US5040033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical amplifier-photodetector assemblage
Assignee: Nokia Bell Labs
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Filing: 1989-06-26
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Granted: 1991-08-13
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Expires: 2009-06-26
Abstract
Abstract Briefly, in the invention a photodetector and an optical amplifier are integrated in the same semiconductor chip. The optical amplifier and the photodetector are positioned side-by-side on the same chip. A portion of the electromagnetic energy carried in the evanescent tail of the optical mode is detected by the photodetector for monitoring the average output power of the optical amplifier. Current confinement and lateral index guiding can be provided by Fe or Ti doped semi-insulating layers of InP. The side-by-side arrangement enables the detector to monitor the output power of the optical amplifier without degrading the output power of the optical amplifier.
Inventors
- 👤 Niloy K. Dutta
- 👤 Thirumala R. Halemane
- 👤 Steven K. Korotky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; H01S5/50
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
141 words
An integrated optical semiconductor device comprising an optical amplifier integrated with a photodetector on a wafer comprising a substrate, a buffer layer of n-InP on said substrate, an active layer of undoped InGaAsP on said buffer layer, a cladding layer of p-InP on said active layer and a contact layer of p-InGaAsP on said cladding layer, said wafer having a first etched channel and a second etched channel, said first and second channels being positioned side by side, a doped semi-insulating layer in said first channel and in said second channel, said optical amplifier being in said first channel in said wafer, and said photodetector being in said second channel in said wafer, the side by side spacing of said photodetector and said optical amplifier being such that said photodetector receives a portion of spontaneous emission generated by said optical amplifier.
Claim 2
Dependent Claim
141 words
An integrated optical semiconductor device comprising an optical amplifier integrated with a photodetector on a wafer comprising a substrate, a buffer layer of n-InP on said substrate, an active layer of undoped InGaAsP on said buffer layer, a cladding layer of p-InP on said active layer and a contact layer of p-InGaAsP on said cladding layer, said wafer having a first etched channel and a second etched channel, said first and second channels being positioned side by side, a doped semi-insulating layer in said first channel and in said second channel, said optical amplifier being in said first channel in said wafer, and said photodetector being in said second channel in said wafer, the side by side spacing of said photodetector and said optical amplifier being such that said photodetector receives a portion of spontaneous emission generated by said optical amplifier.
Claim 3
Dependent Claim
32 words
The device of claim 1 wherein said doped semi-insulating layer in said first channel and said second channel each comprises InP doped with a material selected from the group consisting of Fe.
Claim 4
Dependent Claim
32 words
The device of claim 1 wherein said doped semi-insulating layer in said first channel and said second channel each comprises InP doped with a material selected from the group consisting of Ti.
Claim 5
Dependent Claim
17 words
The device of claim 1 wherein the first and second channels are substantially parallel to 110 direction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-12 | 1995-02-11 | 1995-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-12 | 1999-02-11 | 1999-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-12 | 2003-02-11 | 2003-08-13 | $7700.00 | Window Closed / Lapsed |