Current sensing circuit for use with a current controlling device in a power delivery circuit

Claim 2

An improved current sensing circuit for use in combination with a current controlling device in a power delivery circuit for supplying load current to a load, the current controlling device being multi-cellular, with a major current-carrying cellular portion and a minor current-carrying cellular portion, a first main current terminal, a gate terminal for receiving a control signal, a second main current terminal connecting the major current-carrying cellular portion, a first auxiliary terminal connected at one end to the minor current-carrying cellular portion so as to provide a current generally proportional to the current of the major current-carrying cellular portion, and a second auxiliary terminal connected at one end to the major current-carrying cellular portion, the improvement in the current sensing circuit comprising: said current sensing circuit including first and second branches each for connection at one end to a respective one of said first and said second auxiliary terminals and having means for connection in common at the other end to a reference potential in the power delivery circuit; said first branch including first and third series-connected semiconductor devices; said second branch including second and fourth series-connected semiconductor devices; said first and said fourth semiconductor devices operating in a transimpedance mode and each being controlled by bias signals; said second and said third semiconductor devices being cross-connected with said first and said fourth semiconductor devices respectively to provide the respective said bias signals thereto; and impedance means connected to said first branch for providing a voltage at a node at one end of said impedance means approximately proportional to the current of the major current-carrying cellular portion, said node being connectable to a detection; circuit.

Claim 3

The current sensing circuit of claim 1 wherein said first, second, third and fourth semiconductor devices comprise first, second, third and fourth transistors respectively, said first and said second transistors being one of two conductivity types and said third and said fourth transistors being the other of the two conductivity types.

Claim 4

The current sensing circuit of claim 2 wherein said first, second, third and fourth transistors are each bipolar transistors.

Claim 5

The current sensing circuit of claim 3 wherein the first main current terminal of the current controlling device is adapted to be connected to one polarity of a source of power having relatively opposite polarities, the second main current terminal of the current controlling device is adapted to be connected to one side of the load, the other side of the load being adapted to be connected to the other polarity of the source of power, and wherein both said first and said second transistors are PNP transistors and both said third and said fourth transistors are NPN transistors.

Claim 6

The current sensing circuit of claim 4 wherein said reference potential in the power delivery circuit, to which said first and second branches of said sensing circuit has said means for connection in common, is said other polarity of the source of power.

Claim 7

The current sensing circuit of claim 2 wherein the betas (β) of said first and said second transistors are substantially identical and the betas (β) of said third and said fourth transistors are substantially identical.

Claim 8

The current sensing circuit of claim 3 wherein said second and said third transistors are each connected in respective shorted base-to-collector configurations and wherein the base of said second transistor is connected to the base of said first transistor and the base of said third transistor is connected to the base of said fourth transistor.

Claim 9

The current sensing circuit of claim 7 wherein said impedance means is a first resistor connected in series circuit in said first branch.

Claim 10

The current sensing circuit of claim 8 wherein said second branch includes a respective second resistor in series circuit therewith.

Claim 11

The current sensing circuit of claim 7 wherein said impedance means comprises a resistor in series circuit in said first branch, said resistor further being connected in series circuit in said second branch whereby said resistor is connected in common in said first and said second branches.

Claim 12

The current sensing circuit of claim 4 wherein said one polarity of a source of power is relatively more positive than said other polarity of the source of power such that said current controlling device is connected in the relatively more positive, or high, side of a power delivery circuit relative to the load.

Claim 13

The current sensing circuit of claim 4 further including fifth and sixth bipolar transistors, said fifth transistor being of the same conductivity type as said first and second transistors and said sixth transistor being of the same conductivity type as said third and fourth transistors, the emitter-base junction of said fifth transistor being connected between the base and collector of said second transistor, the emitter-base junction of said sixth transistor being connected between the base and collector of said third transistor, the collector of said fifth transistor being adapted to be connected to the reference potential and the collector of said sixth transistor being adapted to be connected to said first auxiliary terminal of said current controlling device, whereby to reduce sensitivity to the betas (β) of the first, second, third and fourth transistors.

Claim 14

The current sensing circuit of claim 4 further including fifth and sixth bipolar transistors, said second and said third transistors each connected in respective shorted base-to-collector configurations, the fifth transistor having its emitter and collector connected in serial circuit in the second branch between said second and said fourth transistors, the sixth transistor having its emitter and collector connected in serial circuit in the first branch between said first and said third transistors, the bases of said fifth and said sixth transistors being connected to the collectors of said sixth and said fifth transistors respectively, whereby voltage drops between the emitters and collectors of the respective said fifth and sixth transistors serve to limit the voltage drops between the emitters and collectors of the respective said first and fourth transistors to thereby reduce variations in the betas (β) of the first, second, third, and fourth transistors for variations in the voltage across the power delivery circuit.

Claim 15

The current sensing circuit of claim 1 wherein said impedance means is connected in series circuit to said first branch.

Claim 16

In an H-bridge power delivery circuit for a load, the H-bridge circuit including two upper arms adapted to be connected to a positive supply potential and two lower arms adapted to be connected to a reference potential, a respective current sensing MOSFET in each upper arm of said H-bridge and a respective switch in each lower arm of said H-bridge, each said current sensing MOSFET comprising a multi-cellular device with a first main current terminal, a gate terminal for receiving a control signal, a second main current terminal connecting a majority of device cells, a first auxiliary terminal connected at one end to a minority of device cells so as to provide a current generally proportional to the current of the majority of device cells, and a second auxiliary terminal connected at one end to the majority of device cells, and an improved current sensing circuit connected to said first and said second auxiliary terminals of each of said current sensing MOSFETs and to said reference potential for providing an output signal voltage approximately proportional to the current of the majority of device cells, the current sensing circuit comprising first and second branches, the first branch including, in serial circuit, first and third bipolar transistors and a sense resistor, the first transistor being connected to the first auxiliary terminal of the respective current sensing MOSFET and one end of the resistor being connected to the reference potential and the other end being connected to the third transistor at a node, the second branch including, in serial circuit, second and fourth bipolar transistors, the second transistor being connected to the second auxiliary terminal of the respective current sensing MOSFET and the fourth transistor being connected to the sense resistor at said node, said first and said fourth transistors each being controlled by respective bias signals provided by cross-connection with said second and said third transistors respectively, and wherein said output signal voltage comprises the voltage appearing at said node.

Claim 17

In an H-bridge power delivery circuit for a load, the H-bridge circuit including two upper arms adapted to be connected to a positive supply potential and two lower arms adapted to be connected to a reference potential, a respective current sensing MOSFET in each upper arm of said H-bridge and a respective switch in each lower arm of said H-bridge, each said current sensing MOSFET comprising a multi-cellular device with a first main current terminal, a gate terminal for receiving a control signal, a second main current terminal connecting a majority of device cells, a first auxiliary terminal connected at one end to a minority of device cells so as to provide a current generally proportional to the current of the majority of device cells, and a second auxiliary terminal connected at one end to the majority of device cells, and an improved current sensing circuit connected to said first and said second auxiliary terminals of each of said current sensing MOSFETs and to said reference potential for providing an output signal voltage approximately proportional to the current of the majority of device cells, the current sensing circuit comprising first and second branches, the first branch including, in serial circuit, first and third bipolar transistors and a sense resistor, the first transistor being connected to the first auxiliary terminal of the respective current sensing MOSFET and one end of the resistor being connected to the reference potential and the other end being connected to the third transistor at a node, the second branch including, in serial circuit, second and fourth bipolar transistors, the second transistor being connected to the second auxiliary terminal of the respective current sensing MOSFET and the fourth transistor being connected to the sense resistor at said node, said first and said fourth transistors each being controlled by respective bias signals provided by cross-connection with said second and said third transistors respectively, and wherein said output signal voltage comprises the voltage appearing at said node.

Claim 18

A current sensing circuit in combination with a current controlling device in a power delivery circuit for supplying load current to a load, the current controlling device being multi-cellular, with a major current-carrying cellular portion and a minor current-carrying cellular portion, a first main current terminal, a gate terminal for receiving a control signal, a second main current terminal connecting the major current-carrying cellular portion, a first auxiliary terminal connected at one end to the minor current-carrying cellular portion so as to provide a current generally proportional to the current of the major current-carrying cellular portion, and a second auxiliary terminal connected at one end to the major current-carrying cellular portion, and the current sensing circuit comprising: said current sensing circuit including first and second branches each for connection at one end to a respective one of said first and said second auxiliary terminals and having means for connection in common at the other end to a reference potential in the power delivery circuit; said first branch including first and third series-connected semiconductor devices; said second branch including second and fourth series-connected semiconductor devices; said first and second semiconductor devices being interconnected in a first current mirror configuration; said third and fourth semiconductor devices being interconnected in a second current mirror configuration; and impedance means connected to said first branch for providing a voltage at a node at one end of said impedance means approximately proportional to the load current, said node being connectable to a detection circuit.

