US5041397A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 1989-02-03
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Granted: 1991-08-20
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Expires: 2009-02-03
Abstract
Abstract A method of forming a PSG layer on a semiconductor substrate containing semiconductor elements by chemical vapor deposition is characterized in that the concentration of the PSG layer is gradually increased from the substrate surface toward the uppermost surface of the PSG layer.
Inventors
- 👤 Nam-Yoon Kim
- 👤 Si-Choon Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/042; Y10S148/161
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
58 words
A method of fabricating a semiconductor device, comprising: forming a PSG layer on a semiconductor substrate containing semiconductor elements, by chemical vapor deposition, while varying the concentration of phosphorous in the PSG layer to gradually increase from the substrate surface toward the uppermost surface of the PSG layer; and redistributing the concentration of phosphorous in the PSG layer.
Claim 2
Independent Claim
58 words
A method of fabricating a semiconductor device, comprising: forming a PSG layer on a semiconductor substrate containing semiconductor elements, by chemical vapor deposition, while varying the concentration of phosphorous in the PSG layer to gradually increase from the substrate surface toward the uppermost surface of the PSG layer; and redistributing the concentration of phosphorous in the PSG layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |