 7

A compound semiconductor light emitting device according to claim 1, wherein said second compound semiconductor layers are III-V compound semiconductor epitaxial layers.

Claim 8

A compound semiconductor light emitting device according to claim 6, wherein said III-compound semiconductor epitaxial layer is comprised of at least one element of the III group selected from the group consisting of gallium, indium and aluminum and at least one element of the V group selected from the group consisting of arsenic and phosphorus.

Claim 9

A compound semiconductor light emitting device according to claim 1, wherein each of said electrodes provided on the first and second end side surfaces, respectively of said first conducting type impurity diffusion region and said second conduction type region is comprised of a III-V compound with the corresponding type of impurities diffused therein, and a metal terminal electrode is further provided on each of said electrodes in ohmic contact therewith as a lead-in electrode.

Claim 10

A compound semiconductor light emitting device according to claim 8, wherein each of said electrodes comprised of said III-V compound with impurities diffused therein and a portion of said substrate adjacent to said strained-layer superlattice have smaller refractive indices than a light emitting region including said first conducting type impurity diffusion region and said second conductivity type region.

Claim 11

A compound semiconductor light emitting device according to claim 1, wherein said second conducting type region adjacent to said first conducting type impurity diffusion region a second conductivity type impurity diffusion region.

Claim 12

A compound semiconductor light emitting device according to claim 10, wherein said second conductivity type region is adjacent to said first conductivity type impurity diffusion region through an undoped region of said first compound semiconductor layers.

Claim 13

A compound semiconductor light emitting device according to claim 1, wherein said second conductivity type region, which is formed to be adjacent to the first conductivity type impurity diffusion region, is a single-layer second conductivity type semiconductor layer comprised of a semiconductor material selected from the group consisting of a second conductivity type unipolar II-VI compound semiconductor and a second conductivity type III-V compound semiconductor with impurities diffused therein and provided in contact with an end side surface of said strained-layer superlattice furthest from said first end side surface.

Claim 14

A compound semiconductor light emitting device according to claim 1, where said II-VI compound semiconductor epitaxial layer is comprised of at least one element of the II group selected from the group consisting of zinc and cadmium, and a chalcogen, which is an element of the VI group.

Claim 15

A compound semiconductor light emitting device according to claim 1, wherein a surface of said substrate adjacent to said strained-layer superlattice is comprised of a buffer layer.

Claim 16

A compound semiconductor light emitting device according to claim 1, wherein said second conductivity type region is so formed as to be adjacent to said first conductivity type impurity diffusion region through an undoped region of said first compound semiconductor layers.

Claim 17

A compound semiconductor light emitting device comprising at least: strained-layer superlattices formed on a substrate, the strained-layer superlattices each being comprised of a plurality of first compound semiconductor layers and a plurality of second compound semiconductor layers, the strained-layer superlattices each being formed by alternately laminating one of the plurality of first compound semiconductor layers with one of the plurality of second compound semiconductor layers each of the plurality of first compound semiconductor layers being comprised of a II-VI compound semiconductor epitaxial layer, and each of the plurality of second compound semiconductor layers being comprised of a compound semiconductor epitaxial layer selected from the group consisting of II-V compound semiconductor epitaxial layers and III-V compound semiconductor epitaxial layers and having a different composition from that of said plurality of first compound semiconductor layers, the plurality of second compound semiconductor layers each having a smaller lattice constant than that of the plurality of first compound semiconductor layers, a degree of lattice mismatch between each of the plurality of first compound semiconductor layers and adjacent ones of the plurality of second compound semiconductor layers being not more than 20%; a first conductivity type impurity diffusion region formed in at least each of said first compound semiconductor layers, extending into the strained-layer superlattice from a first end side surface of the first conductivity type impurity diffusion region, the first conductivity type impurity diffusion region including impurities of the first conductivity type; a second conductivity type region having an opposite conductivity type to said first conductivity type and so formed as to be adjacent to said first conductivity type impurity diffusion region, said second conductivity type region having a second end side surface furthest from the first conductivity type impurity diffusion region; and electrodes provided on the first and second end side surfaces, respectively, of said first conductivity type impurity diffusion region and said second conductivity type region; wherein said impurities in said first conductivity type impurity diffusion region consist of an element having a larger covalent radius and an element having a smaller covalent radius than that of one of the Group II element and the Group VI element which constitutes said plurality of first compound semiconductor layers.

Claim 18

A compound semiconductor light emitting device comprising at least: strained-layer superlattices formed on a substrate, the strained-layer superlattices each being comprised of a plurality of first compound semiconductor layers and a plurality of second compound semiconductor layers, the strained-layer superlattices each being formed by alternately laminating one of the plurality of first compound semiconductor layers with one of the plurality of second compound semiconductor layers each of the plurality of first compound semiconductor layers being comprised of a II-VI compound semiconductor epitaxial layer, and each of the plurality of second compound semiconductor layers being comprised of a compound semiconductor epitaxial layer selected from the group consisting of II-V compound semiconductor epitaxial layers and III-V compound semiconductor epitaxial layers and having a different composition from that of said plurality of first compound semiconductor layers, the plurality of second compound semiconductor layers each having a smaller lattice constant than that of the plurality of first compound semiconductor layers, a degree of lattice mismatch between each of the plurality of first compound semiconductor layers and adjacent ones of the plurality of second compound semiconductor layers being not more than 20%; a first conductivity type impurity diffusion region formed in at least each of said first compound semiconductor layers, extending into the strained-layer superlattice from a first end side surface of the first conductivity type impurity diffusion region, the first conductivity type impurity diffusion region including impurities of the first conductivity type; a second conductivity type region having an opposite conductivity type to said first conductivity type and so formed as to be adjacent to said first conductivity type impurity diffusion region, said second conductivity type region having a second end side surface furthest from the first conductivity type impurity diffusion region; and electrodes provided on the first and second end side surfaces, respectively, of said first conductivity type impurity diffusion region and said second conductivity type region; wherein said impurities in said first conductivity type impurity diffusion region consist of an element having a larger covalent radius and an element having a smaller covalent radius than that of one of the Group II element and the Group VI element which constitutes said plurality of first compound semiconductor layers.

Claim 19

A compound semiconductor light emitting device comprising at least: strained-layer superlattices formed on a substrate, the strained-layer superlattices each being comprised of a plurality of first compound semiconductor layers and a plurality of second compound semiconductor layers, the strained-layer superlattices each being formed by alternately laminating one of the plurality of first compound semiconductor layers with one of the plurality of second compound semiconductor layers, each of the plurality of first compound semiconductor layers being composed of a II-VI compound semiconductor epitaxial layer, and each of the plurality of second compound semiconductor layers being comprised of a compound semiconductor epitaxial layer selected from the group consisting of II-VI compound semiconductor epitaxial layers and III-V compound semiconductor epitaxial layers and having a different composition from that of said plurality of first compound semiconductor layers, the plurality of second compound semiconductor layers each having a smaller lattice constant than that of the plurality of first compound semiconductor layers, a degree of lattice mismatch between each of the plurality of first compound semiconductor layers and adjacent ones of the plurality of second compound semiconductor layers being not more than 20%; a first conductivity type impurity diffusion region formed in at least each of said first compound semiconductor layers, extending into the strained-layer superlattice from a first end side surface of the first conductivity type impurity diffusion region, said first conductivity type impurity diffusion region having impurities of the first conductivity type therein, with said impurities in said first conductivity type impurity diffusion region consisting of an element having a larger covalent radius and an element having a smaller covalent radius than that of one of the Group II element and the Group VI element which constitutes said plurality of first compound semiconductor layers; a second conductivity type region having an opposite conductivity type to said first conductivity type and so formed as to be adjacent to said first conductivity type impurity diffusion region, said second conductivity type region having a second end side surface furthest from the first conductivity type impurity diffusion region; and electrodes provided on the first and second end side surfaces respectively of said first conductivity type impurity diffusion region and said second conductivity type region; wherein said second conductivity type region adjacent to said first conductivity type impurity diffusion region is a second conductivity type impurity diffusion region.

Claim 20

A compound semiconductor light emitting device comprising at least: strained-layer superlattices formed on a substrate, the strained-layer superlattices each being comprised of a plurality of first compound semiconductor layers and a plurality of second compound semiconductor layers, the strained-layer superlattices each being formed by alternately laminating one of the plurality of first compound semiconductor layers with one of the plurality of second compound semiconductor layers, each of the plurality of first compound semiconductor layers being composed of a II-VI compound semiconductor epitaxial layer, and each of the plurality of second compound semiconductor layers being comprised of a compound semiconductor epitaxial layer selected from the group consisting of II-VI compound semiconductor epitaxial layers and III-V compound semiconductor epitaxial layers and having a different composition from that of said plurality of first compound semiconductor layers, the plurality of second compound semiconductor layers each having a smaller lattice constant than that of the plurality of first compound semiconductor layers, a degree of lattice mismatch between each of the plurality of first compound semiconductor layers and adjacent ones of the plurality of second compound semiconductor layers being not more than 20%; a first conductivity type impurity diffusion region formed in at least each of said first compound semiconductor layers, extending into the strained-layer superlattice from a first end side surface of the first conductivity type impurity diffusion region, said first conductivity type impurity diffusion region having impurities of the first conductivity type therein, with said impurities in said first conductivity type impurity diffusion region consisting of an element having a larger covalent radius and an element having a smaller covalent radius than that of one of the Group II element and the Group VI element which constitutes said plurality of first compound semiconductor layers; a second conductivity type region having an opposite conductivity type to said first conductivity type and so formed as to be adjacent to said first conductivity type impurity diffusion region, said second conductivity type region having a second end side surface furthest from the first conductivity type impurity diffusion region; and electrodes provided on the first and second end side surfaces respectively of said first conductivity type impurity diffusion region and said second conductivity type region; wherein said second conductivity type region adjacent to said first conductivity type impurity diffusion region is a second conductivity type impurity diffusion region.