Claim 19

A current sensing circuit in combination with a current controlling device in a power delivery circuit for supplying load current to a load, the current controlling device being multi-cellular, with a major current-carrying cellular portion and a minor current-carrying cellular portion, a first main current terminal, a gate terminal for receiving a control signal, a second main current terminal connecting the major current-carrying cellular portion, a first auxiliary terminal connected at one end to the minor current-carrying cellular portion so as to provide a current generally proportional to the current of the major current-carrying cellular portion, and a second auxiliary terminal connected at one end to the major current-carrying cellular portion, and the current sensing circuit comprising: said current sensing circuit including first and second branches each for connection at one end to a respective one of said first and said second auxiliary terminals and having means for connection in common at the other end to a reference potential in the power delivery circuit; said first branch including first and third series-connected semiconductor devices; said second branch including second and fourth series-connected semiconductor devices; said first and second semiconductor devices being interconnected in a first current mirror configuration; said third and fourth semiconductor devices being interconnected in a second current mirror configuration; and impedance means connected to said first branch for providing a voltage at a node at one end of said impedance means approximately proportional to the load current, said node being connectable to a detection circuit.

Claim 20

The current sensing circuit of claim 16 wherein said first, second, third and fourth semiconductor devices comprise first, second, third and fourth transistors respectively, said first and said second transistors being one of two conductivity types and said third and said fourth transistors being the other of the two conductivity types.

Claim 21

The current sensing circuit of claim 17 wherein said first, second, third and fourth transistors are each bipolar transistors.

Claim 22

The current sensing circuit of claim 18 wherein the first main current terminal of the current controlling device is adapted to be connected to one polarity of a source of power having relatively opposite polarities, the second main current terminal of the current controlling device is adapted to be connected to one side of the load, the other side of the load being adapted to be connected to the other polarity of the source of power, and wherein both said first and said second transistors are PNP transistors and both said third and said fourth transistors are NPN transistors.

Claim 23

The current sensing circuit of claim 19 wherein said reference potential in the power delivery circuit, to which said first and second branches of said sensing circuit has said means for connection in common, is said other polarity of the source of power.

Claim 24

The current sensing circuit of claim 17 wherein the betas (β) of said first and said second transistors are substantially identical and the betas (β) of said third and said fourth transistors are substantially identical.

Claim 25

The current sensing circuit of claim 18 wherein said second transistor has a base electrode shorted to a collector electrode and said third transistor has a base electrode shorted to a collector electrode and wherein the base of said second transistor is connected to the base of said first transistor and the base of said third transistor is connected to the base of said fourth transistor.

Claim 26

The current sensing circuit of claim 22 wherein said impedance means is a first resistor connected in series in said first branch.

Claim 27

The current sensing circuit of claim 23 wherein said second branch includes a respective second resistor in series circuit therewith.

Claim 28

The current sensing circuit of claim 22 wherein said impedance means comprises a resistor in said first branch, said resistor further being connected in series circuit in said second branch whereby said resistor is connected in common in said first and said second branches.

Claim 29

The current sensing circuit of claim 19 wherein said one polarity of a source of power is relatively more positive than said other polarity of the source of power such that said current controlling device is connected in the relatively more positive, or high, side of a power delivery circuit relative to the load.

Claim 30

The current sensing circuit of claim 19 further including fifth and sixth bipolar transistors, said second and said third transistors each connected in respective shorted base-to-collector configurations, the fifth transistor having its emitter and collector connected in serial circuit in the second branch between said second and said fourth transistors, the sixth transistors having its emitter and collector connected in serial circuit in the first branch between said first and said third transistors, the bases of said fifth and said sixth transistors being connected to the collectors of said sixth and said fifth transistors respectively, whereby voltage drops between the emitters and collectors of the respective said fifth and sixth transistors serve to limit the voltage drops between the emitters and collectors of the respective said first and fourth transistors to thereby reduce variations in the betas (β) of the first, second, third, and fourth transistors for variations in the voltage across the power delivery circuit.

Claim 31

The current sensing circuit of claim 16 wherein said impedance means is connected in series circuit to said first branch.