Patent US5034344A successfully refreshed from Google Patents.
US5034344A
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US
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Method of making a surface emitting semiconductor laser
Assignee: Nokia Bell Labs
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Filing: 1990-06-18
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Granted: 1991-07-23
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Expires: 2010-06-18
Abstract
Abstract A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.
Inventors
- 👤 Jack L. Jewell
- 👤 Axel Scherer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:38
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18344; H01S5/18347; H01S5/18305; H01S5/18358; H01S5/18361; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
117 words
A method of fabricating a vertically oriented semiconducting optical structure, comprising the steps of: epitaxially forming on a crystalline body a vertical structure comprising a plurality of semiconductive layers of differing compositions, said vertical structure including an active region having an effective bandgap, a first interference mirror and another mirror substantially reflecting light of a wavelength corresponding to said bandgap, an optical distance between said interference mirror and said another mirror being in a predetermined relationship with said wavelength; and vertically etching with an ion beam comprising ions heavier than argon through a portion of said vertical structure including at least said active region to form an isolated pillar of at least some of said semiconductive layers.
Claim 2
Independent Claim
117 words
A method of fabricating a vertically oriented semiconducting optical structure, comprising the steps of: epitaxially forming on a crystalline body a vertical structure comprising a plurality of semiconductive layers of differing compositions, said vertical structure including an active region having an effective bandgap, a first interference mirror and another mirror substantially reflecting light of a wavelength corresponding to said bandgap, an optical distance between said interference mirror and said another mirror being in a predetermined relationship with said wavelength; and vertically etching with an ion beam comprising ions heavier than argon through a portion of said vertical structure including at least said active region to form an isolated pillar of at least some of said semiconductive layers.
Claim 3
Dependent Claim
13 words
A method as recited in claim 1, wherein said ions comprise xenon ions.
Claim 4
Dependent Claim
26 words
A method as recited in claim 2, wherein said etching step further comprises exposing said vertical structure to a reactive gas during said ion beam etching.
Claim 5
Dependent Claim
35 words
A method as recited in claim 3, further comprising attaching a first electrical connection to a portion of said vertical structure above both of said mirrors and a second electrical connection to said crystalline body.
Claim 6
Dependent Claim
16 words
A method as recited in claim 3, wherein said another mirror comprises a second interference mirror.
Claim 7
Dependent Claim
16 words
A method as recited in claim 4, wherein said another mirror comprises a second interference mirror.
Claim 8
Dependent Claim
30 words
A method as recited in claim 6, wherein said first electrical connection comprises a metallic layer deposited on an epitaxially formed one of said layers prior to said etching step.
Claim 9
Dependent Claim
18 words
A method as recited in claim 7, wherein said active region comprises at least one quantum well layer.
Claim 10
Dependent Claim
21 words
A method as recited in claim 8, wherein said at least one quantum well layer consists of three quantum well layers.
Claim 11
Dependent Claim
19 words
A method as recited in claim 5, wherein said etching step etches through substantially all of said two mirrors.
Claim 12
Dependent Claim
57 words
A method as recited in claim 6, wherein said depositing step includes doping said first interference mirror to a first semiconductivity type of a concentration substantially higher than a doping concentration of said active region and doping said second interference mirror to a second semiconductivity type of a concentration substantially higher than said active region doping concentration.
Claim 13
Dependent Claim
46 words
A method as recited in claim 11, further comprises depositing less than a monolayer of a dopant of said second conductivity type on an uppermost surface of said second interference mirror and wherein said first electrical connection comprises a metallic layer deposited on said uppermost surface.
Claim 14
Independent Claim
178 words
A method of fabricating a vertical semiconductor diode laser, comprising the steps of: forming on a body a vertical structure comprising a plurality of layers, at least some of which comprise semiconductor layers epitaxial with said substrate, said structure including a lower mirror, a lower spacer, an active semiconductor layer emitting light at a wavelength, an upper spacer and an upper mirror, an optical distance between said lower and upper mirrors being in a predetermined relationship to said wavelength, said upper and lower mirrors reflecting a substantial fraction of light at said wavelength; vertically etching a portion of said structure to form a pillar rising away from said substrate; and a first step of electrically connecting a first electrical contact to a portion of said pillar above said active layer; and a second step of electrically connecting a second electrical contact to a portion of said vertical structure below said active layer; wherein said vertical etching step causes electrical current between said two contacts to be confined to an area of said active layer corresponding to said pillar.
Claim 15
Independent Claim
178 words
A method of fabricating a vertical semiconductor diode laser, comprising the steps of: forming on a body a vertical structure comprising a plurality of layers, at least some of which comprise semiconductor layers epitaxial with said substrate, said structure including a lower mirror, a lower spacer, an active semiconductor layer emitting light at a wavelength, an upper spacer and an upper mirror, an optical distance between said lower and upper mirrors being in a predetermined relationship to said wavelength, said upper and lower mirrors reflecting a substantial fraction of light at said wavelength; vertically etching a portion of said structure to form a pillar rising away from said substrate; and a first step of electrically connecting a first electrical contact to a portion of said pillar above said active layer; and a second step of electrically connecting a second electrical contact to a portion of said vertical structure below said active layer; wherein said vertical etching step causes electrical current between said two contacts to be confined to an area of said active layer corresponding to said pillar.
Claim 16
Dependent Claim
19 words
A method as recited in claim 13, wherein said vertically etching step etches at least through said active layer.
Claim 17
Dependent Claim
22 words
A method as recited in claim 13, wherein said vertically etching step comprises etching with a beam of ions heavier than argon.
Claim 18
Dependent Claim
27 words
A method as recited in claim 15, wherein said vertically etching step further comprises exposing said structure to a reactive gas during said etching with a beam.
Claim 19
Dependent Claim
23 words
A method as recited in claim 13, wherein said forming step forms at least one of said mirrors as a multi-layer interference mirror.
Claim 20
Dependent Claim
39 words
A method as recited in claim 17, wherein said multi-layer interference mirror is a semiconductor interference mirror and one of said first and second contacts is operatively attached to said semiconductor interference mirror to form a current path therethrough.
Claim 21
Dependent Claim
16 words
A method as recited in claim 18, wherein said semiconductor interference mirror is said upper mirror.
Claim 22
Dependent Claim
46 words
A method as recited in claim 13, wherein said vertically etching step forms a plurality of said pillars and wherein said first connecting step connects a plurality of said first electrical contacts to respective ones of said pillars, whereby a plurality of laser diodes are formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-22 | 1995-01-21 | 1995-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-22 | 1999-01-21 | 1999-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-22 | 2003-01-21 | 2003-07-23 | $7700.00 | Window Closed / Lapsed |