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Method of making a schottky electrode

Assignee: Mitsubishi Electric Corp
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Filing: 1989-10-25
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Granted: 1991-09-03
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Expires: 2009-10-25
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Abstract

Abstract A semiconductor device includes a semiconductor body and a metal contact forming a Schottky barrier with said body, the metal contact including a layer of nickel disposed on the semiconductor body, an aluminum layer disposed on the nickel layer, and a nickel aluminum alloy disposed at the interface of the layers. The alloy is formed by heating the metal layers.

Inventors

  • 👤 Kazuo Hayashi
  • 👤 Takuji Sonoda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 18:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/871; H10D64/00; H10D64/60; H10D64/64; Y; Y10; Y10S; Y10S148/00; Y10S148/088; Y10S148/139; Y10S148/14

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 69 words
A method of producing a Schottky barrier in a semiconductor device comprising: depositing a nickel layer having a thickness less than 100 Angstroms on a surface of a semiconductor substrate; depositing an aluminum layer on said nickel layer opposite the substrate; and heating the nickel and aluminum layers to a temperature between 250° and 350° C. for about ten minutes to form a nickel aluminum alloy at said surface.
Claim 2
Independent Claim 69 words
A method of producing a Schottky barrier in a semiconductor device comprising: depositing a nickel layer having a thickness less than 100 Angstroms on a surface of a semiconductor substrate; depositing an aluminum layer on said nickel layer opposite the substrate; and heating the nickel and aluminum layers to a temperature between 250° and 350° C. for about ten minutes to form a nickel aluminum alloy at said surface.
Claim 3
Dependent Claim 17 words
The method of claim 1 including depositing said nickel layer to a thickness greater than 10 Å.

References Cited (Backward Citations)

US3231421A Cited
US3935586A Cited
US4154874A Cited
US4310568A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-09-02 1995-03-04 1995-09-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-09-02 1999-03-04 1999-09-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-09-02 2003-03-04 2003-09-03 $7700.00 Window Closed / Lapsed

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