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US5045496A
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Semi-insulating cobalt doped indium phosphide grown by MOCVD
Assignee: Conexant Systems LLC
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Filing: 1988-05-13
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Granted: 1991-09-03
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Expires: 2008-05-13
Abstract
Abstract A process is described for growing at least one layer doped with a transition element of cobalt on a substrate by introducing a source of indium, such as tri ethyl indium, (C2H5)3In or, a source of a group V element, a source of the transition element, such as cobalt nitrosyl tricarbonyl CO(NO)(CO)3, and a source of phosphorus, to the substrate heated in an inert or reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.
Inventors
- 👤 Kenneth L. Hess
- 👤 Stanley W. Zehr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:27
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C30B29/00; C30B29/10; C30B29/40; H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3446; H01S5/20; H01S5/22; H01S5/223; H01S5/2237; H01S5/227; H01S5/2275; H01S5/24; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S148/04; Y10S148/11; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
72 words
A process for growing a cobalt doped semi-insulating layer on a substrate, comprising the steps of: introducing a source of a group III element, a source of a group V element, and cobalt nitrosyl tricarbonyl as a source of cobalt into an inert or reducing atmosphere at a total pressure between about 1/100 atmosphere and one atmosphere; and heating the substrate in said atmosphere to grow the semi-insulating layer on the substrate.
Claim 2
Dependent Claim
72 words
A process for growing a cobalt doped semi-insulating layer on a substrate, comprising the steps of: introducing a source of a group III element, a source of a group V element, and cobalt nitrosyl tricarbonyl as a source of cobalt into an inert or reducing atmosphere at a total pressure between about 1/100 atmosphere and one atmosphere; and heating the substrate in said atmosphere to grow the semi-insulating layer on the substrate.
Claim 3
Dependent Claim
22 words
The process of claim 1, wherein the step of introducing a source of a group III element comprises introducing a metal alkyl.
Claim 4
Dependent Claim
17 words
The process of claim 2, wherein the step of introducing a metal alkyl comprises introducing triethyl indium.
Claim 5
Dependent Claim
29 words
The process of claim 1, wherein the step of introducing a source of a group V element comprises introducing a hydride or an alkyl of said group V element.
Claim 6
Dependent Claim
23 words
The process of claim 4, wherein the step of introducing a hydride or an alkyl of said group V element comprises introducing phosphine.
Claim 7
Dependent Claim
32 words
The process of claim 1, wherein the step of introducing elements comprises introducing triethyl indium, phosphine, and cobalt nitrosyl tricarbonyl into said atmosphere to grow a cobalt doped indium phosphide semi-insulating layer.
Claim 8
Dependent Claim
67 words
The process for growing at least one layer doped with a transition element of cobalt on a substrate, comprising the steps of: introducing tri ethyl indium (C 2 H 5 )3 In or TEI, and cobalt nitrosyl carbonyl to said substrate heated in a reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.
Claim 9
Dependent Claim
67 words
The process for growing at least one layer doped with a transition element of cobalt on a substrate, comprising the steps of: introducing tri ethyl indium (C 2 H 5 )3 In or TEI, and cobalt nitrosyl carbonyl to said substrate heated in a reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.
Claim 10
Dependent Claim
65 words
A process for growing a cobalt doped indium phosphide semi-insulating layer on a substrate, comprising the steps of: introducing a source of indium, a source of phosphorus, and cobalt nitrosyl tricarbonyl as a source of cobalt into a vapor deposition chamber at a pressure not greater than about one atmosphere; and heating the substrate in said chamber to grow the semi-insulating layer on the substrate.
Claim 11
Dependent Claim
65 words
A process for growing a cobalt doped indium phosphide semi-insulating layer on a substrate, comprising the steps of: introducing a source of indium, a source of phosphorus, and cobalt nitrosyl tricarbonyl as a source of cobalt into a vapor deposition chamber at a pressure not greater than about one atmosphere; and heating the substrate in said chamber to grow the semi-insulating layer on the substrate.
Claim 12
Dependent Claim
18 words
The process of claim 8, wherein the step of introducing a source of indium comprises introducing triethyl indium.
Claim 13
Dependent Claim
17 words
The process of claim 9, wherein the step of introducing a source of phosphorus comprises introducing phosphine.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 1998-09-02 | 1999-03-04 | 1999-09-03 | $3760.00 | Window Closed / Lapsed |
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