US3796930A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film high voltage switch
Assignee: Magnascreen Corp
•
Filing: 1968-07-15
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Granted: 1974-03-12
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Expires: 1988-07-15
Abstract
Abstract This disclosure is concerned with a charge controlled high voltage switch. The switch is a gateless field effect transistor which can be switched with a positive, negative or alternating voltage. ''''Gateless'''' as used in this disclosure to describe a device, means a device which does not have a separate and distinct gate electrode.
Inventors
- 👤 D Page
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:13
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10W; H10W40/00; H10W40/10
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
146 words
A thin film field effect transistor having similar first and third quadrant I-V characteristics consisting of: 1. a flexible electrically conductive metal supporting substrate, 2. a first layer of an electrically insulating, thermal conducting material disposed on at least the top surface of the metal substrate, 3. a first electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate, 4. a second electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate and spaced apart from said first electrode, 5. a layer of a semiconductor material disposed on said first layer of electrically insulating material between and in physical and electrical contact with said first and second electrodes, and 6. a layer of an electrically insulating material disposed over the layer of semiconductor material.
Claim 2
Dependent Claim
146 words
A thin film field effect transistor having similar first and third quadrant I-V characteristics consisting of: 1. a flexible electrically conductive metal supporting substrate, 2. a first layer of an electrically insulating, thermal conducting material disposed on at least the top surface of the metal substrate, 3. a first electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate, 4. a second electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate and spaced apart from said first electrode, 5. a layer of a semiconductor material disposed on said first layer of electrically insulating material between and in physical and electrical contact with said first and second electrodes, and 6. a layer of an electrically insulating material disposed over the layer of semiconductor material.
Claim 3
Dependent Claim
21 words
a first layer of an electrically insulating, thermal conducting material disposed on at least the top surface of the metal substrate,
Claim 4
Dependent Claim
21 words
a first layer of an electrically insulating, thermal conducting material disposed on at least the top surface of the metal substrate,
Claim 5
Dependent Claim
38 words
The device of claim 1 in which the substrate is a material selected from the group consisting of nickel, aluminum, copper, tin, molybdenum, tungsten, tantalum, beryllium, silver, gold, platinum, magnesium, base alloys thereof, ferrous base alloys and silicon.
Claim 6
Dependent Claim
29 words
the first layer of an electrically insulating, thermal conducting material consists of a material selected from the group consisting of; metal oxides, glass, cured resins and cured filled resins;
Claim 7
Dependent Claim
29 words
the first layer of an electrically insulating, thermal conducting material consists of a material selected from the group consisting of; metal oxides, glass, cured resins and cured filled resins;
Claim 8
Dependent Claim
25 words
the first and second electrodes consists of a metal selected from the group consisting of gold, nickel, silver, indium, aluminum and base alloys thereof; and
Claim 9
Dependent Claim
25 words
the first and second electrodes consists of a metal selected from the group consisting of gold, nickel, silver, indium, aluminum and base alloys thereof; and
Claim 10
Dependent Claim
31 words
The device of claim 1 in which the first and second electrode consists of a metal selected from the group consisting of gold, nickel, silver, indium, aluminum and base alloys thereof.
Claim 11
Dependent Claim
23 words
a first electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate,
Claim 12
Dependent Claim
23 words
a first electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate,
Claim 13
Dependent Claim
30 words
a second electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate and spaced apart from said first electrode,
Claim 14
Dependent Claim
30 words
a second electrode disposed on said first layer of electrically insulating, thermal conducting material disposed on the top surface of said metal substrate and spaced apart from said first electrode,
Claim 15
Dependent Claim
36 words
The device of claim 1 in which the layer of semiconductor material consists of a material selected from the group consisting of tellurium, cadmium sulfide, cadmium selenide, indium arsenide, gallium arsenide, tin oxide, and lead telluride.
Claim 16
Dependent Claim
26 words
the layer of semiconductor material consists of a material selected from the group consisting of tellurium, cadmium sulfide, cadmium selenide, indium arsenide, gallium arsenide, tin oxide.
Claim 17
Dependent Claim
26 words
the layer of semiconductor material consists of a material selected from the group consisting of tellurium, cadmium sulfide, cadmium selenide, indium arsenide, gallium arsenide, tin oxide.
Claim 18
Dependent Claim
7 words
The device of claim 1 in which:
Claim 19
Dependent Claim
29 words
a layer of a semiconductor material disposed on said first layer of electrically insulating material between and in physical and electrical contact with said first and second electrodes, and
Claim 20
Dependent Claim
29 words
a layer of a semiconductor material disposed on said first layer of electrically insulating material between and in physical and electrical contact with said first and second electrodes, and
Claim 21
Dependent Claim
14 words
a layer of an electrically insulating material disposed over the layer of semiconductor material.
Claim 22
Dependent Claim
14 words
a layer of an electrically insulating material disposed over the layer of semiconductor material.
Claim 23
Dependent Claim
24 words
The device of claim 1 in which the substrate is aluminum, the first insulating layer is aluminum oxide, and the semiconductor material is tellurium.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-11 | 1977-09-10 | 1978-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-11 | 1981-09-10 | 1982-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-11 | 1985-09-10 | 1986-03-12 | $7700.00 | Window Closed / Lapsed |