US5034784A
Expired / Lapsed
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Diamond electric device on silicon
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-06-08
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Granted: 1991-07-23
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Expires: 2010-06-08
Abstract
Abstract A diamond electric device is described. The device comprises a diamond film deposited on a semiconductor substrate and an upper electrode. The electrical contact between the diamond film and the electrode is formed only through an intervening silicon semiconductor film which prevents direct contact between the diamond film and the electrode. By this structure, the stability of electric performance is substantially improved.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10D62/83; H10D62/8303; H10H20/01; H10H20/011; H10H20/014; H10H20/0145; H10H20/8262; H10W; H10W72/00; H10W72/90; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
37 words
A diamond electric device comprising: a semiconductor substrate; a diamond film formed on said substrate; a semiconductor film formed on said diamond film and an electrode arrangement formed on and making electric contact with said semiconductor film.
Claim 2
Dependent Claim
37 words
A diamond electric device comprising: a semiconductor substrate; a diamond film formed on said substrate; a semiconductor film formed on said diamond film and an electrode arrangement formed on and making electric contact with said semiconductor film.
Claim 3
Dependent Claim
23 words
The device of claim 1 wherein an alloyed region is formed between said diamond film by a reaction therebetween and said semiconductor film.
Claim 4
Dependent Claim
14 words
The device of claim 1 wherein said electrode arrangment is formed of a metal.
Claim 5
Dependent Claim
10 words
The device of claim 3 wherein said metal is aluminum.
Claim 6
Dependent Claim
19 words
The device of claim 2 wherein said diamond film is partially doped with impurity to form an impurity region.
Claim 7
Dependent Claim
20 words
The device of claim 5 wherein said impurity is selected from Group IIb and Group VIb of the Periodic Table.
Claim 8
Dependent Claim
19 words
The device of claim 5 wherein said alloyed region and said impurity region are located adjacent to each other.
Claim 9
Dependent Claim
25 words
The device of claim 5 wherein said alloyed region and said impurity region are formed into a plurality of areas respectively which are arranged alternatively.
Claim 10
Dependent Claim
11 words
The device of claim 1 wherein said semiconductor film comprises silicon.
Claim 11
Dependent Claim
21 words
The device of claim 1 wherein the conductivity types of said substrate and said semiconductor film are opposite to each other.
Claim 12
Dependent Claim
12 words
The device of claim 1 wherein said semiconductor film comprises silicon-carbon alloy.
Claim 13
Dependent Claim
12 words
The device of claim 11 wherein said silicon-carbon alloy is silicon carbide.
Claim 14
Dependent Claim
52 words
An electric device comprising: a semiconductor substrate; a film comprising diamond crystals, said film being provided on said substrate; semiconductor protrusions which are provided on and protrude from the surface of said film; and impurity regions formed in said film, wherein said impurity regions are located between and below said semiconductor protrusions.
Claim 15
Dependent Claim
52 words
An electric device comprising: a semiconductor substrate; a film comprising diamond crystals, said film being provided on said substrate; semiconductor protrusions which are provided on and protrude from the surface of said film; and impurity regions formed in said film, wherein said impurity regions are located between and below said semiconductor protrusions.
Claim 16
Dependent Claim
22 words
The electric device of claim 13 wherein alloyed regions are formed between said film and said semiconductor protrusions by a reaction therebetween.
Claim 17
Dependent Claim
16 words
The electric device of claim 13 wherein electrodes are provided on some of said semiconductor protrusions.
Claim 18
Dependent Claim
88 words
An electric device comprising: a semiconductor substrate; a film comprising diamond crystals, said film being provided on said substrate; semiconductor protrusions which are provided on and protrude from the surface of said film; alloyed regions formed between said film and said semiconductor protrusions by a reaction therebetween; impurity regions formed in said film and between said alloyed regions; and electrodes provided on some of said semiconductor protrusions, wherein current paths are formed from said substrate to said electrodes through said film, said impurity regions, and said alloyed regions.
Claim 19
Dependent Claim
88 words
An electric device comprising: a semiconductor substrate; a film comprising diamond crystals, said film being provided on said substrate; semiconductor protrusions which are provided on and protrude from the surface of said film; alloyed regions formed between said film and said semiconductor protrusions by a reaction therebetween; impurity regions formed in said film and between said alloyed regions; and electrodes provided on some of said semiconductor protrusions, wherein current paths are formed from said substrate to said electrodes through said film, said impurity regions, and said alloyed regions.
Claim 20
Dependent Claim
46 words
An electric device comprising: a silicon semiconductor substrate; a silicon-carbon alloy provided on said silicon substrate; a film comprising diamond crystals, said film being provided on said silicon-carbon alloy; a silicon semiconductor provided on said film; and at least one electrode provided on said silicon semiconductor.
Claim 21
Dependent Claim
46 words
An electric device comprising: a silicon semiconductor substrate; a silicon-carbon alloy provided on said silicon substrate; a film comprising diamond crystals, said film being provided on said silicon-carbon alloy; a silicon semiconductor provided on said film; and at least one electrode provided on said silicon semiconductor.
Claim 22
Dependent Claim
19 words
The electric device of claim 17 further comprising a silicon-carbon alloy region between said film and said silicon semiconductor.
Claim 23
Dependent Claim
13 words
The electric device claim 18 wherein said silicon-carbon alloy region comprises silicon carbide.
Claim 24
Dependent Claim
13 words
The electric device of claim 17 wherein said silicon-carbon alloy comprises silicon carbide.
Claim 25
Dependent Claim
47 words
An electric device comprising: a silicon semiconductor substrate; a silicon-carbon alloy provided on said silicon substrate; a film comprising diamond crystals, said film being provided on said silicon-carbon alloy; a silicon semiconductor provided on said film; and at least one electrode provided on said silicon carbide semiconductor.
Claim 26
Dependent Claim
47 words
An electric device comprising: a silicon semiconductor substrate; a silicon-carbon alloy provided on said silicon substrate; a film comprising diamond crystals, said film being provided on said silicon-carbon alloy; a silicon semiconductor provided on said film; and at least one electrode provided on said silicon carbide semiconductor.
Claim 27
Dependent Claim
43 words
An electric device comprising: a film comprising diamond crystals, said film being provided on a semiconductor substrate; and a silicon semiconductor provided on said film, wherein a silicon-carbon alloy is formed at an interface between said film and said silicon semiconductor by alloying.
Claim 28
Dependent Claim
43 words
An electric device comprising: a film comprising diamond crystals, said film being provided on a semiconductor substrate; and a silicon semiconductor provided on said film, wherein a silicon-carbon alloy is formed at an interface between said film and said silicon semiconductor by alloying.
Claim 29
Dependent Claim
13 words
The electric device of claim 22 wherein said silicon-carbon alloy comprises silicon carbide.
Claim 30
Dependent Claim
37 words
An electric device comprising: a film comprising diamond crystals, said film being provided on a silicon semiconductor substrate, wherein a silicon-carbon alloy is formed at an interface between said film and said silicon semiconductor substrate by alloying.
Claim 31
Dependent Claim
37 words
An electric device comprising: a film comprising diamond crystals, said film being provided on a silicon semiconductor substrate, wherein a silicon-carbon alloy is formed at an interface between said film and said silicon semiconductor substrate by alloying.
Claim 32
Dependent Claim
13 words
The electric device of claim 24 wherein said silicon-carbon alloy comprises silicon carbide.
References Cited (Backward Citations)
US4478654A
Cited
US4531142A
Cited
JPS60192326A
Cited
US4920387A
Cited
JPS63145788A
Cited
US4918497A
Cited
US4981818A
Cited
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