Crystal growth method of iii-v compound semiconductor

Abstract

Abstract PURPOSE:To obtain a III-V compound semiconductor doped in a high concentration by simultaneously doping impurities which have a greater atomic radius and a smaller atomic radius than that of a group V element when the impurity which is made a doner is doped by substituting the group V element. CONSTITUTION:A semiconductor compound is formed by introducing a raw gas and a doping gas from a gas supply inlet 1 to a reaction tube 2 and by decomposing on a substrate 3 provided on a pedestal 4 made of carbon and heated by a high frequency coil 5. By using this equipment, Se and Te are doped in GaAs by using trimethyl gallium and arsine (AsH3) the raw gas and selenium hydride and diethyl tellurium the doping gas. In this case, the Se (atomic radius 1.14 Angstrom ) or Te (atomic radius 1.32 Angstrom ) which substitutes the group V element As (atomic radius 1.18 Angstrom ) has the smaller or the greater atomic radius than that of the As respectively. It is similar against the other III-V compounds.

Inventors

• 👤 Naoki Furuhata
• 👤 直規 古畑
• 👤 Masaji Yoshida
• 👤 吉田　政次

Bibliographic Details