US3969743A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Protective coating for IV-VI compound semiconductor devices
Assignee: Lanteris Space LLC
•
Filing: 1975-04-23
•
Granted: 1976-07-13
•
Expires: 1995-04-23
Abstract
Abstract Devices fabricated from certain compound semiconductors of the group IV-VI series are provided with optically transparent coatings of barium fluoride, calcium fluoride, or strontium fluoride. These coating materials are insulators, chemically and electrically inert to the semiconductors, easily applied, and mechanically compatible thus making excellent protective coatings. In addition the coatings can act as diffusion masks in device fabrication thus enhancing planar device processing.
Inventors
- 👤 Daniel A. Gorski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:45
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/127; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F77/30; H10F77/306; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/072; Y10S148/125; Y10S148/15
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
102 words
A semiconductor device for use in a low temperature, moistureless ambient comprising: a single crystal barium fluoride substrate, a semiconductor deposited on said substrate, said semiconductor being selected from the group consisting of lead telluride, lead selenide, alloys of lead telluride and lead selenide, lead sulfide, alloys of lead sulfide and lead selenide, tin substituted lead telluride, tin substituted lead selenide, germanium substituted lead telluride, and cadmium substituted lead suffide, means for making electrical contact to selected areas of said semiconductor, and a protective coating covering said semiconductor, said coating being selected from the group consisting of barium fluoride and strontium fluoride.
Claim 2
Dependent Claim
102 words
A semiconductor device for use in a low temperature, moistureless ambient comprising: a single crystal barium fluoride substrate, a semiconductor deposited on said substrate, said semiconductor being selected from the group consisting of lead telluride, lead selenide, alloys of lead telluride and lead selenide, lead sulfide, alloys of lead sulfide and lead selenide, tin substituted lead telluride, tin substituted lead selenide, germanium substituted lead telluride, and cadmium substituted lead suffide, means for making electrical contact to selected areas of said semiconductor, and a protective coating covering said semiconductor, said coating being selected from the group consisting of barium fluoride and strontium fluoride.
Claim 3
Dependent Claim
19 words
The device of claim 1 wherein said coating is in the form of a thin film of fine polycrystals.
Claim 4
Dependent Claim
23 words
The device of claim 2 wherein said semiconductor is in thin film form, said film being epitaxially deposited on said single crystal substrate.
Claim 5
Dependent Claim
19 words
The device of claim 3 wherein said single crystal substrate is composed of the same material as said coating.
Claim 6
Dependent Claim
11 words
The device of claim 4 wherein said semiconductor is lead telluride.
Claim 7
Dependent Claim
89 words
A semiconductor device for use in a low temperature, moistureless ambient comprising: a semiconductor selected from the group consisting of lead telluride, lead selenide, alloys of lead telluride and lead selenide, lead sulfide, alloys of lead sulfide and lead selenide, tin substituted lead telluride, tin substituted lead selenide, germanium substituted lead telluride, and cadmium substituted lead sulfide, means for making electrical contact to selected areas of said semiconductor, and a protective coating covering said semiconductor, said coating being selected from the group consisting of barium fluoride and strontium fluoride.
Claim 8
Dependent Claim
89 words
A semiconductor device for use in a low temperature, moistureless ambient comprising: a semiconductor selected from the group consisting of lead telluride, lead selenide, alloys of lead telluride and lead selenide, lead sulfide, alloys of lead sulfide and lead selenide, tin substituted lead telluride, tin substituted lead selenide, germanium substituted lead telluride, and cadmium substituted lead sulfide, means for making electrical contact to selected areas of said semiconductor, and a protective coating covering said semiconductor, said coating being selected from the group consisting of barium fluoride and strontium fluoride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-13 | 1980-01-12 | 1980-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-13 | 1984-01-12 | 1984-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-13 | 1988-01-12 | 1988-07-13 | $7700.00 | Window Closed / Lapsed |