US5041420A
Expired / Lapsed
US
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Method for making superconductor films from organometallic precursors
Assignee: HP Inc
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Filing: 1987-06-26
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Granted: 1991-08-20
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Expires: 2007-06-26
Abstract
Abstract A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precursor elements on a substrate; 2) patterning the metal film; and 3) oxidizing the metal film to form a superconductor film. Because the process separates the metal precursor film formation, patterning, and oxidation steps, each of the steps can be individually optimized.
Inventors
- 👤 V. K. Nagesh
- 👤 John T. Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:48
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0548; H10N60/0324; H10N60/0661; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/734; Y10S505/736; Y10S505/742
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
92 words
A method for forming a ceramic superconductor film comprising: preparing a plurality of organometallic precursor compounds including the metallic elements of a ceramic superconductor material in their proper stoichiometric proportions; depositing said precursor compounds on a ceramic superconductor compatible surface; heating said deposited precursor compounds to eliminate the organic constituents of said organometallic precursor compounds such that a metal precursor film is formed on said surface; patterning said metal precursor film; and heating said patterned metal precursor film in an oxidizing atmosphere to form a patterned ceramic superconductor film on said surface.
Claim 2
Independent Claim
92 words
A method for forming a ceramic superconductor film comprising: preparing a plurality of organometallic precursor compounds including the metallic elements of a ceramic superconductor material in their proper stoichiometric proportions; depositing said precursor compounds on a ceramic superconductor compatible surface; heating said deposited precursor compounds to eliminate the organic constituents of said organometallic precursor compounds such that a metal precursor film is formed on said surface; patterning said metal precursor film; and heating said patterned metal precursor film in an oxidizing atmosphere to form a patterned ceramic superconductor film on said surface.
Claim 3
Dependent Claim
35 words
A method for forming a ceramic superconductor film as recited in claim 1 wherein said step of preparing a plurality of organometallic precursor compounds includes the mixing of liquid solutions of said organometallic precursor compounds.
Claim 4
Dependent Claim
33 words
A method for forming a ceramic superconductor film as recited in claim 2 wherein said solutions of organometallic precursor compounds are selected from the group of resinates, mercaptides, and salts of decanoic acid.
Claim 5
Dependent Claim
23 words
A method for forming a ceramic superconductor film as recited in claim 3 wherein said organometallic precursor compounds include a copper organometallic compound.
Claim 6
Dependent Claim
31 words
A method for forming a ceramic superconductor film as recited in claim 4 wherein said organometallic precursor compounds further include a yttrium organometallic precursor compound and a barium organometallic precursor compound.
Claim 7
Dependent Claim
24 words
A method for forming a ceramic superconductor film as recited in claim 1 wherein said organometallic precursor compounds are heated in a reducing atmosphere.
Claim 8
Independent Claim
91 words
A method for forming a ceramic superconductor film on a surface comprising the steps of: applying organometallic precursor compounds to a ceramic superconductor compatible surface, said organometallic precursor compounds including the unoxidized metallic elements of a ceramic superconductor material in their proper stoichiometric proportions; converting said organometallic precursor compounds to a substantially unoxidized metal precursor film substantially comprising said unoxidized metallic elements by eliminating the non-metallic constituents of said organometallic precursor compounds; and heating said metal precursor film in an oxidizing atmosphere to form a ceramic superconductor film on said surface.
Claim 9
Independent Claim
91 words
A method for forming a ceramic superconductor film on a surface comprising the steps of: applying organometallic precursor compounds to a ceramic superconductor compatible surface, said organometallic precursor compounds including the unoxidized metallic elements of a ceramic superconductor material in their proper stoichiometric proportions; converting said organometallic precursor compounds to a substantially unoxidized metal precursor film substantially comprising said unoxidized metallic elements by eliminating the non-metallic constituents of said organometallic precursor compounds; and heating said metal precursor film in an oxidizing atmosphere to form a ceramic superconductor film on said surface.
Claim 10
Dependent Claim
28 words
A method for forming a ceramic superconductor film as recited in claim 7 further comprising the step of patterning said metal precursor film prior to said heating step.
Claim 11
Dependent Claim
31 words
A method for forming a ceramic superconductor film as recited in claim 7 wherein said organometallic precursor compounds are selected from the group of resinates, mercaptides, and salts of decanoic acid.
Claim 12
Dependent Claim
23 words
A method for forming a ceramic superconductor film as recited in claim 7 wherein said organometallic precursor compounds include a copper organometallic compound.
Claim 13
Independent Claim
94 words
A method for forming a ceramic superconductor film on a surface comprising the steps of: applying organometallic precursor compounds as a liquid mixture to a ceramic superconductor compatible surface, said organometallic precursor compounds including the unoxidized metallic elements of a ceramic superconductor material in their proper stoichiometric proportions; converting said organometallic precursor compounds to a substantially unoxidized metal precursor film substantially comprising said unoxidized metallic elements by eliminating non-metallic constituents of said organometallic precursor compounds; and heating said metal precursor film in an oxidizing atmosphere to form a ceramic superconductor film on said surface.
Claim 14
Independent Claim
94 words
A method for forming a ceramic superconductor film on a surface comprising the steps of: applying organometallic precursor compounds as a liquid mixture to a ceramic superconductor compatible surface, said organometallic precursor compounds including the unoxidized metallic elements of a ceramic superconductor material in their proper stoichiometric proportions; converting said organometallic precursor compounds to a substantially unoxidized metal precursor film substantially comprising said unoxidized metallic elements by eliminating non-metallic constituents of said organometallic precursor compounds; and heating said metal precursor film in an oxidizing atmosphere to form a ceramic superconductor film on said surface.
Claim 15
Dependent Claim
28 words
A method for forming a ceramic superconductor film as recited in claim 11 further comprising the step of patterning said metal precursor film prior to said heating step.
Claim 16
Dependent Claim
31 words
A method for forming a ceramic superconductor film as recited in claim 11 wherein said organometallic precursor compounds are selected from the group of resinates, mercaptides, and salts of decanoic acid.
Claim 17
Dependent Claim
22 words
A method for forming a ceramic superconductor film as recited in claim 11 wherein said organometallic precursor include a copper organometallic compound.
Claim 18
Dependent Claim
62 words
A method for forming a ceramic superconductor film as recited in claim 1 wherein said patterning step includes: forming a resist layer over said metal precursor film; exposing portions of said resist layer to an energy source; developing said resist layer to form a patterned resist layer; etching said precursor film through said patterned resist layer; and removing said patterned resist layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |