US4920387A
Expired / Lapsed
US
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Light emitting device
Assignee: Canon Inc
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Filing: 1989-09-13
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Granted: 1990-04-24
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Expires: 2009-09-13
Abstract
Abstract A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 1016 cm-3.eV-1 or less.
Inventors
- 👤 Katsuji Takasu
- 👤 Masafumi Sano
- 👤 Hisanori Tsuda
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/817; H10H20/818; B; B82; B82Y; B82Y20/00; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H10H20/01; H10H20/011; H10H20/014; H10H20/0145; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
72 words
A light emitting device comprising: a luminescent portion having at least two laminated layers comprising non-single crystalline silicon containing hydrogen atoms and having a homo-junction; and at least a pair of electrodes connected electrically to said luminescent portion, and wherein each non-single crystalline silicon layer has an optical band gap of at least 2.0 eV and a localized level density at mid-gap no greater than 10 16 cm -3 .eV -1 .
Claim 2
Dependent Claim
72 words
A light emitting device comprising: a luminescent portion having at least two laminated layers comprising non-single crystalline silicon containing hydrogen atoms and having a homo-junction; and at least a pair of electrodes connected electrically to said luminescent portion, and wherein each non-single crystalline silicon layer has an optical band gap of at least 2.0 eV and a localized level density at mid-gap no greater than 10 16 cm -3 .eV -1 .
Claim 3
Dependent Claim
25 words
A light emitting device according to claim 1, wherein said at least two laminated layers comprise a P-type conductive layer and an N-type conductive layer.
Claim 4
Dependent Claim
33 words
A light emitting device according to claim 1, wherein said at least two laminated layers comprise a P-type conductive layer; a layer containing no P-type or N-type impurities; and an N-type conductive layer.
Claim 5
Dependent Claim
29 words
A light emitting device according to claim 1, wherein said at least two laminated layers comprise: a P-type conductive layer; an I-type conductive layer; and an N-type conductive layer.
Claim 6
Dependent Claim
22 words
A light emitting device according to claim 1, wherein the quantum efficiency of the luminescent layer is at least 10 -4 %.
Claim 7
Dependent Claim
83 words
A light emitting device comprising: a luminescent layer comprising non-single crystalline silicon containing hydrogen atoms; a pair of electrically insulating layers having said luminescent layer sandwiched therebetween; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layers and having said luminescent layer and insulating layers sandwiched therebetween, said luminescent layer having an optical band gap of at least 2.0 eV and a localized level density at mid-gap no greater than 10 16 cm -3 .eV -1 .
Claim 8
Dependent Claim
83 words
A light emitting device comprising: a luminescent layer comprising non-single crystalline silicon containing hydrogen atoms; a pair of electrically insulating layers having said luminescent layer sandwiched therebetween; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layers and having said luminescent layer and insulating layers sandwiched therebetween, said luminescent layer having an optical band gap of at least 2.0 eV and a localized level density at mid-gap no greater than 10 16 cm -3 .eV -1 .
Claim 9
Dependent Claim
94 words
A light emitting device comprising: a luminescent portion comprising: a P-type conductive layer; a semiconductive intermediate layer; and an N-type conductive layer; and at least a pair of electrodes electrically connected to said luminescent portion, wherein at least one of said layers has a multi-layer structure includes a plurality of first layer regions comprising non-single crystalline silicon containing hydrogen atoms and a plurality of second layer regions having a different optical band gap from said plurality of first layer regions, and wherein said first and second layer regions are laminated alternatively as one unit.
Claim 10
Dependent Claim
94 words
A light emitting device comprising: a luminescent portion comprising: a P-type conductive layer; a semiconductive intermediate layer; and an N-type conductive layer; and at least a pair of electrodes electrically connected to said luminescent portion, wherein at least one of said layers has a multi-layer structure includes a plurality of first layer regions comprising non-single crystalline silicon containing hydrogen atoms and a plurality of second layer regions having a different optical band gap from said plurality of first layer regions, and wherein said first and second layer regions are laminated alternatively as one unit.
Claim 11
Dependent Claim
17 words
A light emitting device according to claim 7, wherein said first layer region has I-type conductive characteristics.
Claim 12
Dependent Claim
20 words
A light emitting device according to claim 7, wherein P-type and N-type impurities are absent from said first layer region.
Claim 13
Dependent Claim
26 words
A light emitting device according to claim 7, wherein said second layer region has an optical band gap greater than that of the first layer region.
Claim 14
Dependent Claim
22 words
A light emitting device according to claim 7, wherein the quantum efficiency of the luminescent layer is at least 10 -4 %.
Claim 15
Dependent Claim
105 words
A light emitting device comprising: a pair of electrically insulating layers; a luminescent layer sandwiched between said pair of electrically insulating layers; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layers and having said luminescent layer and said insulating layers sandwiched therebetween, wherein said luminescent layer has a multi-layer structure including a plurality of first layer regions comprising non-single crystalline silicon containing hydrogen atoms and a plurality of second layer regions having a different optical band gap from said plurality of first layer regions, and wherein said first and second layer regions are laminated alternatively as one unit.
Claim 16
Dependent Claim
105 words
A light emitting device comprising: a pair of electrically insulating layers; a luminescent layer sandwiched between said pair of electrically insulating layers; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layers and having said luminescent layer and said insulating layers sandwiched therebetween, wherein said luminescent layer has a multi-layer structure including a plurality of first layer regions comprising non-single crystalline silicon containing hydrogen atoms and a plurality of second layer regions having a different optical band gap from said plurality of first layer regions, and wherein said first and second layer regions are laminated alternatively as one unit.
Claim 17
Dependent Claim
23 words
A light emitting device according to claim 12, wherein the optical band gap of said first layer region is at least 2.0 eV.
Claim 18
Dependent Claim
31 words
A light device according to claim 12, wherein the localized level density at mid gap of said first layer region is no more than 10 16 cm -3 .eV -1 .
Claim 19
Dependent Claim
81 words
A light emitting device comprising: a luminescent portion comprising a plurality of layer structures each comprising a plurality of layers laminated in the following order: an N-type conductive layer; a first semiconductive intermediate layer; a P-type conductive layer; and a second semiconductive intermediate layer; and at least a pair of electrodes connected electrically to said luminescent portion, wherein said luminescent portion is composed of non-single crystalline silicon containing hydrogen atoms and having an optical band gap of at least 2.0 eV.
Claim 20
Dependent Claim
81 words
A light emitting device comprising: a luminescent portion comprising a plurality of layer structures each comprising a plurality of layers laminated in the following order: an N-type conductive layer; a first semiconductive intermediate layer; a P-type conductive layer; and a second semiconductive intermediate layer; and at least a pair of electrodes connected electrically to said luminescent portion, wherein said luminescent portion is composed of non-single crystalline silicon containing hydrogen atoms and having an optical band gap of at least 2.0 eV.
Claim 21
Dependent Claim
24 words
A light emitting device according to claim 15, wherein said first semiconductive intermediate layer and said second semiconductive intermediate layer have I-type conductive characteristics.
Claim 22
Dependent Claim
27 words
A light emitting device according to claim 15, wherein P-type and N-type impurities are absent from said first semiconductive intermediate layer and said second semiconductive intermediate layer.
Claim 23
Dependent Claim
19 words
A light emitting device according to claim 15, wherein said luminescent portion comprises a plurality of said layer structures.
Claim 24
Dependent Claim
22 words
A light emitting device according to claim 15, wherein the quantum efficiency of the luminescent layer is at least 10 -4 %.
Claim 25
Dependent Claim
22 words
A light emitting device according to claim 15, wherein one of said first and second semiconductive intermediate layers has I-type conductive characteristics.
Claim 26
Dependent Claim
24 words
A light emitting device according to claim 15, wherein P-type and N-type impurities are absent from one of said first and second intermediate layers.
Claim 27
Dependent Claim
81 words
A light emitting device comprising: a luminescent layer comprising non-single crystalline silicon containing hydrogen atoms; an electrically insulating layer superposed on said luminescent layer; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layer and having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layer having an optical band gap of at least 2.0 eV and a localized level density at mid-gap no greater than 10 16 cm -3 .eV -1 .
Claim 28
Dependent Claim
81 words
A light emitting device comprising: a luminescent layer comprising non-single crystalline silicon containing hydrogen atoms; an electrically insulating layer superposed on said luminescent layer; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layer and having said luminescent layer and said insulating layer sandwiched therebetween, said luminescent layer having an optical band gap of at least 2.0 eV and a localized level density at mid-gap no greater than 10 16 cm -3 .eV -1 .
Claim 29
Dependent Claim
99 words
A light emitting device comprising: a luminescent layer; an electrically insulating layer superposed on said luminescent layer; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layer and having said luminescent layer and said insulating layer sandwiched therebetween, wherein said luminescent layer includes a multi-layer structure having a plurality of first layer regions comprising non-single crystalline silicon containing hydrogen atoms and a plurality of second layer regions having a different optical band gap from said plurality of first layer regions, wherein said first and second layer regions are laminated alternatively as one unit.
Claim 30
Dependent Claim
99 words
A light emitting device comprising: a luminescent layer; an electrically insulating layer superposed on said luminescent layer; and at least a pair of electrodes electrically connected to said luminescent layer and insulating layer and having said luminescent layer and said insulating layer sandwiched therebetween, wherein said luminescent layer includes a multi-layer structure having a plurality of first layer regions comprising non-single crystalline silicon containing hydrogen atoms and a plurality of second layer regions having a different optical band gap from said plurality of first layer regions, wherein said first and second layer regions are laminated alternatively as one unit.
Claim 31
Dependent Claim
23 words
A light emitting device according to claim 23, wherein the optical band gap of said first layer regions is at least 2.0 eV.
Claim 32
Dependent Claim
31 words
A light emitting device according to claim 23, wherein the localized level density at mid gap of said first layer region is at least 10 16 cm -3 .eV -1 .
References Cited (Backward Citations)
US4069492A
Cited
US4527179A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-23 | 2001-10-23 | 2002-04-24 | $7700.00 | Window Closed / Lapsed |