Semiconductor light emitting element

Abstract

Abstract PURPOSE:To produce a monitor integration type light emitting element by a method wherein a diffraction grating is provided on the active layer side of a distribution feedback type buried semiconductor laser while a monitoring photo detector is arranged beside the diffraction grating. CONSTITUTION:An N type buffer layer 202, an In0.61Ga0.39As0.85P0.15 active layer 203 with no additive, a P-In0.72Ga0.28As0.61P0.39 layer 204 are laminated on the surface (100) of an N-InP substrate 201 making the mesa strips 205, 206 in parallel with each other in the direction of (011). The grooves 207, 208 are 20mum wide and 3mum deep while the strips 205, 206 are respectively 2mum wide and 6mum wide. Next the diffraction gratings 218 are provided at nlambda/2 pitch of the active layer oscillating wave length lambda then P and N type InP layers 209, 210 are buried in piles on the surface excluding the upper surface of the mesa strips 205, 206 and overall surface is covered with a P-InP layer 211 to be further laminated with a P-In0.72Ga0.28As0.61P0.39 layer 212. After insulating 214 the central part between the strips 205 and 206 by means of proton irradiation, the ohmic electrodes 215, 216 separated by an SiO2 film 213 are provided on the layer 212 while another ohmic electrode 217 is provided on the backside of the substrate 201. The output light of LED may be effectively monitored by the scattered light from the diffraction gratings producing effective light emitting elements.

Inventors

• 👤 Mitsuhiro Kitamura
• 👤 北村　光弘

Bibliographic Details