Patent US5044000A successfully refreshed from Google Patents.
US5044000A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Driving method of solid-state imaging device for improving smear phenomenon
Assignee: NEC Electronics Corp
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Filing: 1989-07-27
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Granted: 1991-08-27
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Expires: 2009-07-27
Abstract
Abstract An imaging area has a substrate with a mosaic of photo diodes arranged in rows and columns on a solid state substrate. Vertical shift registers are positioned between the columns to transfer photo charges out of the photo diodes and to associated electronic circuits. Depletion layers are interposed in said substrate to separate it into areas. Pulses are applied to the depletion layers driving the transfer periods in order to prevent charge overflow, and therefore a smearing of the image.
Inventors
- 👤 Takashi Iijima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:37
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/60; H04N25/62; H04N25/625; H04N25/70; H04N25/71; H04N25/715
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
175 words
A method of driving a solid-state imaging device formed in a semiconductor substrate and having an imaging area with a plurality of lines of photo-sensitive elements, a charge storage areas for temporarily storing charges accumulated in and transferred from said imaging area, means for transferring said charges accumulated in said imaging area to said charge storage area, said transferring means operating as a first vertical CCD shift register for transferring said charges and said charge storage area operating as a second vertical CCD shift register for transferring charges therein, a horizontal CCD shift register coupled to receive charges in parallel from said charge storage area and to output said charges in serial, and a vertical overflow drain structure having a depletion layer associated therewith, the method comprising the steps of applying a pulse into said semiconductor substrate in order to widen said depletion layer in said semiconductor substrate, said pulse being impressed on said substrate exclusively during a time period when said charges are being transferred from said transferring means to said charge storage area.
Claim 2
Independent Claim
175 words
A method of driving a solid-state imaging device formed in a semiconductor substrate and having an imaging area with a plurality of lines of photo-sensitive elements, a charge storage areas for temporarily storing charges accumulated in and transferred from said imaging area, means for transferring said charges accumulated in said imaging area to said charge storage area, said transferring means operating as a first vertical CCD shift register for transferring said charges and said charge storage area operating as a second vertical CCD shift register for transferring charges therein, a horizontal CCD shift register coupled to receive charges in parallel from said charge storage area and to output said charges in serial, and a vertical overflow drain structure having a depletion layer associated therewith, the method comprising the steps of applying a pulse into said semiconductor substrate in order to widen said depletion layer in said semiconductor substrate, said pulse being impressed on said substrate exclusively during a time period when said charges are being transferred from said transferring means to said charge storage area.
Claim 3
Dependent Claim
67 words
The method of driving a solid-state imaging device as claimed in claim 1, wherein said photo-sensitive elements are photodiodes, said transferring means includes a plurality of CCD shift registers disposed adjacent to and along each of said lines of photodiodes and said charge storage area includes a plurality of CCD shift registers each being positioned to receive charges from corresponding CCD shift register of said transferring means.
Claim 4
Independent Claim
193 words
A method of driving a solid-state imaging device formed in a semiconductor substrate and having an imaging area with a plurality of lines of photo-sensitive elements, a charge storage area for temporarily storing charges accumulated in and transferred from said imaging area, means for transferring said charges accumulated in said imaging area to said charge storage area, said transferring means operating as a first vertical CCD shift register for transferring said charges and said charge storage area operating as a second vertical CCD shift register for transferring charges therein, a horizontal CCD shift register coupled to receive charges in parallel from said charge storage area and to output said charges in serial, and a vertical overflow drain structure having a depletion layer associated therewith, the method comprising the steps of applying a pulse into said semiconductor substrate in order to widen said depletion layer in said semiconductor substrate, said pulse being impressed on said substrate at a time period when said charges are being transferred from said imaging area to said transferring means and at a time period when said charges are being transferred from said transferring means to said charge storage area.
Claim 5
Independent Claim
193 words
A method of driving a solid-state imaging device formed in a semiconductor substrate and having an imaging area with a plurality of lines of photo-sensitive elements, a charge storage area for temporarily storing charges accumulated in and transferred from said imaging area, means for transferring said charges accumulated in said imaging area to said charge storage area, said transferring means operating as a first vertical CCD shift register for transferring said charges and said charge storage area operating as a second vertical CCD shift register for transferring charges therein, a horizontal CCD shift register coupled to receive charges in parallel from said charge storage area and to output said charges in serial, and a vertical overflow drain structure having a depletion layer associated therewith, the method comprising the steps of applying a pulse into said semiconductor substrate in order to widen said depletion layer in said semiconductor substrate, said pulse being impressed on said substrate at a time period when said charges are being transferred from said imaging area to said transferring means and at a time period when said charges are being transferred from said transferring means to said charge storage area.
Claim 6
Dependent Claim
68 words
The method of driving a solid state imaging device as claimed in claim 3, wherein said photo-sensitive elements are photodiodes, said transferring means includes a plurality of CCD shift registers disposed adjacent to and along each of said lines of photodiodes, and said charge storage area includes a plurality of CCD shift registers each being positioned to receive charges from corresponding CCD shift registers of said transferring means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-26 | 1995-02-25 | 1995-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-26 | 1999-02-25 | 1999-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-26 | 2003-02-25 | 2003-08-27 | $7700.00 | Window Closed / Lapsed |